Preparation method of material adopting ZnO nanorod and ZnO nanosheet composite structure

A technology of nanosheet and composite structure, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem that it is difficult to effectively improve the specific surface area of ​​the photoanode, limit the amount of dye loading, and the photoelectric conversion of the battery Low efficiency and other issues, to achieve the effect of improving photoelectric replacement efficiency, uniform composite structure morphology, and high charge transfer efficiency

Active Publication Date: 2015-06-10
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of photoanode with an array structure has a fast linear electron transport channel, which can effectively avoid the recombination loss of electrons, but on the other hand, this single nanostructure makes it difficult to effectively increase the specific surface area of ​​the photoanode, which limits the loading of dyes. amount, so the photoelectric conversion efficiency of the battery is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of material adopting ZnO nanorod and ZnO nanosheet composite structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] 1. Clean the FTO substrate: ultrasonically clean with acetone for 10 minutes, then ultrasonically clean with deionized water and absolute ethanol for 20 minutes each. Remove the contamination layer on the FTO surface, and finally get a clean FTO substrate, which is dried at 60°C in a drying oven. The resistivity of the ultrapure water used must be above 16 Ω·cm;

[0014] 2. Configure 0.025M Zn (NO 3 ) 2 Put 20ml of the aqueous solution in a glass beaker and stir it until it is completely dispersed.

[0015] 3. Prepare 20ml of 0.025M urotropine aqueous solution in a glass beaker, stir magnetically until completely dispersed.

[0016] 4. Pour the urotropine aqueous solution in step 3 into the Zn(NO 3 ) 2 In the aqueous solution, continue to stir until uniformly dispersed.

[0017] 5. Carry out hydrothermal synthesis reaction: put the cleaned FTO substrate and a piece of aluminum oxide sheet in step 1 into a 50ml high-pressure reactor at the same time, and pour the m...

Embodiment 2

[0022] 1. Clean the FTO substrate: ultrasonically clean with acetone for 10 minutes, then ultrasonically clean with deionized water and absolute ethanol for 20 minutes each. Remove the contamination layer on the FTO surface, and finally get a clean FTO substrate, which is dried at 60°C in a drying oven. The resistivity of the ultrapure water used must be above 16 Ω·cm;

[0023] 2. Configure 0.022M ZnNO 3. Put 20ml of the aqueous solution in a glass beaker and stir it until it is completely dispersed.

[0024] 3. Configure 20ml of 0.023M urotropine aqueous solution in a glass beaker, stir magnetically until completely dispersed.

[0025] 4. Pour the urotropine aqueous solution in step 3 into the ZnNO in step 2 3. In the aqueous solution, continue to stir until uniformly dispersed.

[0026] 5. Carry out hydrothermal synthesis reaction: put the cleaned FTO and a piece of alumina film in step 1 into a 50ml high-pressure reactor at the same time, and pour the mixed solution obt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of a material adopting a ZnO nanorod and ZnO nanosheet composite structure, and belongs to the technical field of nanometer material preparation. The method adopts a single-step hydrothermal reaction method, and includes the steps of placing alumina sheets and an FTO (fluorinedoped tin oxide) substrate into a high-pressure reactor at the same time, subjecting ZnNO3*6H2O to a hydrothermal reaction with a urotropin solution in the reaction system, and cooling to the room temperature after a period of reaction to prepare the material adopting the ZnO nanorod and ZnO nanosheet composite structure. The material is integrated with the electrical linear transmission passage function of a nano array structure, improves the specific surface area of a photo-anode, and guarantees high electrical transmission efficiency and large dye absorption capacity; the sheet structure grows on FTO directly, therefore the contact capacity between a photo-anode material and FTO is improved, the open-circuit voltage and short-circuit current of a DSSC (dye-sensitized solar cell) can be improved, and the wide practical application value is provided in the DSSC field.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, in particular to a method for preparing ZnO nanocolumns and ZnO nanosheet composite structure materials. Background technique [0002] ZnO is a semiconductor material with a wide band gap. Its band gap is 3.37 eV, and its exciton binding energy at room temperature is as high as 60 meV. It has excellent thermal stability and good photoelectric properties, making it suitable for optoelectronic devices, especially dyes It has potential application value in sensitized solar cells (DSSC). As photoanode materials for dye-sensitized solar cells, one-dimensional ZnO nanowire or nanorod arrays have been extensively studied. This type of photoanode with an array structure has a fast linear electron transport channel, which can effectively avoid the recombination loss of electrons, but on the other hand, this single nanostructure makes it difficult to effectively increase the specific surf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/23C01G9/02B82Y30/00H01G9/20
CPCY02E10/542
Inventor 李美成姜永健余航李晓丹余悦赵兴
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap