Preparation method of metal doped hydrogen-free diamond-like carbon film

A technology of metal doping and diamond film, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of reducing the internal stress of the film, poor bonding force of the film base, and poor thermal stability, etc. Strong operability, high film hardness, and good repeatability

Inactive Publication Date: 2013-03-13
CHINA UNIV OF GEOSCIENCES (BEIJING)
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AI Technical Summary

Problems solved by technology

It uses ion beam assisted deposition technology, uses high-purity metal targets and graphite targets, and sputters target materials under the auxiliary bombardment of auxiliary sources to prepare metal-doped hydrogen-free diamond-like films, which not only maintains the high hardness and The characteristics of low friction c

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0021] 1. Clean the stainless steel sheet ultrasonically, and after drying, fix it on the workpiece rack in the vacuum chamber of the ion beam assisted deposition coating equipment and vacuumize it, and pre-vacuumize it to 2.0×10 -4 Pa;

[0022] 2. Connect the sputtering ion source and the auxiliary source gas source, pass the argon gas into the vacuum chamber, and keep the air pressure lower than 1.3×10 -2 Pa, using an ion beam with a voltage of 2.7KV and a current of 100mA to bombard the target; using a voltage of 0.2KV and a beam of 100mA to bombard and clean the sample, and the bombardment time is 10min;

[0023] 3. The sputtering source uses an ion beam with a voltage of 2.7KV and an ion beam current of 100mA to bombard the graphite target; an ion beam with a voltage of 2.7KV and a beam current of 25mA bombards the tungsten target, and the auxiliary source uses a voltage of 0.2KV and a beam current of 20mA on the surface of the workpiece Deposit hydrogen-free diamond-lik...

Embodiment 2

[0027] 1. Ultrasonic clean the single crystal silicon wafer, after drying, fix it on the workpiece rack in the vacuum chamber of the ion beam assisted deposition coating equipment and vacuumize it, and pre-vacuumize it to 2.0×10 -4 Pa;

[0028] 2. Connect the sputtering ion source and the auxiliary source gas source, pass the argon gas into the vacuum chamber, and keep the air pressure lower than 1.5×10 -2 Pa, using an ion beam with a voltage of 2.7KV and a current of 100mA to bombard the target; using a voltage of 0.2KV and a beam of 100mA to bombard the sample; the bombardment time is 10min.

[0029] 3. The sputtering source uses an ion beam with a voltage of 2.7KV and an ion beam of 100mA to bombard the graphite target; an ion beam with a voltage of 2.5KV and a beam of 20mA bombards the chromium target, and the auxiliary source uses a voltage of 0.25KV and a beam of 25mA on the surface of the workpiece Deposit hydrogen-free diamond-like carbon film, the deposition time is ...

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Abstract

The invention discloses a preparation method of a metal doped hydrogen-free diamond-like carbon film which. The method is characterized in that an ion beam assisted deposition technology is utilized to prepare a metal doped hydrogen-free diamond-like film on a workpiece and a metal target and a graphite target are used for carrying out double-target sputtering. The preparation method comprises the following specific steps of: cleaning and activating ions on the surface of the workpiece and depositing to prepare the metal doped hydrogen-free diamond-like film. The prepared metal doped hydrogen-free diamond-like film has relatively higher film hardness, film-matrix binding force, elastic modulus, abrasion resistance, thermal stability and other performances. The preparation method is strong in technological operability and good in repeatability and can be applied to the surface treatment of silicon and various metal workpieces.

Description

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Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/34
Inventor 岳文王松付志强王成彪于翔彭志坚庞天舒
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
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