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Laminated metallic film capacitor and preparing method thereof

A technology of metallized thin film and metal thin film, applied in the direction of thin film/thick film capacitors, laminated capacitors, fixed capacitor electrodes, etc., can solve the problems of low mechanical strength, low dielectric constant, poor film formation, etc., and achieve low production cost , low resistivity and long service life

Inactive Publication Date: 2012-03-28
GUIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current capacitors have problems such as low dielectric constant of the medium, poor heat resistance, poor film formation, and low mechanical strength.

Method used

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  • Laminated metallic film capacitor and preparing method thereof
  • Laminated metallic film capacitor and preparing method thereof
  • Laminated metallic film capacitor and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1 of the present invention: The structure of the laminated metalized film capacitor is as Figure 14 As shown, an insulating substrate 1 made of alumina is included, and a metal thin film electrode made of tantalum is provided on the insulating substrate 1 2 and metal thin film electrodes made of tantalum 3. In the metal film electrode 2 with metal film electrode 3 is provided with a dielectric film 4 which completely separates them. The dielectric film 4 is made of tantalum pentoxide. The metal film electrode 2. Metal film electrode 3 and dielectric film 4 form a laminated structure, metal film electrode 2 with lead electrode 8. In the metal film electrode 3 with lead electrode 9; A passivation protective layer is provided on the outside of the laminated structure.

[0039] The manufacturing method of laminated metallized film capacitor,

[0040] Step 1. Lay deposition mask I5 on the clean alumina substrate (the design of deposition mask 5 is based on ...

Embodiment 2

[0046] Embodiment 2 of the present invention: manufacturing method of laminated metalized film capacitor,

[0047] Step 1. Lay deposition mask I5 on a clean aluminum nitride substrate (the design of deposition mask 5 is based on the specifications, model, capacitance and other technical parameters of the capacitor), and deposit about 0.20 microns thick by magnetron sputtering Metal film electrode made of niobium metal 2; After the deposition is completed, the metal film electrode 2 Heat treatment at 700°C for about 30 minutes to obtain a uniform and dense metal film electrode 2;

[0048] Step 2. On the basis of step 1, select the metal electrode layer mask 6, and deposit about 0.08 microns thick niobium pentoxide dielectric film 4 by magnetron sputtering; after the deposition is completed, perform 700 Heat treatment at ℃ for about 30 minutes to obtain a uniform and dense dielectric film 4;

[0049] Step 3. On the basis of Step 2, select a deposition mask 7. Using magnetron sp...

Embodiment 3

[0053] Embodiment 3 of the present invention: manufacturing method of laminated metallized film capacitor,

[0054] Step 1. Lay a deposition mask I5 on a clean silicon dioxide substrate (the design of the deposition mask 5 is based on the specifications, model, capacitance and other technical parameters of the capacitor), and use magnetron sputtering to deposit about 0.30 microns thick Metal film electrode made of copper-silver alloy 2; After the deposition is completed, the metal film electrode 2 Heat treatment at 700°C for about 30 minutes to obtain a uniform and dense metal film electrode 2;

[0055] Step 2. On the basis of Step 1, select the metal electrode layer mask 6, and use magnetron sputtering to deposit about 0.12 microns thick aluminum oxide dielectric film 4; after the deposition is completed, heat the dielectric film 4 at 700°C About 30 minutes to obtain a uniform and dense dielectric film 4;

[0056] Step 3. On the basis of Step 2, select a deposition mask 7. U...

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Abstract

The invention discloses a laminated metallic film capacitor which comprises an insulating base plate. A metallic film electrode and a metallic film electrode are arranged on the insulating base plate; a medium film for completely separating the metallic film electrode from the metallic film electrode is arranged between the metallic film electrode and the metallic film electrode; the metallic film electrode, the metallic film electrode and the medium film form a laminated structure; the metallic film electrode is provided with an extraction electrode; the metallic film electrode is provided with an extraction electrode; and a passivating protective layer is arranged outside the laminated structure. The laminated metallic film capacitor adopts a film made of material such as tantalum pentoxide and the like which is insulating and has good chemical stability to be taken as a dielectric medium so as to solve the problems that a dielectric medium of a general film capacitor has low dielectric constant, poor heat resistance, poor film forming performance and low mechanical strength, and the like. In addition, due to masking process, two metallic films are deposited as the electrodes, so that the metal using amount is greatly reduced, the production cost is lowered, and the producing process is simple.

Description

Technical field [0001] The invention relates to an electronic component and a preparation method thereof, in particular to a capacitor and a preparation method thereof. Background technique [0002] The film capacitor has a wide capacity range, a very wide operating voltage range, good temperature characteristics, high stability, can be metalized, and has self-healing properties. It is widely used in automotive electronics, aerospace, communications, military and other industries. With the widespread application of ultra-large-scale integrated circuits, electronic components are gradually developing towards full curing, miniaturization, thin film and chip, which makes the traditional plastic film and silicon dioxide as the main capacitor dielectric materials have a certain development space. Constraints. Current capacitors have problems such as low dielectric constant of the medium, poor heat resistance, poor film formation, and low mechanical strength. Summary of the invention...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/33H01G4/10H01G4/005
Inventor 邓朝勇马亚林石健张安邦
Owner GUIZHOU UNIV
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