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Up-and-down-conversion luminescent high-transmittance amorphous fluoride film and preparation method thereof

A fluoride, high-transparency technology, applied in chemical instruments and methods, photovoltaic power generation, luminescent materials, etc., can solve problems such as low transmittance, and achieve the effects of high transmittance, uniform film surface, and simple composition.

Active Publication Date: 2014-02-26
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Comparing the above materials, it is found that the transmittance is low. Among them, the fluoride light-converting film prepared by pulsed laser deposition is due to the formation of a large number of grain boundaries with strong scattering and low transmittance.

Method used

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  • Up-and-down-conversion luminescent high-transmittance amorphous fluoride film and preparation method thereof
  • Up-and-down-conversion luminescent high-transmittance amorphous fluoride film and preparation method thereof
  • Up-and-down-conversion luminescent high-transmittance amorphous fluoride film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) In YbF 3 ErF is added to the powder 3 Powder, of which ErF 3 The powder mole fraction is 5%, then ball-milled and mixed, dried and then pressed into tablets, and then calcined at 600°C for 8 hours by carbon coating to make a ceramic target. XRD pattern of its ceramic target (see figure 1 ) Basically in line with YbF 3 PDF 34-0102 Diffraction standard spectrum.

[0033] (2) YbF prepared by the above method 3 :Er ceramic target, using electron beam deposition method: use silicon wafer as substrate, under vacuum conditions, substrate temperature is 500℃, target spacing is 32cm, deposition beam current is 4, deposition time is 15min, and YbF is obtained 3 film.

Embodiment 2

[0035] (1) In YbF 3 ErF is added to the powder 3 Powder, of which ErF 3 The molar fraction of the powder is 5%, then ball-milled and mixed, dried and then pressed into tablets, and calcined at 650°C for 8 hours by carbon coating method to make a ceramic target.

[0036] (2) YbF prepared by the above method 3 :Er ceramic target, using electron beam deposition method: using silicon wafer as substrate, under vacuum conditions, substrate temperature is 500℃, target spacing is 32cm, deposition beam current is 3, deposition time is 60min, and YbF is obtained 3 Film, see the XRD pattern figure 2 .

Embodiment 3

[0038] (1) In YbF 3 ErF is added to the powder 3 Powder, of which ErF 3 The molar fraction of the powder is 10%, then ball-milled and mixed, dried and then pressed into tablets, and calcined at 750°C for 8 hours by carbon coating, and then fired into a ceramic target. See its XRD pattern image 3 .

[0039] (2) YbF prepared by the above method 3 :Er ceramic target, using electron beam deposition method: use silicon wafer as substrate, under vacuum condition, substrate temperature is 500℃, target spacing is 32cm, deposition beam current is 5, deposition time is 60min, and YbF is obtained 3 Film, see the XRD pattern Figure 4 . Use FLS920 fluorescence spectrometer to measure the room temperature emission spectrum under 378nm excitation conditions. For the emission spectrum, see Figure 5 ;Luminescence spectrum under 980nm excitation see Image 6 .

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Abstract

The invention discloses an up-and-down-conversion luminescent high-transmittance amorphous fluoride film and a preparation method thereof, and belongs to the field of solid luminescent materials. The film comprises YbF3 and ErF3, and the molar fraction of the ErF3 is 0.5%-15%. The preparation method includes: adding YbF3 powder into ErF3 powder for ball-milling mixing, drying prior to tabletting, and calcining for 6h-8h at the temperature of 600-750 DEG C by a carbon coating method so that a ceramic target is calcined; and using an electron beam deposition method which includes that a silicon wafer and quartz are used as a substrate, and under the vacuum condition, the substrate temperature ranges from 400 DEG C to 500 DEG C, the target spacing ranges from 25cm to 32cm, the deposition beam current ranges from 3mA to 6mA, and the deposition time ranges from 15min to 90min. The amorphous film achieves combination of up-conversion and down-conversion mechanisms and is capable of effectively converting an ultraviolet wave band (300nm-400nm) and an infrared wave band (around 980nm) to a visible light wave band (around 656nm), and the transmittance of the film is averagely higher than 95% so that the film is hopefully applied to solar cells to improve photoelectric efficiency of the same.

Description

Technical field [0001] The invention belongs to the field of rare earth luminescent materials, and particularly relates to a high-transmittance amorphous fluoride film with up and down light conversion and a preparation method thereof. Background technique [0002] The research of solar cell materials has attracted great attention and attention due to the increasingly urgent energy problem. However, due to the restriction of the semiconductor band gap, various solar cells can only achieve high-efficiency photoelectric conversion for light in their specific spectral ranges. For example, for amorphous silicon (Eg=1.75eV) solar cells, the best spectral response range is 500nm~600nm. When the light wavelength extends to the longwave direction and the shortwave direction, the response intensity to light drops rapidly. [0003] For this reason, many people are looking for ways to expand the spectral response range of the battery to increase its conversion efficiency, but they all need to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/85C23C14/06C23C14/30H01L31/055
CPCY02E10/50Y02E10/52
Inventor 王如志张影曲铭浩严辉张铭王波宋雪梅朱满康侯育冬刘晶冰汪浩
Owner BEIJING UNIV OF TECH
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