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Preparation method of ZnTe/GaAs heteroepitaxial layer

A heteroepitaxial, zinc telluride technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the problems that affect the application, the deviation of the zinc telluride epitaxial layer from the ideal stoichiometry, affect the epitaxy Layer crystal quality and other issues, to achieve the effect of wide application prospects

Inactive Publication Date: 2012-10-03
SHANDONG UNIV
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] 1. The incorporation of impurity atoms (including impurities from substrate atoms and metal-organic sources) during the growth of the epitaxial layer will affect the crystalline quality of the epitaxial layer
[0005] 2. Different ratios of metal-organic sources will cause the zinc telluride epitaxial layer to deviate from the ideal stoichiometric ratio, forming vacancies or interstitial atoms, etc., which will reduce the crystallization quality of the epitaxial layer
[0006] 3. The oxide on the surface of the substrate will form oxygen-bound excitons in the epitaxial layer, and this type of deep-level emission will affect the luminescent properties of the ZnTe epitaxial layer
) discloses a method for growing zinc telluride thin films on gallium arsenide substrates by MOCVD. The zinc telluride thin films prepared by this method have luminescent components with donor-acceptor pairs (DAP) and deep-level oxygen-bound excitons , which will affect its application in light-emitting devices

Method used

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  • Preparation method of ZnTe/GaAs heteroepitaxial layer
  • Preparation method of ZnTe/GaAs heteroepitaxial layer
  • Preparation method of ZnTe/GaAs heteroepitaxial layer

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Embodiment 1

[0043] A method for preparing a zinc telluride / gallium arsenide heteroepitaxial layer, using a metal organic chemical vapor phase epitaxy process, using dimethyl zinc and diethyl tellurium as metal organic sources, using hydrogen as a carrier gas, and using metal organic chemistry Vapor phase epitaxy equipment grows zinc telluride epitaxial layer on gallium arsenide substrate; the process conditions are as follows:

[0044] Reaction chamber background vacuum degree: 1×10 -7 Torr;

[0045] Substrate temperature during growth: 420°C;

[0046] Transport rate of dimethyl zinc: 15μmol / min;

[0047] Transport rate of diethyl tellurium: 15 μmol / min;

[0048] The operation steps of above-mentioned preparation method are as follows:

[0049]1. Cleaning of the GaAs substrate: chemically clean the polished (100) GaAs, ultrasonically clean it in acetone for 5 minutes, and place it in a H 2 SO 4 、H 2 o 2 and H 2 O was etched at 60°C for 20 seconds in a solution composed of a ratio...

Embodiment 2

[0055] The process conditions are as follows:

[0056] Reaction chamber background vacuum degree: 1.2×10 -7 Torr;

[0057] Substrate temperature during growth: 410°C;

[0058] Transport rate of dimethyl zinc: 10 μmol / min;

[0059] Transport rate of diethyl tellurium: 10 μmol / min;

[0060] Growth time: 4 hours;

[0061] ZnTe / GaAs epitaxial layer prepared by MOVPE process, the steps are as follows:

[0062] 1. Cleaning of the GaAs substrate: chemically clean the polished (100) GaAs, ultrasonically clean it in acetone for 5 minutes, and place it in a H 2 SO 4 、H 2 o 2 and H 2 O (according to the ratio of 5:1:1) was etched at 50°C for 20 seconds, and finally rinsed with deionized water;

[0063] 2. Pump the MOVPE equipment reaction chamber into a high vacuum state with a vacuum degree of 1.2×10 -7 Torr, the substrate is heated to 550 ° C for 35 minutes to remove the oxide on the surface of the GaAs substrate;

[0064] 3. Control the substrate temperature at 410°C, adju...

Embodiment 3

[0067] The process conditions are as follows:

[0068] Reaction chamber background vacuum degree: 0.8×10 -7 Torr;

[0069] Substrate temperature during growth: 430°C;

[0070] Transport rate of dimethyl zinc: 30μmol / min;

[0071] Transport rate of diethyl tellurium: 30μmol / min;

[0072] Growth time: 2 hours;

[0073] ZnTe / GaAs epitaxial layer prepared by MOVPE process, the steps are as follows:

[0074] 1. Cleaning of the GaAs substrate: chemically clean the polished (100) GaAs, ultrasonically clean it in acetone for 5 minutes, and place it in a H 2 SO 4 、H 2 o 2 and H 2 O (according to the ratio of 5:1:1) was etched at 70°C for 20 seconds, and finally rinsed with deionized water;

[0075] 2. Pump the MOVPE equipment reaction chamber into a high vacuum state with a vacuum degree of 0.8×10 -7 Torr, the substrate is heated to 600 ° C for 40 minutes to remove the oxide on the surface of the GaAs substrate;

[0076] 3. Control the substrate temperature at 430°C, adjust...

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Abstract

The invention relates to a preparation method of a ZnTe / GaAs heteroepitaxial layer, belonging to the technical field of semiconductor material preparation. According to the preparation method, the ZnTe epitaxial layer grows on a GaAs substrate by adopting an organometallic chemical vapor phase epitaxy process, taking dimethyl zinc and diethyl tellurium as organometallic sources and hydrogen as a carrier gas and by using organometallic chemical vapor phase epitaxy equipment. The ZnTe / GaAs epitaxial layer prepared by using the preparation method has narrow band edge bound exciton peak and larger luminous intensity and does not generate deep energy level emission and dislocation-related Y rays, and all the results indicate that the epitaxial layer has favorable crystal quality. The ZnTe / GaAs epitaxial layer prepared by using the preparation method can be used for preparation of photoelectric devices, such as green LEDs and Terahertz emitters, can realize integration with a GaAs-based device and has wide application prospect.

Description

technical field [0001] The invention relates to a method for preparing a zinc telluride / gallium arsenide heterogeneous epitaxial layer, in particular to a method for preparing a high-quality zinc telluride / gallium arsenide heterogeneous epitaxial layer by controlling the growth temperature. Background technique [0002] Zinc telluride (ZnTe) is an important II-IV compound semiconductor material. ZnTe has a direct bandgap and a large forbidden band width (2.26eV at room temperature), so it has a good application prospect in optoelectronic devices such as green LEDs, terahertz detectors, solar cells and optical waveguides. Gallium arsenide (GaAs) is an important III-V semiconductor material. GaAs has high saturation electron velocity and high electron mobility, and is a good conductor of heat and electricity, so it has a wide range of applications in communication systems and optoelectronic devices. If ZnTe can be epitaxially grown on GaAs, device integration can be realized...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 冀子武黄树来赵雪琴张磊郭其新徐现刚
Owner SHANDONG UNIV
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