Method for preparing bismuth ferrite functional film by short wave ultraviolet irradiation pretreatment

A technology of ultraviolet light and bismuth ferrite, applied in chemical instruments and methods, iron compounds, inorganic chemistry, etc., can solve the problems of large film shrinkage, film cracks, etc., and achieve a compact and smooth surface, simple process, and low experimental conditions. Effect

Active Publication Date: 2014-06-04
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, for the preparation of bismuth ferrite thin films by the self-assembly method, pyrolysis organic matter is used. Due to the excessive shrinkage of the film when the organic matter is decomposed at high temperature, cracks will occur in the prepared thin film.

Method used

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  • Method for preparing bismuth ferrite functional film by short wave ultraviolet irradiation pretreatment
  • Method for preparing bismuth ferrite functional film by short wave ultraviolet irradiation pretreatment
  • Method for preparing bismuth ferrite functional film by short wave ultraviolet irradiation pretreatment

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Embodiment 1

[0017] Step 1: Configuration of precursor solution. Weigh Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, measure glacial acetic acid, be dissolved in distilled water and be configured into a 200ml solution. Stir at room temperature until it is completely clear, add citric acid, continue to stir at room temperature until the solution is clear, and then obtain the precursor solution. In the precursor solution, the bismuth ion concentration is 0.01mol / L, the iron ion concentration is 0.045mol / L, The concentration is 0.02mol / L, and the volume fraction of glacial acetic acid is 2%.

[0018] Step 2: Functionalization of the substrate. The substrates were ultrasonically washed in deionized water, acetone, and absolute ethanol for 10 min. After irradiating with ultraviolet light for 20 min, soak in OTS (1vol%)-toluene solution for 30 min to prepare an OTS monolayer film, and dry at 120 °C for 5 min to remove organic matter. Finally, it was irradiated under ultraviolet light for 40 ...

Embodiment 2

[0024] Step 1: Configuration of precursor solution. Weigh Bi(NO 3 ) 3 ·5H 2 O, Fe(NO 3 ) 3 9H 2 O, measure glacial acetic acid, be dissolved in distilled water and be configured into a 200ml solution. Stir at room temperature until it is completely clear, add citric acid, continue to stir at room temperature until the solution is clear, and then obtain the precursor solution. In the precursor solution, the bismuth ion concentration is 0.01mol / L, the iron ion concentration is 0.01mol / L, The concentration is 0.02mol / L, and the volume fraction of glacial acetic acid is 2%.

[0025] Step 2: Functionalization of the substrate. The substrates were ultrasonically washed in deionized water, acetone, and absolute ethanol for 10 min. After irradiating with ultraviolet light for 20 min, soak in OTS (1vol%)-toluene solution for 30 min to prepare an OTS monolayer film, and dry at 120 °C for 5 min to remove organic matter. Finally, it was irradiated under ultraviolet light for 40 m...

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Abstract

The invention provides a method for preparing a bismuth ferrite functional film by short wave ultraviolet irradiation pretreatment. The method comprises the following steps of: dissolving Bi(NO3)3.5H2O and Fe(NO3)3.9H2O which serve as raw materials into distilled water, and regulating the pH value of the solution by using glacial acetic acid; preparing a film by using citric acid as a complexing agent, using a functionalized self-assembly single-layer film as a template and suspending the functionalized template on the surface of the solution through reverse adsorption; and drying at room temperature, treating in short wave ultraviolet (lambda is 184.9 nanometers), preserving the heat at the temperature of 550 DEG C and annealing, and thus obtaining the crystallized bismuth ferrite functional film. The amorphous bismuth ferrite functional film is treated in ultraviolet by combining a liquid-phase self-assembly and reverse adsorption technology, and the organic substance chain is oxidized through ozone generated by short wave ultraviolet irradiation air to remove organic substances. Because the organic substances are removed at the room temperature, the film is shrunk slightly, and cracks produced due to over high shrinkage of the film when the organic substances are decomposed at a high temperature are prevented.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a method for preparing a bismuth ferrite functional thin film through short-wave ultraviolet light irradiation pretreatment. Background technique [0002] In recent years, a new type of ferromagnetic electric material BiFeO 3 , as one of the few single-phase ferromagnetic materials with both ferroelectricity and magnetism at room temperature, has aroused great interest. BiFeO 3 The perovskite structure with a trigonal twist has a high Curie temperature (T C =810℃) and Neel temperature (T N =380℃), the electromagnetic coupling effect has extremely important application prospects in information storage, spintronic devices, magnetic sensors, and capacitor-inductor integrated devices. [0003] Currently for BiFeO 3 The preparation methods of thin films mainly include pulsed laser deposition method, magnetron sputtering method and so on. The advantage of the pulsed laser deposi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G49/00
Inventor 谈国强尹君
Owner SHAANXI UNIV OF SCI & TECH
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