Method and device for preparing solar cell surface gate electrodes by using light induction plating

Abstract

The invention discloses a method and a device for preparing grid electrodes on the surface of solar cells by light-induced electroplating. The method of the invention includes silicon chip pretreatment, electroplating state setting, light-shielding plate setting, light-induced electroplating process, and metal ions are directly deposited on the surface of the silicon chip by light-induced electroplating to form grid electrodes. The device of the present invention includes an electroplating pool, a light source, a wire, and a counter electrode. The bottom of the electroplating pool is provided with a light source, and the two sides of the electroplating pool are provided with counter electrodes. The counter electrode is connected to the back electrode of the silicon wafer. The bottom or lower side of the tank is provided with a drain and / or heating device, and the upper part of the electroplating tank is provided with a grid-shaped shading plate and placed under the surface of the N-region of the silicon wafer. The invention realizes the direct electroplating preparation of the grid-shaped electrode on the silicon wafer of the solar cell, without the need for slotting and pre-setting the seed layer process in the traditional method, reduces the production cost, and overcomes the small aspect ratio and contact resistance of the existing screen printing technology And the shortcomings of high bulk resistance and low efficiency.

Description

technical field [0001] The invention belongs to the technical field of electrochemistry, further belongs to the technical field of solar cell processing electrochemistry, and in particular relates to a method and a device for preparing solar cell surface grid electrodes by light-induced electroplating. Background technique [0002] Since the successful development of silicon PN junction solar cells by Chapin, Fuller and Pearson in 1954, devices using the p-n junction photovoltaic effect have been improved and evolved for more than half a century, and have developed into a class of solar cells with various geometric structures and corresponding manufacturing processes. However, crystalline silicon solar cells are still the mainstream of the photovoltaic industry today. [0003] The grid-shaped electrode of the crystalline silicon solar cell is responsible for collecting photo-generated electrons. Since it is on the light-receiving surface, it is made into a grid-like structur...

AI Technical Summary

Problems solved by technology

Ronald H. Micheels and others achieved a 10μm Cu gate coating on pure P-type silicon, but this method is not suitable for solar cell technology

There are two reasons: 1. The semiconductor solution junction electric field caused by the energy band structure of silicon makes it possible to achieve direct light-induced electroplating on P-type silicon at present, while the mainstream crystalline silicon solar cells in the market are mainly based on N-type 2. For a small number of solar cells (N-type solar cells) with a P-type surface as the light-receiving surface in the market, due to the existence of a PN junction, it will form a reverse power supply (that is, to the preset The electrode surface provides holes), and it is also difficult to achieve direct light-induced electroplating

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