Thin film transistor, manufacturing method therefor, and display apparatus having thin film transistor, sputtering target material

A technology for thin film transistors and sputtering targets, which is used in transistors, semiconductor/solid-state device manufacturing, identification devices, etc., can solve the problems of difficult etching of laminated structures and increased manufacturing costs, and achieve good adhesion and electrical characteristics. The effect of reducing the realization and suppressing the diffusion of

Inactive Publication Date: 2013-05-08
SH COPPER PROD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as described above, Mo is expensive, and it is difficult to etch a laminated struc

Method used

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  • Thin film transistor, manufacturing method therefor, and display apparatus having thin film transistor, sputtering target material
  • Thin film transistor, manufacturing method therefor, and display apparatus having thin film transistor, sputtering target material
  • Thin film transistor, manufacturing method therefor, and display apparatus having thin film transistor, sputtering target material

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0125] [Example 1]

[0126]

[0127] Hereinafter, a method of manufacturing the TFT of Example 1 will be described. The semiconductor layer of the TFT of the first embodiment is composed of a silicon film, and in the bottom gate type, it has a top contact structure in which a source electrode and a drain electrode are formed after the semiconductor layer is formed. In addition, since the TFT structure becomes complicated when reflecting the correct film thickness and size, the figure is a schematic representation.

[0128] Figure 8 It is a figure showing the manufacturing process of the TFT of this Example, Figure 8 (a) to (d) are cross-sectional views of the TFT during the respective steps.

[0129] First, a Cu alloy 2 is formed into a film by sputtering or the like on a substrate 1 made of an insulating material such as alkali-free glass. The film thickness of the Cu alloy 2 is, for example, about 10 nm to 150 nm, preferably 20 nm to 50 nm. Here, the Cu alloy 2 to b...

Example

[0142] [Example 1 and 2 to 19]

[0143] As shown in Table 2, in Example 1, the element added to the copper alloy electrode was Mo, but in Examples 2 to 19, the components and addition concentrations in Table 2 were used respectively, and the same as in Example 1 In the same manner, a copper alloy electrode having the composition and target addition concentration shown in Table 2 was formed into a thin film transistor. The actual concentration of additive elements in the source / drain copper alloy electrodes is quantified by taking out the substrate during the manufacturing process and using EDX (Energy Dispersive X-ray Spectroscopy). The manufactured thin film transistor was left in the atmosphere at 25° C. for 60 days, and the presence or absence of peeling of the Si semiconductor layer and the source / drain copper alloy electrode was investigated by a scanning electron microscope. In addition, the presence or absence of etching residues when the source / drain copper alloy elec...

Example Embodiment

[0148] [Example 20]

[0149]

[0150] Hereinafter, a method of manufacturing a TFT according to Example 20 of the present invention will be described. The semiconductor layer of the TFT of Example 20 is composed of an oxide semiconductor film, and has a top contact structure in which a source electrode and a drain electrode are formed after the semiconductor layer is formed in the bottom gate type. In addition, since the TFT structure becomes complicated when reflecting the correct film thickness and size, it is shown schematically in the drawing. In addition, a part of the repeated description in the second embodiment and the first embodiment is omitted.

[0151] Figure 10 (a)-(d) are figures which show the cross-section of TFT in each process. First, as in Example 1, a Cu alloy 2 is formed (deposited) by a sputtering method on a substrate 1 made of an insulating material such as alkali-free glass. Next, pure Cu 3 is continuously deposited (deposited) by the same sputt...

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Abstract

On condition that Cu alloy is used in wiring of a thin film transistor (TFT), TFT movability reduction occurs when oxidation treatment is performed on a semiconductor layer which is composed of silicon film. Additionally, when Cu alloy contacts with a semiconductor layer which is composed of oxide semiconductor film for heating, subthreshold coefficient increase, negative offset of threshold voltage and normal conduction operation of TFT occur. The present invention provides a thin film transistor which is provided with the following components on a substrate: a grid insulating film, a Si-series semiconductor layer, source/drain electrodes with a Cu alloy layer, and an oxide film which is formed on an interface between the source/drain electrodes and the Si-series semiconductor layer. The thin film transistor is characterized in that: the Cu alloy layer comprises Cu and at least one added element; the depth distribution peak of the oxygen atom concentration in the oxide film is between 40atom% and 60atom%; and furthermore, when the distance of 10atom% to the oxygen atom concentration peak or the oxygen distribution of the interface between the source/drain electrodes and the Si-series semiconductor layer is defined to film thickness of the oxide film, the film thickness of the oxide film is less than 1.8nm.

Description

technical field [0001] The present invention relates to a thin film transistor, a method for manufacturing the same, an active matrix display device using the thin film transistor, and a sputtering target. Background technique [0002] In recent years, in an active matrix display device using a thin film transistor (TFT: Thin Film Transistor) as a pixel circuit, it is required to increase its size, improve the resolution of pixels, and improve the animation performance by doubling the frame frequency. Improvement in image quality of 3D display devices for consumer use is required. On the other hand, the price of display devices continues to drop at an unexpected rate, and the main factors driving up manufacturing costs, such as rising prices of energy resources and rare metals, continue to increase. Therefore, it is imperative to develop techniques for further reducing manufacturing costs. [0003] In order to meet the above requirements, for example, in liquid crystal dis...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/51H01L21/336H01L21/283G09F9/33C23C14/34
CPCH01L21/02252H01L29/458H01L29/66765
Inventor 浅沼春彦楠敏明外木达也辰巳宪之
Owner SH COPPER PROD
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