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Method for production of laminate

一种制造方法、叠层体的技术，应用在半导体/固态器件制造、化学仪器和方法、涂层等方向，能够解决基板不容易得到等问题，达到提高发光特性、结晶性好的效果

Active Publication Date: 2012-07-04
STANLEY ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the case of manufacturing the above-mentioned ultraviolet light-emitting device, it is not easy to obtain a substrate that is relatively consistent with Al-containing Group III nitride semiconductor crystals in terms of lattice constant and thermal expansion coefficient.

Method used

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  • Method for production of laminate
  • Method for production of laminate
  • Method for production of laminate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0106] hot cleaning

[0107] The sapphire substrate adopts a C-plane substrate inclined 0.15° to the M-axis direction. After setting this on the susceptor in the MOCVD apparatus, the sapphire substrate was heated to 1250° C. while flowing hydrogen at a flow rate of 10 slm, and kept at that temperature for 10 minutes. In addition, in this MOCVD apparatus, a member made of a boron nitride ceramic material is arranged on the surface portion where the sapphire substrate is heated to a temperature of 1000° C. or higher by radiant heat.

[0108] first growth process

[0109] Next, raise the temperature of the sapphire substrate to 950°C, and form a 20nm substrate under the conditions of a trimethylaluminum flow rate of 6.6 μmol / min, an ammonia flow rate of 1 slm, an oxygen flow rate of 0.5 sccm, a total flow rate of 10 slm, and a pressure of 40 Torr. thick AlN initial single crystal layer (formation of the initial single crystal layer). Here, the oxygen source (oxygen-containing ...

Embodiment 2

[0116] In order to more accurately analyze the oxygen concentration in the initial single crystal layer of the laminate obtained in Example 1, except that the oxygen used in Example 1 was changed to a stable isotope of oxygen (mass number 18) at 99.9 atomic %, the same A laminate was produced under the same conditions as in Example 1. The obtained results are shown in Table 1.

Embodiment 3

[0118] In the first growth step of Example 1, a laminate was produced under the same conditions as in Example 1 except that the oxygen flow rate was changed to 1.0 sccm. The results obtained are shown in Table 1 and figure 2 .

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Abstract

Disclosed is a novel Group III polar growth method on a sapphire substrate. Specifically disclosed is a method for producing a laminate which comprises a sapphire substrate and a single crystal layer comprising a high-Al-content nitride of a Group III element and laminated on the sapphire substrate, through an organic metal gas phase growth process. The method comprises: a first growth step of supplying a raw material gas for growing single crystals of the nitride of the Group III element and an oxygen source gas onto the sapphire substrate to grow an initial single crystal layer having an oxygen concentration of 11020 to 51021 cm-3 inclusive into a thickness of 15 to 40 nm inclusive; and a second growth step of supplying the raw material gas onto the initial single crystal layer without supplying the oxygen source gas or supplying the oxygen source gas in an amount smaller than that supplied in the first growth step together with the raw material gas, thereby growing a second Group III nitride single crystal layer having an oxygen concentration smaller than that in the initial single crystal layer.

Description

technical field [0001] The present invention relates to a new laminated body in which a Group III nitride single crystal layer is laminated on a sapphire substrate by an organic metal vapor phase growth method and a manufacturing method thereof. Specifically, it relates to a novel laminate usable for ultraviolet light emitting elements (light emitting diodes and laser diodes), ultraviolet sensors, and the like, and a method of manufacturing the same. Background technique [0002] Group III nitride semiconductors containing aluminum (Al) have a direct-transition band structure in the ultraviolet region corresponding to a wavelength of 200nm to 360nm, and thus can manufacture high-efficiency ultraviolet light-emitting devices. [0003] Group III nitride semiconductor devices use metal organic vapor phase growth method (MOCVD method), molecular beam epitaxy method (MBE method), or halide vapor phase epitaxy method (HVPE method) and other vapor phase growth methods to crys...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C23C16/34H01L21/205H01L33/32
CPCH01L21/02458H01L21/0262H01L21/02433C30B29/403H01L21/0242H01L33/007C30B25/183H01L21/0254
Inventor 木下亨高田和哉
Owner STANLEY ELECTRIC CO LTD
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