Thin film transistor and manufacturing method thereof

Abstract

The invention provides a method for manufacturing a thin-film transistor and the thin-film transistor manufactured thereby. The method comprises the following steps: step 1, providing a substrate; step 2, forming a first metal layer on the substrate, and forming a gate through a photo-masking procedure; step 3, forming a gate insulating layer on the gate; step 4, forming an oxide semiconductor layer on the gate insulating layer, forming a second metal layer on the oxide semiconductor layer, wherein the second metal layer comprises a titanium layer formed on the oxide semiconductor layer, and a copper layer formed on the titanium layer, and forming a data line and a source / drain electrode through a photo-masking procedure; and step 5, forming a transparent conductive layer on the second metal layer, and patterning the transparent conductive layer through a photo-masking procedure to obtain the thin-film transistor.

Description

technical field [0001] The invention relates to the technical field of flat panel display devices, in particular to a method for manufacturing a thin film transistor and the manufactured thin film transistor. Background technique [0002] A liquid crystal display (LCD, Liquid Crystal Display) has many advantages such as a thin body, power saving, and no radiation, and has been widely used. Most of the liquid crystal display devices currently on the market are backlight liquid crystal display devices, which include a liquid crystal display panel and a backlight module. The working principle of the liquid crystal display panel is to place liquid crystal molecules between two parallel glass substrates, and control the liquid crystal molecules to change direction through whether the glass substrates are energized or not, and refract the light from the backlight module to produce a picture. [0003] Usually, the liquid crystal display panel consists of a color filter (CF, Color ...

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Problems solved by technology

[0004] The thin film transistor substrate generally includes a glass substrate and a thin film transistor formed on the glass substrate. The thin film transistor mainly has three structures, namely a co-planar structure, an island-stop structure and a backside structure. Channel (BCE) structure, while the existing oxide thin film transistors are mainly based on the coplanar structure and the etch stop layer structure, because the back channel structure will cause damage to the oxide semiconductor layer during the process and affect its electrical properties.

[0005] see figure 1 , is a structural schematic diagram of an existing back channel thin film transistor formed on a glass substrate 100 through five photomask processes, which includes: a gate 101 formed on the glass substrate 100, a gate insulating layer 103 formed on the The oxide semiconductor layer 105 on the gate insulating layer 103 and the source / drain electrodes 107 formed on the oxide semiconductor layer 105, the oxide semiconductor layer 105 contains zinc oxide (ZnO x ), tin oxide (SnO x ), indium oxide (InO x ) and gallium oxide (GaO x ), which is generally selected from Indium Gallium Zinc Oxide (IGZO); the source / drain 107 is generally formed on the oxide semiconductor layer 105 by a sputtering (sputtering) process in order to form aluminum (Al ) layer and molybdenum (Mo) layer, and then formed by processes such as photoresist material coating, exposure, development, etching and removal of photoresist material. The etching process is required when processing the aluminum layer. The etching solution is generally phosphoric acid (H 3 PO 4 ) and nitric acid (HNO 3 ), and the mixed acid of phosphoric acid and nitric acid will react with the oxide semiconductor layer 105, and cause the oxide semiconductor layer 105 to be etched, thereby affecting the electrical properties of the thin film transistor and reducing the quality of the thin film transistor

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