Graphical substrate preparation method for improving luminous efficiency of GaN-based LED
A technology for patterning substrates and luminous efficiency, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of difficult control of pattern consistency, many pattern transfer processes, and increased production costs, so as to improve light extraction efficiency and improve External quantum efficiency, quality improvement effect
Active Publication Date: 2013-02-13
YANGZHOU ZHONGKE SEMICON LIGHTING
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[0005] 1. Using semiconductor photolithography technology, the preparation process is complicated, which increases the production cost;
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[0019] 1. Patterned substrate preparation steps:
[0020] 1. Coating a layer of chloride saturated salt solution on the sapphire plane substrate, the chloride may be sodium chloride, cesium chloride, potassium chloride and other chlorides.
[0021] 2. Dry the sapphire substrate coated with chloride saturated salt solution, and obtain chloride particles with a size of 0.1-10 microns and a thickness of 0.05-50 microns on the sapphire flat substrate, which are used for dry etching mask.
[0022] 3. Using Cl2, BCl3, Ar, He and other gases, use plasma etching equipment to etch the mask layer for 30 seconds to 30 minutes to obtain a patterned sapphire substrate. The pattern features are on the order of microns, and the bottom of the pattern is The size is 0.1-10 microns, the pattern pitch is 0.1-5 microns, and the pattern height is 0.1-3 microns.
[0023] The substrate was cleaned for epitaxial growth.
[0024] 2. Epitaxial growth process:
[0025] 1. A low-temperature gallium n...
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The invention, which belongs to the preparation process technology field of a semiconductor graphical substrate, relates to a graphical substrate preparation method for improving a luminous efficiency of a GaN-based LED. According to the method, a chloride saturated salt solution is coated on a sapphire plane substrate; after a drying process, a microdimensional chloride particle mask layer is obtained on the sapphire plane substrate; and then, plasma etching is carried out on the mask layer to obtain patterned sapphire substrate; and the substrate is cleaned clearly. According to the invention, a preparation process of a graphical substrate is simplified and thus manufacturing costs are reduced; and dislocation densities of a grown nitride epitaxial layer and an LED structure can be substantially reduced, so that the quality of a GaN epitaxial material can be improved. Moreover, graphical processing of the substrate surface enables a re-emergent probability of a photo after reflection by a graph can be increased and light extraction efficiency can be effectively improved, so that external quantum efficiency is enhanced.
Description
technical field [0001] The invention belongs to the technical field of semiconductor production, in particular to a patterned substrate preparation process. Background technique [0002] The current semiconductor lighting technology based on gallium nitride-based light-emitting diodes (LEDs) is penetrating into all aspects of social life, such as landscape lighting, special lighting, and liquid crystal backlight lighting. However, due to the inherent defects, high dislocation density, and poor material quality of III-nitrides, their brightness needs to be further improved to enter the field of general lighting. The focus is to improve the internal quantum efficiency and light extraction efficiency of GaN-based LEDs. [0003] Sapphire is currently the main GaN-based LED growth substrate for commercial applications. However, due to the large difference in the lattice and thermal expansion coefficients of sapphire and GaN materials, the epitaxially grown materials have large re...
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IPC IPC(8): H01L33/00
Inventor 李志聪李盼盼李鸿渐李璟王国宏
Owner YANGZHOU ZHONGKE SEMICON LIGHTING