Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lamb wave immunosensor and manufacturing method thereof

An immunosensor and sensor technology, applied in the fields of instruments, scientific instruments, measuring devices, etc., can solve the problems of difficult to achieve sensor arraying, high-throughput large-sample molecular level measurement, etc., achieve easy automation, improve test accuracy, The effect of a simple measurement process

Inactive Publication Date: 2012-06-27
SUZHOU SASENS CO LTD
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, conventional immunobiosensors, such as surface plasmon resonance immunosensors and quartz resonance sensors, only achieve a single measurement, and it is difficult to achieve sensor arrays, high-throughput, and rapid molecular-level measurement of large samples.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lamb wave immunosensor and manufacturing method thereof
  • Lamb wave immunosensor and manufacturing method thereof
  • Lamb wave immunosensor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] see figure 1 , figure 2 As shown, a Lamb wave immune sensor includes an upper magnet 1 and a lower magnet 11, a Lamb wave sensor 12 is arranged between the upper magnet 1 and the lower magnet 11, and a pipe pressure is glued above the Lamb wave sensor 12. Cover 2; further, combine image 3 As shown, the Lamb wave sensor 12 includes a silicon thin film structure 7 provided with a plurality of sample cells 701 , a conductive ground layer 8 is located below the silicon thin film structure 7 , and a piezoelectric material layer 9 is located below the conductive ground layer 8 , the piezoelectric material layer 9 is provided with a layer of IDT electrode layer, and further, combined with Figure 4As shown in the figure, the IDT electrode layer includes a plurality of tooth-shaping electrodes 10 and a plurality of welding point ports 13, a pair of electrode ports 14 are respectively provided on the plurality of tooth-shaping electrodes 10, and the labeled antibody 3, Immu...

Embodiment 2

[0058] see figure 1 As shown, a method for fabricating a Lamb wave device includes the following steps:

[0059] Step 1) Prepare silicon wafer: take a 3-inch, 380μm thick, double-sided oxidized P-type (100) silicon wafer with a surface thickness change of less than 3μm;

[0060] Step 2) Throwing off the photoresist: The silicon wafer is first cleaned with a mixture of acetone and alcohol, then soaked in deionized water for 5 minutes, then dried, and then the adhesive and photoresist are thrown off both sides of the silicon wafer;

[0061] Step 3) Photolithography and development: use a photolithography machine to expose the silicon wafer to generate the pattern of the template on the surface of the silicon wafer, and then put it into the developer for etching to generate the desired pattern on the photoresist layer;

[0062] Step 4) Etch the silicon dioxide: put the silicon wafer into the hydrofluoric acid solution to etch the silicon dioxide layer, so that the surface patter...

Embodiment 3

[0075] see figure 1 As shown, a method for detecting carcinoembryonic antigen, which comprises the following steps:

[0076] Step 1) Mix the analyte 5 with the immune micro-magnetic beads 4 and inject them into the sample cell 701 of the Lamb wave device 12 for co-incubation. The surface of the immune micro-magnetic beads 4 is coated with a certain carcinoembryonic antigen antibody;

[0077] Step 2) Turn on the magnetic field below the Lamb wave immunosensor, so that the immunomagnetic spheres are adsorbed to the surface of the Lamb wave device 12, and together with the capture antibody 6 on the surface of the Lamb wave device 12, form a ternary complex of "immunomagnetic sphere-analyte-antibody" thing;

[0078] Step 3) Turn on the magnetic field above the Lamb wave immunosensor, so that the immunomicromagnetic beads 4 that do not form the "immunomagnetic ball-analyte-antibody" ternary complex are adsorbed to the top of the Lamb wave device 12;

[0079] Step 4) Add washing s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
heightaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a Lamb wave immunosensor capable of performing array, high-flux, large-sample and quick measurement on immunoreaction. The Lamb wave immunosensor comprises an upper magnet and a lower magnet, wherein a Lamb wave sensor is arranged between the upper magnet and the lower magnet; a pipeline gland is glued above the Lamb wave sensor; the Lamb wave sensor comprises a silicon thin film structure with a plurality of sample cells; a conductive stratum is arranged below the silicon thin film structure; a piezoelectric material layer is arranged below the conductive stratum; an integrated device technology (IDT) electrode layer is arranged on the piezoelectric material layer, and comprises a plurality of gear shaping electrodes and a plurality of welding spot ports; a pair of electrode ports is arranged on each of the gear shaping electrodes; marking antibodies, immune micro magnetic balls and capturing antibodies are cultivated in the sample cells; a sample cell channel is formed on the pipeline surface of the pipeline gland, which is attached to the Lamb wave sensor; and a through hole is formed in each of two ends of the sample cell channel.

Description

technical field [0001] The invention belongs to the intersection field of micro-electromechanical systems (MEMS) and biological immune sensors, and specifically relates to a fusion method of a Lamb wave and a micro-magnetic bead, a manufacturing method of a Lamb wave device, and an application of the Lamb wave device. [0002] Background technique [0003] In recent years, array immunosensors based on microelectromechanical systems (MEMS) technology are one of the frontiers of today's high-tech development. It is converted into an electrical signal by a transducer, thereby quantitatively detecting the antigen or antibody. [0004] Biosensors are instruments that are sensitive to biological substances and convert their concentrations into electrical signals for detection. They have been gradually used in the fields of clinical medicine, food, industry and environmental detection. As the most important type of biosensor, immunosensor is a biosensor developed by using the rec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N33/551G01N33/531
Inventor 周连群吴一辉
Owner SUZHOU SASENS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com