Packaging method of quantum effect photoelectric detector and readout integrated circuit

Abstract

The invention discloses a packaging method of a quantum effect photoelectric detector and a readout integrated circuit. The method is characterized in that the lead design and the circuit board manufacturing of a photoelectric detector array and a readout integrated circuit are performed on the front and back faces of a base board by adopting the POWREPCB or integrated circuit design software, the detector array and the readout integrated circuit are interconnected via metal micropores on the base plate, and then, the detector array and the readout integrated circuit are packaged in a tube case. Compared with the prior art, the package of the quantum effect photoelectric detector and the readout integrated circuit has lower resistance, the inductance is reduced, signal loss caused by signal delay and packaging parasitic parameters is reduced, the anti-interference property is good, the reliability is high, the noise and the manufacturing cost are further reduced, and the wide application of the high-sensitivity new-principle photoelectric detector is beneficially promoted.

Description

technical field [0001] The invention relates to the technical field of circuit design and optoelectronic integration, in particular to a packaging method for a quantum effect photodetection array and a readout integrated circuit used in a portable spectrometer. Background technique [0002] Compound semiconductor quantum effect optoelectronic devices have higher sensitivity and response speed than silicon CCD and CMOS image sensors due to the material characteristics of high electron mobility. The material device structure and spectral response are precisely controllable, and the wavelength application range is from ultraviolet to far infrared. Even reaching the TH range, it has very good application prospects in commercial, industrial and military fields such as meteorology, astronomy, earth observation, night vision, navigation, aircraft control, and early warning systems. The demand for spectrometers for a large number of civilian applications such as food safety, environ...

AI Technical Summary

Problems solved by technology

For the infrared photodetection array, due to the small absorption coefficient of the substrate material for infrared radiation, the detection array and the readout circuit are generally packaged face-to-face and face-to-face by using a thinner substrate combined with reverse welding technology, or the detection array is packaged by a hybrid packaging method. Side by side with the readout circuit and packaged on a ceramic substrate with good thermal conductivity such as silicon or gemstones with the photosensitive side facing up, this package is expensive and has relatively high requirements for equipment and technology

[0003] The packaging technology of the existing quantum effect photodetection array has high sensitivity to the new principle quantum effect photodetection array with a response wavelength in the range of 400~1000nm, especially the newly developed detection array with high sensitivity. The substrate is sensitive to near ultraviolet, visible light and The radiation absorption in the near-infrared band is very strong, so it is difficult to use reverse soldering packaging