High-voltage-resistant and high-energy-density capacitor and preparation method thereof

A technology with high energy storage density and capacitors, applied in the direction of multilayer capacitors, fixed capacitor electrodes, fixed capacitor dielectrics, etc., can solve the problems of poor semiconductor integration process compatibility, large capacitor volume, and low capacitor energy storage density, etc., to achieve optimal orientation. and the effects of electrical properties, high energy storage density, and high-efficiency preparation

Active Publication Date: 2013-07-24
欧阳俊
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of low capacitor energy storage density, large capacitor volume, environmental friendliness requirem

Method used

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  • High-voltage-resistant and high-energy-density capacitor and preparation method thereof
  • High-voltage-resistant and high-energy-density capacitor and preparation method thereof
  • High-voltage-resistant and high-energy-density capacitor and preparation method thereof

Examples

Experimental program
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Example Embodiment

[0035] Example 1

[0036] Heat the substrate to 200-500℃ through the heating wire, adjust the revolution motor so that the substrate is facing the Ti target, turn on the RF power of the Ti target, and adjust the power density of the Ti target to 2-5W / cm 2, a Ti metal film with a thickness of 20-100 nm was prepared as the transition layer between the electrode Pt and the Si matrix.

[0037] Adjust the revolution motor so that the substrate is in the position facing the Pt target, turn on the RF power supply of the Pt target, and adjust the power density of the Pt target to 2-5W / cm 2 , Pt metal films with a thickness of 80-500 nm were prepared.

[0038] Then, oxygen with a flow rate of 10-40sccm is introduced into the chamber, and the valve plate valve of the equipment is adjusted to keep the chamber pressure at 0.3-3pa. Adjust the revolution motor so that the substrate is facing the BaTiO 3 Target position, turn on BaTiO 3 Target RF power supply, tuned BaTiO 3 The power de...

Example Embodiment

[0040] Example 2

[0041] All films were prepared at medium and low temperature (≤500°C).

[0042] Using a single target to perform radio frequency magnetron coaxial sputtering in sequence, including the following steps:

[0043] (i) Matrix treatment:

[0044] Choose Si or SiO 2 / Si was used as the substrate of the film capacitor, which was ultrasonically cleaned with acetone and alcohol and dried by blowing. Heat it to 200-500°C.

[0045] (ii) Deposition of metal thin films on the substrate:

[0046] Using metal Ti target and Pt target, it is completed by radio frequency magnetron sputtering. The sputtering atmosphere is pure Ar, the gas flow is controlled at 20-100sccm, the gas pressure is 0.3-3Pa, and the target power density is 2-5W / cm 2 , the total film thickness is controlled at 100-600nm.

[0047] (iii) Deposition of conductive oxide films:

[0048] Using perovskite LaNiO 3 The target is completed by radio frequency magnetron sputtering. The sputtering atmosph...

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Abstract

The invention relates to a high-voltage-resistant and high-energy-density capacitor and a preparation method thereof. The high-voltage-resistant and high-energy-density capacitor comprises a substrate, a bottom electrode, a dielectric layer and a top electrode, wherein Si or SiO2/Si is taken as the substrate; the bottom electrode is a metal film, a conductive oxide film or a combination of both; the dielectric layer consists of a BaTiO3 ferroelectric film; and the top electrode is a metal film point electrode. A metal target or/and conductive oxide target is adopted, and a single target is used for depositing a metal film or a conductive oxide film, or depositing the meal film and the conductive oxide film in sequence on the substrate in a radio-frequency or direct current magnetron sputtering way; a ceramic BaTiO3 target is adopted, and a BaTiO3 layer is deposited on the bottom electrode in a radio-frequency magnetron sputtering way; and a metal target is adopted, and the top electrode is deposited in a radio-frequency magnetron sputtering way. The film capacitor prepared with the method has the advantages of small size, high voltage resistance and breakdown field strength Eb of higher than 1000kV/cm; the practical discharging energy density is not less than 10J/cm<3>; and the loss is low, and the dielectric performance is kept stable when the frequency and temperature change.

Description

technical field [0001] The invention relates to a ferroelectric ceramic film capacitor and a preparation method thereof. Background technique [0002] Compared with ordinary batteries and electrochemical capacitors, conventional capacitors have low specific energy due to their lightness, high efficiency, environmental friendliness, and high specific power. In recent years, due to the development of new technologies and the requirements of new applications, high energy storage density capacitors with high energy storage, miniaturization, light weight, low cost, and high reliability have been more and more widely studied. [0003] There are three main types of capacitors that are currently used: 1) Electrolytic capacitors (Al, Ta). The capacitance of this kind of capacitor is large, but the capacitance decreases at high temperature and high frequency, and the leakage current increases. 2) Polymer film capacitors. This kind of capacitor has a strong breakdown field, but has ...

Claims

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Application Information

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IPC IPC(8): H01G4/12H01G4/008H01G4/33
Inventor 欧阳俊袁美玲
Owner 欧阳俊
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