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Sintered in-ga-zn-o-type oxide

A technology of sintered body and oxide, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid state devices, etc., to achieve the effect of high relative density, high flexural strength and low resistivity

Inactive Publication Date: 2012-05-30
IDEMITSU KOSAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, no research has been conducted on the use of oxide sintered bodies or sputtering targets (Non-Patent Document 3)

Method used

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  • Sintered in-ga-zn-o-type oxide
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  • Sintered in-ga-zn-o-type oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0188] Example 1 [Production of oxide sintered body]

[0189] As raw material powder, In is used 2 O 3 (Specific surface area: 11m 2 / g, purity 99.99%), Ga 2 O 3 (Specific surface area: 11m 2 / g, purity 99.99%) and ZnO (specific surface area: 9m 2 / g, purity 99.99%) of each powder. The raw materials were mixed so as to have the atomic composition ratio shown in Table 1, and mixed with a super mixer for 4 minutes. The mixing is performed in the atmosphere at a rotation speed of 3000 rpm.

[0190] The obtained mixed powder was calcined in an electric furnace at 1000°C for about 5 hours in an air atmosphere. The obtained calcined powder was put into a pulverizer together with zirconia beads, and finely pulverized at a rotation speed of 300 rpm for 3 hours. As a result of fine pulverization, the particle size of the raw material powder was 0.55 μm in terms of the average particle size (D50).

[0191] To the finely pulverized raw material powder, water was added as a slurry (slurry) ha...

Embodiment 2

[0231] Example 2, Comparative Example 1, 2

[0232] As shown in Table 1, except for changing the composition and sintering conditions, a target and a TFT were produced in the same manner as in Example 1, and evaluated. The results are shown in Table 1.

Embodiment 3

[0234] (A) Production of oxide sintered body

[0235] Mixing specific surface area 15m 2 / g, In with a purity of 99.99% 2 O 3 Powder, specific surface area 14m 2 / g, Ga with a purity of 99.99% 2 O 3 Powder, and specific surface area 4m 2 / g, ZnO powder with a purity of 99.99%, the particle size of each raw material powder was adjusted to 1 μm or less, and was mixed and pulverized with a ball mill. Take out the prepared slurry and use the slurry supply speed of 140ml / min, hot air temperature of 140℃, and hot air volume of 8Nm 3 Under the condition of / min, the spray dryer was used for rapid drying and granulation. The pellets are pressurized at 3ton / cm by cold isostatic pressing 2 Under the pressure of, the molded body is obtained.

[0236] Then, the compact is sintered. The temperature rise during sintering is performed at a rate of 0.5°C / min in the atmosphere until 600°C, and then at a rate of 1°C / min while introducing oxygen at a flow rate of 10L / min until 600~800°C Speed ​​up ...

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Abstract

A sintered oxide containing In (element indium), Ga (element gallium) and Zn (element zinc), having a total content of In, Ga and Zn of 95 at.% or more relative to the total amount of elements contained in the sintered oxide excluding element oxygen, and comprising a compound that is represented by the formula: In2O3 and has a bixbyite structure and a compound that is represented by the formula: ZnGa2O4 and has a spinel structure.

Description

Technical field [0001] The present invention relates to an oxide sintered body. In particular, it relates to an oxide sintered body suitable for forming an amorphous oxide film by sputtering. Background technique [0002] Field effect transistors such as thin film transistors (TFTs) are widely used as unit electronic components of semiconductor memory integrated circuits, high-frequency signal amplifying components, liquid crystal driving components, etc., and are now the largest number of practical electronic devices. Among them, with the remarkable development of display devices in recent years, in various display devices such as liquid crystal display devices (LCD), electroluminescence display devices (EL), and field emission displays (FED), the display device is driven as a driving voltage applied to the display element. TFT is widely used as the switching element. [0003] As a material for the semiconductor layer (channel layer) of the main component of the field effect tra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/00C23C14/08C23C14/34H01L21/363H01L29/786
CPCC04B2235/5409C04B2235/5445H01L29/7869C04B2235/3293H01L29/66742C04B2235/3232H01L21/02565C04B2235/6567C04B2235/76C04B2235/80C04B2235/77C04B2235/763C04B2235/96C04B35/01C23C14/3414C04B35/62695C04B2235/3287C04B2235/3418C04B2235/3284C04B35/453C04B2235/6585C23C14/08C04B2235/3286H01L21/02631C04B2235/6562C04B2235/604H01L21/02554C04B2235/656C04B2235/3256C04B2235/3244H01L29/66969C04B35/00C23C14/34H01L21/34
Inventor 矢野公规川岛浩和糸濑将之井上一吉
Owner IDEMITSU KOSAN CO LTD
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