Self-assembly preparation method for nano-pillar array compound semiconductor device

Abstract

A self-assembly preparation method for a nano-pillar array compound semiconductor device comprises the following steps: (1) pumping a layer of metal source reactant into the surface of a conductive substrate in advance; (2) annealing to form metal island particles; (3) pumping in III and V reactants for epitaxial growth of a semiconductor nano-pillar array; (4) accelerating lateral growth of semiconductor nano-pillars and doping an N-type impurity into a source substance to form a semiconductor nano-pillar array of which the surface is N-type; (5) depositing an insulating layer on the surfaces of the nano-pillars and the exposed surface of the conductive substrate among the nano-pillars and etching the insulating layer on the side walls of the nano-pillars through an etching liquid; (6) forming nano-pillar array devices on the surfaces of the nano-pillars; (7) filling a conductive substance among the nano-pillar arrays to form an electrode layer; and (8) manufacturing P-type electrodes in the electrode layer and manufacturing N-type electrodes on the conductive substrate.

Description

technical field [0001] The invention relates to the preparation of a nano-column array compound semiconductor device, in particular to a method for growing high-quality gallium nitride light-emitting diodes and gallium nitride lasers by vapor phase epitaxy. Background technique [0002] The wide bandgap material represented by gallium nitride (GaN) is the third-generation semiconductor material after Si and GaAs, and is used to make electronic devices such as light-emitting diodes, lasers, detectors, and high-frequency high-power transistors. [0003] Since high-quality commercial bulk GaN crystals are not yet available, heterogeneous substrates are generally used to epitaxially obtain GaN thin films. However, there is a large lattice mismatch between GaN and sapphire substrate (or Si substrate), resulting in dislocations in the epitaxial layer, which will spread and pass through the entire epitaxial layer, limiting the performance of GaN devices improvement. In order to r...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the defects of the above-mentioned traditional existing methods, and solve the problem of excessive dislocation density generated in the process of growing semiconductor devices by traditional methods

In addition, the device design of the nanopillar array can solve the defect that the light-emitting area of ​​the semiconductor device is too small, and improve the utilization rate of light.

Images