Single-sided electrode polycrystalline silicon thin film solar cell and manufacturing method thereof

A polysilicon thin film, solar cell technology, applied in the direction of circuits, electrical components, final product manufacturing, etc., can solve the problem of difficult to achieve the structure size, and achieve the effect of easy mass production, material saving, and thickness reduction.

Inactive Publication Date: 2012-10-17
刘莹
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the brittleness of silicon wafers, it is not easy to achieve the optimal structure size in mass production considering the yield rate of products

Method used

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  • Single-sided electrode polycrystalline silicon thin film solar cell and manufacturing method thereof
  • Single-sided electrode polycrystalline silicon thin film solar cell and manufacturing method thereof
  • Single-sided electrode polycrystalline silicon thin film solar cell and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Embodiment one: as attached Figure 1 , Figure II As shown, a piece of ultra-clear glass of 300×300×3.0 mm is selected as the single-side electrode polysilicon thin-film solar cell substrate 6 . A layer of about 20nm SiO is placed on the surface of ultra-clear glass 2 Make the barrier and passivation composite film 4, and set the textured structure 5 at the interface where the film contacts with the ultra-clear glass. An N-type polysilicon film 3 with a thickness of 15 μm is provided on the composite film. Set P-type comb-like doping 2 inside the polysilicon film to form a PN junction 21 with a doping depth of 0.5 μm and a width of 0.5 mm, and set comb-like aluminum electrodes 11 and 12 at the comb-like doping position and the undoped position respectively , as the negative and positive electrodes of the solar cell, the width of the electrodes is determined according to the width of the PN junction to ensure that the positive and negative electrodes are not in contac...

Embodiment 2

[0042]Embodiment 2: A piece of ultra-clear glass with a size of 300×300×3.0 mm is selected as the single-side electrode polysilicon thin-film solar cell substrate. Make the surface of the glass into a suede structure, then set a layer of about 20nm SiNX on the surface of the ultra-clear glass as a barrier and passivation composite film, and set a layer of P-type polysilicon film with a thickness of 10 μm on the composite film. N-type grid-like doping 2 is set inside the crystalline silicon film to form a PN junction with a doping depth of 1 μm and a width of 0.5 mm. Grid-like silver-aluminum electrodes are respectively set at the grid-like doping position and the undoped position to serve as solar energy. For the positive and negative electrodes of the battery, the width of the electrodes is determined according to the width of the PN junction to ensure that the positive and negative electrodes are not in contact.

Embodiment 3

[0043] Embodiment three: as attached Figure three , attached Figure four As shown, a piece of ultra-clear glass with a size of 100×100×3.0 mm is selected as the single-side electrode polysilicon thin-film solar cell substrate 6 . Then set a layer of about 30nm SiN on the surface of the ultra-clear glass x +SiO2 2 A barrier and passivation composite film 4 is made, and a textured structure 5 is provided at the joint of the interface. A layer of N-type polycrystalline silicon film 3 with a thickness of 10 μm and a low doping concentration of 10 μm is provided above the composite film, and then a P-type grid-shaped doping is arranged on it to form a grid-shaped PN junction 22 with a doping depth of 1 μm and a width of 0.05 mm. . Grid-shaped silver electrodes 71 and 72 are respectively arranged at the grid-shaped doped position and the undoped position, as the negative conductive electrode and the positive conductive electrode of the solar cell, and a layer of thickness less...

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Abstract

The invention discloses a single-sided electrode polycrystalline silicon thin film solar cell and a manufacturing method thereof. The structure of the solar cell is characterized in that an ultra-white glass is taken as a substrate, a layer of thin film which plays a part in blocking and passivation is arranged on the substrate, a layer of polycrystalline silicon thin film is arranged on the aforementioned thin film, grate-like or comb-like PN junctions are arranged on the polycrystalline silicon thin film, and extraction electrodes having a shape which is adapted to the shape of the PN junctions are arranged at top. The manufacturing steps comprises: cleaning the glass substrate, and planting the blocking and passivation layer thin film by using a vacuum plating method and planting the polycrystalline silicon thin film by using a liquid phase epitaxial method or the vacuum plating method on the glass substrate successively; then preparing the grate-like or comb-like PN junctions on the polycrystalline silicon thin film through thermal diffusion, ion implantation, laser doping and other methods; and finally printing the extraction electrodes, and performing sintering to complete the process. The PN junctions are in a grate-like or comb-like arrangement, so the effective PN junction length is increased compared with conventional structures, and conversion efficiency is improved. At the same time, the polycrystalline silicon layer is easily to be thinned, and mass production is easily realized.

Description

1. Technical field [0001] The invention relates to the field of crystalline silicon thin-film solar cells, in particular to a structure and a manufacturing method of a single-side electrode polycrystalline silicon thin-film solar cell. 2. Background technology [0002] As a clean energy without any pollution, the possibility of using solar power as one of the main sources of power supply has increasingly attracted people's attention. The key to solving this technology lies in the reduction of solar cell production costs and the improvement of conversion efficiency. [0003] Relevant technicians in the photovoltaic industry have made a lot of technological innovations and improvements on the basis of the traditional structure in order to improve the conversion efficiency of solar cells. Such as an amorphous silicon thin-film solar cell with a structure including a surface layer, a buffer layer, a light absorption region containing at least one P-N junction, a transition laye...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0352H01L31/18
CPCY02P70/50
Inventor 刘莹
Owner 刘莹
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