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Llight-absorbing material and photoelectric conversion element using same

A technology for photoelectric conversion elements and light absorbing materials, applied in electrical components, photovoltaic power generation, circuits, etc., can solve problems such as technologies that have not yet been found to be practical, and achieve the effects of strong mechanical properties, stable chemical properties, and small dark current values.

Inactive Publication Date: 2012-11-21
NAT UNIV KYOTO INST OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] As mentioned above, until now, experiments to improve the conversion efficiency of solar cells by using light in the unused wavelength region of sunlight have been carried out, but no practical technology has been found. This is the current situation.

Method used

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  • Llight-absorbing material and photoelectric conversion element using same
  • Llight-absorbing material and photoelectric conversion element using same
  • Llight-absorbing material and photoelectric conversion element using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0227] Embodiment 1 ((Al 1-y Ga y ) 1-x T x Fabrication of N film)

[0228] use Figure 19 The sputtering setup shown was fabricated (Al 1-y Ga y ) 1-x T x N film. This apparatus has a vacuum chamber 72, and a gas introduction nozzle 76 and an exhaust port 77 for introducing sputtering gas are provided on the side wall thereof. As the sputtering gas, a mixed gas of argon and nitrogen was used. In the vacuum chamber 72 , a target 74 is provided on the cathode, and a plurality of substrates 71 are provided on the substrate holder 70 facing it. As the target, a mixed crystal having an Al / Ga ratio of 0.1 / 0.9 was used. Chips of any one of V, Cr, Mn, Co, and Ni are provided on the target as chips of 3d transition metals (not shown). The 3d transition metal chip is sputtered with (AlGa) N at the same time, and reacts with the nitrogen contained in the sputtering gas, and the Al and Ga elements in the (AlGa) N film made by the 3d transition metal are replaced. The amount ...

Embodiment 2

[0240] Example 2 (production of photoelectric conversion element)

[0241] In Example 1 (Al 0.1 Ga 0.9 ) 0.90 Ni 0.10 In the sputtering film formation of the N layer, a part of the surface of the p-GaN substrate 2 preformed on the single crystal sapphire 1 set on the substrate holder is covered with a metal mask, and the sputtered film is formed on the substrate. Non-film department. After sputtering film formation, in (Al 0.1 Ga 0.9 ) 0.90 Ni 0.10 Part of the surface of the n-layer 3 and the non-film-forming part were evaporated to form an n-layer electrode 4 and a p-layer electrode 5, respectively, to fabricate a photoelectric conversion element.

[0242] Figure 26 Shown is the voltage-current when irradiating AM1.5 light energy (equivalent to sunlight on the ground) and when not irradiating a single-cell structure test piece of a pn-type photoelectric conversion element with an AlGaNiN film formed on p-GaN characteristic. It does not generate electricity when it...

Embodiment 3

[0243] Example 3 (Membrane Formation by MBE Method)

[0244] A sapphire substrate was placed on a substrate holder in a vacuum chamber equipped with a Ga and Mn vapor deposition source connected to a gas introduction nozzle for introducing ammonia gas. There is a heater on the back of the substrate holder. Turn on the heater to generate heat, heat the sapphire substrate to 950°C for purification, then lower the temperature of the sapphire substrate to 550°C, spray ammonia gas from the gas nozzle, blow it to the sapphire substrate, and place the first evaporation source The first metal material is heated to generate a metal molecular beam with Ga as the main component, which is irradiated on the surface of the sapphire substrate to form a buffer layer composed of a GaN thin film.

[0245] After the buffer layer is formed to a specified film thickness (0.2μm), the sapphire substrate is raised to 720°C, and the gas containing nitrogen atoms (here, ammonia gas) is blown directly ...

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PUM

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Abstract

The invention provides a new light-absorbing material that can increase the conversion efficiency of a solar cell. Further disclosed is a photoelectric conversion element using same. The light-absorbing material comprises a nitride compound semiconductor-which is a compound semiconductor represented by Al1-yGayN (0 <= y <= 1) of which a portion of the Al and / or Ga has been replaced by a 3d transition metal-has at least one impurity band, and has an optical absorption coefficient of at least 1000 cm-1 in the entire wavelength region that is between 300 nm and 1500 nm, inclusive.

Description

technical field [0001] The present invention relates to a light-absorbing material having a multi-band structure and a photoelectric conversion element using the same. Background technique [0002] In recent years, CO 2 Against the background of global environmental issues such as emission issues and energy cost issues such as rising crude oil prices, expectations for solar cells utilizing clean and inexhaustible sunlight are rising. At present, the solar cell mainly used is a single-junction type solar cell composed of a pn junction element using single crystal silicon or polycrystalline silicon as a semiconductor. The theoretical conversion efficiency (the ratio of incident energy that can be converted into electrical energy) of this unijunction solar cell can be said to be around 28%, but at a practical level, for example, in monocrystalline silicon solar cells, it is usually 15 to 17% . [0003] Semiconductors such as silicon used in solar cells have an inherent band ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04
CPCH01L31/1848H01L31/1852Y02E10/544H01L31/1035H01L31/03044Y02E10/548H01L31/04
Inventor 园田早纪加藤纯一川崎修竹永睦生
Owner NAT UNIV KYOTO INST OF TECH
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