Diffusion technology for reducing dark current of metallurgical silicon solar battery

A technology of solar cells and diffusion technology, applied in the field of solar cells, can solve the problems of low efficiency of solar cells, increased probability of photocarrier recombination, large dark current, etc., achieve deep junctions, improve conversion efficiency and yield, and prevent pollution effect

Inactive Publication Date: 2012-06-20
HEFEI & SOLAR TECH
View PDF4 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the industry generally uses the diffusion process of solar-grade silicon to produce metallurgical-grade silicon solar cells. The presence of such a large amount of impurities such as iron, carbon, boron, and oxygen will increase the recombination probability of photocarriers, and the manufactured solar cells generally have lower efficiency. Low, large dark current

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The diffusion process for reducing the dark current of metallurgical-grade silicon solar cells provided in this embodiment includes the following steps:

[0022] Use P-type metallurgical grade polysilicon wafers, after conventional cleaning and texturing, and then diffuse, the specific steps of diffusion are as follows:

[0023] (1) At 750°C, send the quartz boat loaded with metallurgical-grade silicon wafers into the diffusion furnace;

[0024] (2) The maximum nitrogen flow rate is 30000 mL / min, and the furnace tube is purged for 2 minutes;

[0025] (3) In the case of 750 ° C, the flow rate of nitrogen is 30000mL / min, the flow rate of dry oxygen is 600mL / min, and the time is 10min, and oxidation is carried out before diffusion;

[0026] (4) Raise the temperature in the diffusion furnace to 830°C, feed a small nitrogen flow rate of 1200 mL / min, a large nitrogen flow rate of 30000 mL / min, and a dry oxygen flow rate of 2000 mL / min for 30 minutes to form high-concentratio...

Embodiment 2

[0036] The diffusion process for reducing the dark current of metallurgical-grade silicon solar cells provided in this embodiment includes the following steps:

[0037] Use P-type metallurgical grade polysilicon wafers, after conventional cleaning and texturing, and then diffuse, the specific steps of diffusion are as follows:

[0038] (1) At 700°C, send the quartz boat loaded with metallurgical-grade silicon wafers into the diffusion furnace;

[0039] (2) The maximum nitrogen flow rate is 10000 mL / min, and the furnace tube is purged for 10 minutes;

[0040] (3) In the case of 700°C, the flow rate of nitrogen is 10000mL / min, the flow rate of dry oxygen is 500mL / min, and the time is 10min, and oxidation is carried out before diffusion;

[0041] (4) Raise the temperature in the diffusion furnace to 800°C, feed a small nitrogen flow rate of 500mL / min, a large nitrogen flow rate of 10000 mL / min, and a dry oxygen flow rate of 500 mL / min for 60 minutes to form high-concentration ph...

Embodiment 3

[0051] The diffusion process for reducing the dark current of metallurgical-grade silicon solar cells provided in this embodiment includes the following steps:

[0052] Use P-type metallurgical grade monocrystalline silicon wafers to undergo conventional cleaning and texturing, and then diffuse. The specific steps of diffusion are as follows:

[0053] (1) At 750°C, send the quartz boat loaded with metallurgical-grade silicon wafers into the diffusion furnace;

[0054](2) The maximum nitrogen flow rate is 40000 mL / min, and the furnace tube is purged for 1 minute;

[0055] (3) In the case of 750°C, the flow rate of nitrogen is 40000mL / min, the flow rate of dry oxygen is 3000mL / min, and the time is 1min, and oxidation is carried out before diffusion;

[0056] (4) Raise the temperature in the diffusion furnace to 850°C, feed a small nitrogen flow rate of 3000mL / min, a large nitrogen flow rate of 40000 mL / min, and a dry oxygen flow rate of 3000 mL / min for 10 minutes to form high-c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a diffusion technology for reducing dark current of a metallurgical silicon solar battery, which includes the steps of firstly, carrying out concentrated phosphorus diffusion at the low temperature: feeding from a high-concentration phosphorus source for diffusion at the low temperature so as to form high-concentration phosphor doping; secondly, performing phosphorus gettering for a long time at the high temperature: releasing impurities such as deposited impurities, displacement impurities or other impurity complexes of iron, carbon, boron, oxygen and the like into interstitial impurities at the high temperature, so that the interstitial impurities quickly release into a phosphorosilicate glass layer with high solid solubility, high-temperature phosphorus gettering is completed, and the minority carrier lifetime of a body is prolonged; and thirdly, propelling at the lower temperature: at the lower temperature, propelling the junction depth, adjusting to square resistance meeting technological requirements, and lowering the solid solubility of the impurities in a surface concentrated area along with the temperature, so that the interstitial impurities turn to the deposited impurities, the complex impurities and the like. A metallurgical crystal silicon wafer is diffused by means of the diffusion technology, so that the dark current of the solar battery can be effectively reduced, and the conversion efficiency of the solar battery is improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a diffusion process for reducing the dark current of metallurgical-grade silicon solar cells. Background technique [0002] The basic manufacturing process of conventional solar cells: cleaning and making suede, diffusion sheet resistance, edge etching, dephosphorous silicon glass, anti-reflection coating, screen printing grid lines, electrical performance testing, sorting and packaging. The diffusion process plays a very important role in the solar cell manufacturing process and is the core process of solar cell manufacturing. The purpose of diffusion is to form the heart PN junction of the solar cell, and the structure of the PN junction directly affects the electrical performance parameters such as short-circuit current, open-circuit voltage, and dark current of the solar cell. [0003] Metallurgical grade silicon is generally produced by purification by physi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/223
CPCY02P70/50
Inventor 王永丰朱生宾刘光谢忠阳
Owner HEFEI & SOLAR TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products