White light organic electroluminescent device and preparation method of white light organic electroluminescent device
An electroluminescent device, white light technology, applied in the fields of electro-solid devices, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc. Good and efficient effect
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Embodiment 1
[0037] Iridium complexes of phenylquinoline ligands (BDHBA) 2 Ir (acac) and preparation thereof, comprises the following steps:
[0038] 1) Preparation of phenylquinoline ligands
[0039] Add 26.0g of zinc powder and 200mL of anhydrous THF into a 500mL three-necked flask, under nitrogen protection, stir at room temperature, and slowly add 22mL of TiCl 4 , Heated to reflux for 3h, cooled to room temperature to obtain black low-valent titanium reagent.
[0040] Dissolve 15mL of concentrated sulfuric acid and 41.4g of 5-tert-butoxy-2-nitrobenzaldehyde in 400mL of glacial acetic acid, cool down to 0°C, slowly add 29.2g of tetralone dropwise, react at room temperature for 3 hours, and stop the reaction. Stand still for 48 hours, filter, and recrystallize the filter cake with 90% ethanol to obtain the intermediate product (3).
[0041] The intermediate product (3) dissolved in 200mL THF was slowly added dropwise to the low-valent titanium reagent, and reacted overnight at room temp...
Embodiment 2
[0048] Reference attached figure 2 , according to the first white electroluminescent device of the present invention has the following structure:
[0049] ITO / NPB / TCTA / FIrPic:CzSi / (BDHBA) 2 Ir(acac):CBP / TAZ / LiF / Al
[0050] at 10 -4 Under the vacuum degree of Pa, the material is evaporated on a resistance of 10Ωsquare by vacuum evaporation method. -1 Made of ITO glass. Wherein the hole transport layer of the device is followed by NPB (film thickness is 30nm), TCTA (film thickness is 20nm); double light-emitting layer is followed by FIrPic:CzSi layer (doping concentration is 7%, film thickness is 20nm) and (BDHBA ) 2 Ir(acac): CBP layer (doping concentration is 5%, film thickness is 100nm); electron transport layer is TAZ (film thickness is 50nm); electron injection layer is LiF (film thickness is 1nm); cathode is Al (100nm ); the evaporation rate of organic materials is 0.1~0.2nm s -1 , the cathode LiF evaporation rate is 0.01nm s -1 , the evaporation rate of Al is 0.1...
Embodiment 3
[0053] Reference attached image 3 , according to the second white electroluminescent device of the present invention is the following structure:
[0054] ITO / NPB / TCTA / (BDHBA) 2 Ir(acac):CBP / FIrPic:CzSi / (BDHBA) 2 Ir(acac):CBP / TAZ / LiF / Al
[0055] at 10 -4 Under the vacuum degree of Pa, the material is evaporated on a resistance of 10Ωsquare by vacuum evaporation method. -1 Made of ITO glass. Among them, the hole transport layer of the device is NPB (film thickness is 30nm), TCTA (film thickness is 20nm); the three light-emitting layers are (BDHBA) 2 Ir(acac):CBP layer (doping concentration is 4%, film thickness is 3nm), FIrPic:CzSi layer (doping concentration is 9%, film thickness is 20nm) and (BDHBA) 2 Ir(acac): CBP layer (doping concentration is 3%, film thickness is 10nm); electron transport layer is TAZ (film thickness is 50nm); electron injection layer is LiF (film thickness is 1nm); cathode is Al (100nm ); the evaporation rate of organic materials is 0.1~0.2nm s -...
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