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Photovoltaic devices with multiple junctions separated by a graded recombination layer

一种光伏、光伏结的技术,应用在光伏发电、电气元件、电固体器件等方向,能够解决光伏不相容、妨碍实施等问题

Active Publication Date: 2013-04-24
THE GOVERNING COUNCIL OF THE UNIV OF TORONTO
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the sequential combination of tunnel junction p-type and n-type materials and the processing limitations of colloidal quantum dots, tunnel junctions are not compatible with colloidal quantum dot-based photovoltaics.
Although the above-mentioned high energy barriers in organic photovoltaics have been reduced by inserting well layers and metal nanoparticles between the electron transfer layer and the hole transfer layer [see Hiramoto, M. et al., Chem. Lett. 19, 327- 330 (1990); Yakimov, A. et al., AppI. Phys. Lett.80, 1667-1669 (2002); Kim. J.Y. et al., Science 317, 222-225 (2007)], on colloidal quantum dots and related devices The limitations of non-aqueous processing hinder the implementation of aqueous-based (aqueous-based) processing schemes suitable for organic photovoltaics

Method used

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  • Photovoltaic devices with multiple junctions separated by a graded recombination layer
  • Photovoltaic devices with multiple junctions separated by a graded recombination layer
  • Photovoltaic devices with multiple junctions separated by a graded recombination layer

Examples

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example 1

[0086] This example illustrates the synthesis and purification of colloidal quantum dots suitable for use in the present invention.

[0087] chemical. Lead oxide (PbO) (99.9%), oleic acid (90%), bis(trimethylsilyl)sulfur (TMS, synthetic grade), octadecene-1 (90%) were obtained from Sigma-Aldrich ), 3-mercaptopropionic acid (99%), terpineol, polyethylene glycol monooctylphenyl ether (Triton-X), and all solvents (anhydrous grade). Gold (copper) sputtering target (99.99%), titanium dioxide (TiO 2 ) sputtering targets and indium tin oxide (ITO) sputtering targets. A glass substrate (Pilkington TEC15) coated with fluorine-doped tin oxide was obtained from Hartford Glass.

[0088] Colloidal quantum dot synthesis and purification. TMS (0.18 g, 1 mol) was added to octadecene-1 (10 mL) which was dried and degassed by heating in vacuo to 80 °C for 24 hours. A mixture of oleic acid (1.34g, 4.8mmol), PbO (0.45g, 2.0mmol) and octadecene-1 (14.2g, 56.2mmol) was heated in vacuo to 95°C ...

example 2

[0091] This example illustrates the optical properties of PbS colloidal quantum dot films.

[0092] After depositing each layer, a multilayer spin-coating method provided a 30 nm thick PbS colloidal quantum dot film. Fabrication of single-junction photovoltaic devices with 4-layer, 8-layer and 12-layer spin-coated PbS colloidal quantum dot films except for the gold top contact. The transmission spectra of these devices were obtained by using a UV-vis-IR (ultraviolet visible infrared) scanning spectrometer with an integrating-sphere. Transmitted light from the same device substrate was used as a reference for 100% transmittance. The transmittance of the PbS film was acquired at a wavelength of 975 nm. exist Figure 5 In , the transmittance is plotted as a function of the number of layers. The red curve shows that the experimental data represented by the black square dots conform to the optical equation Beer's law. According to the diagram, each knot is obtained. This grap...

example 3

[0094] This example illustrates the TiO 2 conductivity measurement.

[0095] The conductivity of ITO and AZO was obtained by measuring the electrical resistance of ITO and AZO films (dimensions 1 inch by 1 inch) with a thickness of 100 nm. TiO obtained by this method 2 The resistance is too high. We first deposited 30nm thick TiO on a clean substrate 2 membrane, then placed as Figure 6 Patterned Ag used as electrodes is shown. Measuring TiO between two close Ag electrodes 2 resistance of the membrane. Equation I below describes the TiO 2 resistance of the membrane. TiO 2 conductivity from Figure 4 From the inset of a.

[0096] Equation I: R=(1 / σ)·(1 / d)·(1 / W)

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Abstract

A recombination layer with a gradient work function is provided which increases the power-conversion efficiency of multijunction photovoltaic devices by reducing the energy barrier to charge carriers migrating between pairs of photovoltaic junctions thereby facilitating the optimal recombination of opposing electron and hole currents generated when the photovoltaic is illuminated.

Description

[0001] Cross References to Related Applications [0002] This application claims U.S. Provisional Patent Application No. 61 / 315,948, filed June 7, 2010, and U.S. Provisional Patent Application No. 13 / 022,350, filed February 7, 2011 (which claims U.S. Provisional Patent Application No. Priority of Provisional Patent Application No. 61 / 315,948). These applications are hereby incorporated by reference in their entirety. Background technique [0003] ITechnical field [0004] The present invention relates to the field of multijunction photovoltaic cells and quantum dots. [0005] II DESCRIPTION OF PRIOR ART [0006] Because the bandgap of colloidal quantum dots (colloidal quantum dots) can be modulated based on their size to absorb light of different wavelengths [see Konstantatos, G. et al., Nature 442, 180-183 (2006); Konstantatos et al., Nature Photon.1 , 531-534 (2007); Clifford, J.P. et al., Nature Nanotech.4, 40-44 (2009); Rauch, T. et al., Nature Photon.3, 332-336 (2009)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42
CPCH01L31/0687H01L31/035218H01L31/022466Y02E10/50H01L51/42H01L31/022475Y02E10/549H01L31/0725Y02E10/544H10K30/50H01L31/072H10K30/00
Inventor 阿伦·巴克豪斯王西华爱德华·H·萨金特加达·科列拉特卢卡什·布若佐夫斯基
Owner THE GOVERNING COUNCIL OF THE UNIV OF TORONTO