Diffusion technology for reducing dark current of metallurgical silicon solar battery
A technology of solar cells and diffusion technology, applied in the field of solar cells, can solve the problems of low efficiency of solar cells, increased probability of photocarrier recombination, large dark current, etc., achieve deep junctions, improve conversion efficiency and yield, and prevent pollution effect
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Embodiment 1
[0021] The diffusion process for reducing the dark current of metallurgical-grade silicon solar cells provided in this embodiment includes the following steps:
[0022] Use P-type metallurgical grade polysilicon wafers, after conventional cleaning and texturing, and then diffuse, the specific steps of diffusion are as follows:
[0023] (1) At 750°C, send the quartz boat loaded with metallurgical-grade silicon wafers into the diffusion furnace;
[0024] (2) The maximum nitrogen flow rate is 30000 mL / min, and the furnace tube is purged for 2 minutes;
[0025] (3) In the case of 750 ° C, the flow rate of nitrogen is 30000mL / min, the flow rate of dry oxygen is 600mL / min, and the time is 10min, and oxidation is carried out before diffusion;
[0026] (4) Raise the temperature in the diffusion furnace to 830°C, feed a small nitrogen flow rate of 1200 mL / min, a large nitrogen flow rate of 30000 mL / min, and a dry oxygen flow rate of 2000 mL / min for 30 minutes to form high-concentratio...
Embodiment 2
[0036] The diffusion process for reducing the dark current of metallurgical-grade silicon solar cells provided in this embodiment includes the following steps:
[0037] Use P-type metallurgical grade polysilicon wafers, after conventional cleaning and texturing, and then diffuse, the specific steps of diffusion are as follows:
[0038] (1) At 700°C, send the quartz boat loaded with metallurgical-grade silicon wafers into the diffusion furnace;
[0039] (2) The maximum nitrogen flow rate is 10000 mL / min, and the furnace tube is purged for 10 minutes;
[0040] (3) In the case of 700°C, the flow rate of nitrogen is 10000mL / min, the flow rate of dry oxygen is 500mL / min, and the time is 10min, and oxidation is carried out before diffusion;
[0041] (4) Raise the temperature in the diffusion furnace to 800°C, feed a small nitrogen flow rate of 500mL / min, a large nitrogen flow rate of 10000 mL / min, and a dry oxygen flow rate of 500 mL / min for 60 minutes to form high-concentration ph...
Embodiment 3
[0051] The diffusion process for reducing the dark current of metallurgical-grade silicon solar cells provided in this embodiment includes the following steps:
[0052] Use P-type metallurgical grade monocrystalline silicon wafers to undergo conventional cleaning and texturing, and then diffuse. The specific steps of diffusion are as follows:
[0053] (1) At 750°C, send the quartz boat loaded with metallurgical-grade silicon wafers into the diffusion furnace;
[0054](2) The maximum nitrogen flow rate is 40000 mL / min, and the furnace tube is purged for 1 minute;
[0055] (3) In the case of 750°C, the flow rate of nitrogen is 40000mL / min, the flow rate of dry oxygen is 3000mL / min, and the time is 1min, and oxidation is carried out before diffusion;
[0056] (4) Raise the temperature in the diffusion furnace to 850°C, feed a small nitrogen flow rate of 3000mL / min, a large nitrogen flow rate of 40000 mL / min, and a dry oxygen flow rate of 3000 mL / min for 10 minutes to form high-c...
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