Manufacturing method of semiconductor device for relieving stress of indium gallium aluminum nitrogen thin film
A technology of indium gallium aluminum nitrogen and thin film stress, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as unsatisfactory device reliability
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Embodiment approach 1
[0085] Figure 2-01 to Figure 2-41 It is used to explain the way to release and adjust the stress on the indium gallium aluminum nitride film and the realization process of the device structure by using the three transfer method, and also explain the realization process and method of the mentioned pattern electroplating without dicing . The whole process is briefly described as follows:
[0086] Patterned growth substrate;
[0087] Epitaxial indium gallium aluminum nitride film;
[0088] Depositing a P-type ohmic contact layer and a reflective layer, and patterning them to make them have a complementary structure with the electrode pads;
[0089] Make the first transfer substrate and remove the growth substrate;
[0090] De-edge treatment of InGaAlN film;
[0091] The passivation layer is patterned. A patterned passivation layer for blocking the electroplating current is distributed on the edge of the indium gallium aluminum nitride film and the groove between the indium gallium alumin...
Embodiment approach 2
[0146] The process and method of the first and second film transfers in this embodiment are the same as those of the first embodiment, but the third transfer method is different from that of the first embodiment. On completion Figure 2-28 After the steps shown in, the next step is to deposit a barrier layer and a pressure-bonding metal layer on the p-type ohmic contact layer and the reflective layer 204, and then bond and bond them with a substrate instead of pattern plating.
[0147] The barrier layer is composed of one or more laminates or alloys of several metals such as titanium, tungsten, nickel, platinum, gold, palladium, chromium, vanadium, zirconium, molybdenum, etc. It is evaporated or sputtered on the p-type ohmic contact Layer and reflective layer 204. At the same time, a pressure-welding metal layer is deposited on the barrier layer. The pressure-welding metal can be a common reflow solder paste material, or a common eutectic soldering gold-tin evaporation or sputter...
Embodiment approach 3
[0150] Figure 3-01 to Figure 3-10 It is used to illustrate the method for releasing and adjusting the stress of the indium gallium aluminum nitride film of the present invention by using the three transfer method and the process of obtaining the structure of the light emitting device. The difference between this embodiment and the previous two embodiments is: the third transfer of the first and second embodiments is to transfer the indium gallium aluminum nitride film to the difficult-to-cut metal substrate. Transfer to an easy-to-cut substrate; in this embodiment, the film is transferred to a continuous flat substrate, and the chips are cut to form discrete devices after all the chip patterning processing is completed.
[0151] The first transfer of this embodiment is the same as Embodiment 1 and Embodiment 2, except that this embodiment does not need to provide a passivation layer pattern that is beneficial to blocking the electroplating current, that is, the intermediate passi...
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Abstract
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