High-temperature-resistance compound medium isolating method of aluminum base film temperature sensor

Abstract

The invention provides a high-temperature-resistance compound medium isolating method of an aluminum base film temperature sensor. The method comprises the following steps: processing aluminum into a sensor substrate; performing polishing and electric chemical polishing pretreatment on the sensor substrate; placing the sensor substrate into an electrolyte aqueous solution containing a rare-earth element additive and performing the insulated anodizing; performing high-temperature hole-sealing treatment for 30min in sealing liquid containing rare-earth elements, and the naturally drying; mechanically polishing the surface of a sealed oxidation film; and preparing an Al2O3 layer according to an electronic beam evaporation method. Compared with a medium isolated layer obtained according to the traditional technology, the medium isolated layer obtained according to the method provided by the invention has the advantages of high substrate binding force, excellent insulating property, no cracking under the condition of 550 DEG C high-temperature thermal treatment; and moreover, the manufacturing process is simple and easy to implement.

Description

technical field [0001] The invention relates to a processing method for electronic components. Specifically, it is a high-temperature-resistant composite dielectric isolation method for an aluminum-based film temperature sensor. Background technique [0002] The traditional thin film temperature sensor realizes dielectric isolation mostly by directly using Al 2 o 3 , SiO 2 ceramics as substrates. If conductive ceramics or conductive metals are used as the substrate, a layer of dielectric isolation layer needs to be sputtered on the surface by PVD or CVD. Although the isolation method directly using the insulating medium as the substrate has good insulation performance, it has the characteristics of difficult substrate processing and poor mechanical properties. The method of sputtering a dielectric isolation film on the surface of a conductive metal or ceramic by external force has the disadvantages of poor insulation performance, easy breakdown, and poor film-substrate ...

AI Technical Summary

Problems solved by technology

On the one hand, holes and defects on the surface of the anodized film affect the continuity of the metal film on the surface, and even cause discontinuity of sensitive lines;

If wet etching is used, it is easy to cause the etchant to accumulate in the hole defect during the process of etching the resistance line, causing the line to be etched. Therefore, the insulating anodic oxide film cannot be used alone as a dielectric isolation layer

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