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Laminated metallic film capacitor and preparing method thereof

A metallized film, metal film technology, applied in the direction of film/thick film capacitors, multilayer capacitors, fixed capacitor electrodes, etc., can solve the problems of low mechanical strength, low dielectric constant, poor film formation, etc., to achieve low production costs , the effect of low resistivity and long service life

Inactive Publication Date: 2013-07-03
GUIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current capacitors have problems such as low dielectric constant of the medium, poor heat resistance, poor film formation, and low mechanical strength.

Method used

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  • Laminated metallic film capacitor and preparing method thereof
  • Laminated metallic film capacitor and preparing method thereof
  • Laminated metallic film capacitor and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1 of the present invention: the structure of the laminated metallized film capacitor is as follows Figure 14 As shown, it includes an insulating substrate 1 made of alumina, and a metal thin film electrode made of tantalum is arranged on the insulating substrate 1 2 and metal thin film electrodes made of tantalum 3. On metal thin film electrodes 2 with metal thin film electrodes 3 is provided with a dielectric film 4 that completely separates them. The dielectric film 4 is made of tantalum pentoxide, and the metal film electrode 2. Metal thin film electrode 3 and the dielectric film 4 form a laminated structure, and the metal film electrode 2 with lead-out electrodes 8. On metal thin film electrodes 3 is equipped with lead-out electrodes 9; A passivation protection layer is provided outside the laminated structure.

[0039] A method for manufacturing a laminated metallized film capacitor,

[0040] Step 1. Lay a deposition mask I5 on a cl...

Embodiment 2

[0046] Embodiment 2 of the present invention: the manufacturing method of laminated metallized film capacitor,

[0047] Step 1. Lay a deposition mask I5 on a clean aluminum nitride substrate (the design of the deposition mask 5 is based on the requirements of technical parameters such as capacitor specifications, models, and capacitance values), and deposit a thickness of about 0.20 microns by magnetron sputtering. Metal thin film electrodes made of niobium metal 2; After the deposition is completed, the metal thin film electrode 2 Heat treatment at 700°C for about 30 minutes to obtain a uniform and dense metal thin film electrode 2;

[0048] Step 2. On the basis of step 1, select the metal electrode layer mask 6, and use the magnetron sputtering method to deposit a niobium pentoxide dielectric film 4 with a thickness of about 0.08 micron; ℃ heat treatment for about 30 minutes to obtain a uniform and dense dielectric film 4;

[0049] Step 3. On the basis of step 2, s...

Embodiment 3

[0053] Embodiment 3 of the present invention: the manufacturing method of laminated metallized film capacitor,

[0054] Step 1. Lay a deposition mask I5 on a clean silicon dioxide substrate (the design of the deposition mask 5 is based on the requirements of technical parameters such as capacitor specifications, models, and capacitance values), and deposit a thickness of about 0.30 microns by magnetron sputtering. Metal thin film electrodes prepared from copper-silver alloy 2; After the deposition is completed, the metal thin film electrode 2 Heat treatment at 700°C for about 30 minutes to obtain a uniform and dense metal thin film electrode 2;

[0055] Step 2. On the basis of step 1, select the metal electrode layer mask 6, and deposit an aluminum oxide dielectric film 4 with a thickness of about 0.12 microns by magnetron sputtering; after the deposition is completed, heat-treat the dielectric film 4 at 700°C About 30 minutes to obtain a uniform and dense dielectric ...

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Abstract

The invention discloses a laminated metallic film capacitor which comprises an insulating base plate. A metallic film electrode and a metallic film electrode are arranged on the insulating base plate; a medium film for completely separating the metallic film electrode from the metallic film electrode is arranged between the metallic film electrode and the metallic film electrode; the metallic film electrode, the metallic film electrode and the medium film form a laminated structure; the metallic film electrode is provided with an extraction electrode; the metallic film electrode is provided with an extraction electrode; and a passivating protective layer is arranged outside the laminated structure. The laminated metallic film capacitor adopts a film made of material such as tantalum pentoxide and the like which is insulating and has good chemical stability to be taken as a dielectric medium so as to solve the problems that a dielectric medium of a general film capacitor has low dielectric constant, poor heat resistance, poor film forming performance and low mechanical strength, and the like. In addition, due to masking process, two metallic films are deposited as the electrodes, so that the metal using amount is greatly reduced, the production cost is lowered, and the producing process is simple.

Description

technical field [0001] The invention relates to an electronic component and a preparation method thereof, in particular to a capacitor and a preparation method thereof. Background technique [0002] Film capacitors have a wide range of capacity, extremely wide operating voltage range, good temperature characteristics, high stability, can be metallized, and have self-healing properties. They are widely used in automotive electronics, aerospace, communications, military and other industries. With the wide application of VLSI, electronic components are gradually developing in the direction of full solidification, miniaturization, thin film and chip, which limits the development space of traditional plastic film and silicon dioxide as the main capacitor dielectric materials. constraints. The current capacitors have problems such as low dielectric constant of the medium, poor heat resistance, poor film formation, and low mechanical strength. Contents of the invention [0003]...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/33H01G4/10H01G4/005
Inventor 邓朝勇马亚林石健张安邦
Owner GUIZHOU UNIV
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