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Grinding liquid for sapphire substrate and preparation method of grinding liquid

A technology of sapphire substrate and lapping liquid, which is applied to polishing compositions containing abrasives, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve the problem of low flatness of sapphire wafers, uneven diamond particle size, and low grinding efficiency. problems, to achieve the effect of improving grinding efficiency, no obvious scratches, and reducing processing costs

Inactive Publication Date: 2014-03-12
CHANGZHOU TONGTAI PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the common grinding process uses a single diamond with a high hardness of 3-6 μm as the grinding fluid for the sapphire substrate. Due to the non-uniform diamond particle size of the grinding fluid, there are deep scratches on the polished sapphire substrate with the naked eye. It is extremely difficult to remove in the subsequent chemical mechanical polishing process. At the same time, in order to reduce costs, many merchants use extremely low diamond concentration in the polishing solution, resulting in low polishing efficiency and low flatness of the polished sapphire wafer.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Fully mixing silicon carbide micropowder with a particle diameter of 2 to 4 microns and diamond micropowder with a particle diameter of 2 to 4 microns according to a mass ratio of 1:10 using a spiral ribbon mixer to obtain a mixed grinding powder;

[0020] According to the volume ratio of deionized water and glycerin in accordance with 100:1, stir with a stirrer at a speed of 300 rpm, and fully mix to obtain a mixed solution of water and glycerin.

[0021] Add 10 grams of mixed grinding powder to 1 liter of mixed solution, add mixed grinding powder with a particle size of 2 to 4 microns to the mixed solution, stir with a stirrer at a speed of 200 rpm, and mix thoroughly to obtain an intermediate liquid.

[0022] Additives are configured according to 60% by mass of deionized water, 12% by mass of triethanolamine, 4% by mass of sodium lauryl sulfate and 10% by mass of acrylic acid polymer.

[0023] The additive is added to the intermediate liquid, wherein the amount of th...

Embodiment 2

[0025] Mix silicon carbide micropowder with a particle size of 2 to 4 microns, corundum micropowder with a particle size of 2 to 4 microns, and diamond micropowder with a particle size of 2 to 4 microns in a ratio of 1:1:10 by mass ratio, using spiral ribbon mixing machine fully mixed to obtain mixed grinding powder;

[0026] According to the volume ratio of deionized water and glycerin in accordance with 100:1, stir with a stirrer at a speed of 300 rpm, and fully mix to obtain a mixed solution of water and glycerin.

[0027] Add 10 grams of mixed grinding powder to 1 liter of mixed solution, add mixed grinding powder with a particle size of 2 to 4 microns to the mixed solution, stir with a stirrer at a speed of 200 rpm, and mix thoroughly to obtain an intermediate liquid.

[0028] Additives are configured according to 60% by mass of deionized water, 12% by mass of triethanolamine, 4% by mass of sodium lauryl sulfate and 10% by mass of acrylic acid polymer.

[0029] The addit...

Embodiment 3

[0031] Silicon carbide powder with a particle size of 2 to 4 microns, corundum powder with a particle size of 2 to 4 microns, boron carbide powder with a particle size of 2 to 4 microns and diamond powder with a particle size of 2 to 4 microns in a mass ratio of 1 : The ratio of 1:1:10 is fully mixed with a spiral ribbon mixer to obtain mixed grinding powder;

[0032] According to the volume ratio of deionized water and glycerin in accordance with 100:1, stir with a stirrer at a speed of 300 rpm, and fully mix to obtain a mixed solution of water and glycerin.

[0033] Add 10 grams of mixed grinding powder to 1 liter of mixed solution, add mixed grinding powder with a particle size of 2 to 4 microns to the mixed solution, stir with a stirrer at a speed of 200 rpm, and mix thoroughly to obtain an intermediate liquid.

[0034] Additives are configured according to 60% by mass of deionized water, 12% by mass of triethanolamine, 4% by mass of sodium lauryl sulfate and 10% by mass o...

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Abstract

The invention relates to a grinding procedure of a sapphire crystal, belonging to the field of a process technology of a crystal material. The invention provides grinding liquid for a high-quality sapphire substrate. The grinding liquid is prepared from diamond micropowder, auxiliary grinding powder, de-ionized water, glycerol and an additive. The grinding liquid prepared by the method is uniform in dispersion and good in chemical stability; the grinding liquid prepared by the method provided by the invention is used for grinding the sapphire crystal so that the grinding efficiency is improved on the precondition that the surface quality of the substrate is guaranteed and the processing cost is effectively reduced. The sapphire substrate grinded by the grinding liquid disclosed by the invention has the advantages of low surface roughness, good flatness, no obvious scratches and easiness for washing, and meets the requirements of industrial production.

Description

technical field [0001] The invention relates to the technical field of processing sapphire crystal materials, in particular to a grinding liquid for a sapphire substrate and a preparation method thereof. Background technique [0002] Sapphire crystal (Al 2 o 3 ) The lattice constant mismatch rate between the C plane and the epitaxially deposited films of III-V and II-VI groups is small, and it meets the high temperature resistance requirements in the GaN epitaxy process, making sapphire single crystal an ultra-high brightness sapphire 1. GaN is the most commonly used substrate material for white LED light emitting materials, and the crystal quality of GaN epitaxy is closely related to the surface processing quality of the sapphire substrate (substrate) used. [0003] At present, the common grinding process uses a single diamond with a high hardness of 3-6 μm as the grinding fluid for the sapphire substrate. Due to the non-uniform diamond particle size of the grinding fluid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304C09G1/02
Inventor 王善建
Owner CHANGZHOU TONGTAI PHOTOELECTRIC
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