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Method for preparing aluminum nitride single crystal material

A single crystal material, aluminum nitride technology, applied in polycrystalline material growth, chemical instruments and methods, single crystal growth, etc., can solve problems such as bending and cracking of high-density dislocation films that are difficult to overcome, and achieve good practicality Effects on Value and Marketing Prospects

Inactive Publication Date: 2012-12-19
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

Its disadvantages are: 1) It is difficult to overcome the problems of high-density dislocations (109-10 / cm2), film bending and cracking caused by stress caused by heteroepitaxial
Its disadvantages are: 1) It is difficult to obtain materials with smooth surface and high crystal quality by direct heteroepitaxial growth
Its disadvantages are: 1) It is easy to obtain polycrystalline or large grain materials (grain scale millimeter scale or smaller) without seed crystal preparation and growth

Method used

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  • Method for preparing aluminum nitride single crystal material

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preparation example Construction

[0025] see figure 1 As shown, the present invention provides a method for preparing an aluminum nitride single crystal material, which is characterized in that it comprises the following steps:

[0026] Step 1: Put a substrate 1 into the growth chamber of metal organic chemical vapor deposition-halide vapor phase epitaxy compound process equipment, the substrate 1 is a high melting point heterogeneous single crystal substrate, its melting point is higher than 1300°C and Sapphire, silicon carbide or gallium nitride materials that have a good lattice matching relationship with aluminum nitride;

[0027] Step 2: Prepare a III-nitride nucleation layer 2 on the substrate 1 by metal-organic chemical vapor deposition process, the III-nitride nucleation layer 2 is GaN, AlN or AlGaN material, and the preparation temperature is 300 to 700°C, with a thickness of 5 to 500nm;

[0028] Step 3: heating the substrate 1 to a higher temperature, and preparing a III-nitride crystalline layer 3...

Embodiment 1

[0046] The process of preparing aluminum nitride (AlN) thick film single crystal material and aluminum nitride (AlN) bulk single crystal material by using sapphire (a-Al2O3) material as heterogeneous single crystal substrate is as follows:

[0047] Step 1: Place a 2 inch diameter a-Al 2 o 3 The single crystal substrate material 1 is placed in the growth chamber of the MOCVD-HVPE compound process equipment;

[0048] Step 2: Prepare a 30nm-thick GaN low-temperature nucleation layer 2 on the sapphire single crystal substrate material at a low temperature at a substrate heating temperature of 550° C. by using a gold MOCVD process;

[0049] Step 3: raising the substrate heating temperature to 1050° C., and preparing a 500 nm thick GaN high-temperature crystallization layer 3 on the GaN low-temperature nucleation layer 2 at high temperature by using the MOCVD process;

[0050] Step 4: Lower the heating temperature of the substrate to 600°C, and prepare a 50nm-thick TiN stress-conf...

Embodiment 2

[0061] The process flow of using silicon carbide (6H-SiC) material as heterogeneous single crystal substrate to prepare aluminum nitride (AlN) thick film single crystal material and AlN bulk single crystal material is as follows:

[0062] Step 1: Put the 6H-SiC single crystal substrate material 1 with a diameter of 2 inches and a thickness of 300 microns into the growth chamber of the MOCVD-HVPE composite process equipment;

[0063] Step 2: Prepare a 20nm-thick AlN low-temperature nucleation layer 2 on a 6H-SiC single crystal substrate material at a low temperature with a substrate heating temperature of 650° C. by MOCVD process;

[0064] Step 3: raising the heating temperature of the substrate to 1300°C, and preparing a 300nm thick AlN high-temperature crystallization layer 3 on the AlN low-temperature nucleation layer 2 at high temperature by MOCVD process;

[0065] Step 4: Lower the heating temperature of the substrate to 650°C, and prepare a 50nm-thick HfN stress-consisten...

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Abstract

The invention relates to a method for preparing an aluminum nitride single crystal material, comprising the following steps: preparing a III-nitride nucleation layer on a substrate; preparing a III-nitride crystallization layer on the III-nitride nucleation layer; preparing a stress covariation layer on the III-nitride crystallization layer; preparing a III-nitride self-decomposing decoupling layer on the stress covariation layer; preparing a first III-nitride template layer on the III-nitride self-decomposing decoupling layer; preparing a second III-nitride template layer on the first III-nitride template layer; preparing an aluminum nitride thick-film monocrystalline material layer on the second III-nitride template layer; and preparing an aluminum nitride single crystal wafer substrate material by adopting an intermediate process. The method can be used for providing low-cost large-size aluminum nitride single crystal wafer substrate material to study and produce ultraviolet and deep-ultraviolet semiconductor optoelectronic devices, thereby having very good practical value and marketing prospect.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor single crystal material, in particular to a method for preparing an aluminum nitride single crystal material. Background technique [0002] With the widespread application and promotion of the third-generation semiconductor gallium nitride (GaN) materials in the field of optoelectronic devices, the research and development of ultra-wide bandgap semiconductor materials aluminum nitride (AlN) has been greatly promoted. Since NTT Corporation of Japan developed the first AlN-based deep ultraviolet (wavelength 210nm) light-emitting diode (LED) in 2006, short-wavelength ultraviolet and deep ultraviolet optoelectronic devices based on AlN and high Al composition AlGaN materials have become new research hotspots in the field of semiconductors. . However, if similar GaN-based optoelectronic devices are used for epitaxial preparation of heterogeneous substrates (such as sapphire, silicon carbide an...

Claims

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Application Information

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IPC IPC(8): C30B29/38C30B23/00C30B25/16
Inventor 杨少延魏鸿源焦春美刘祥林
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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