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Preparation method of ferromagnetism enhanced BiFeO3 film

A ferromagnetic and thin-film technology, applied in the field of BiFeO3 thin film preparation, can solve the problems of structure and composition segregation, complex composition and crystal structure, difficulty in obtaining materials with a single phase, etc., and achieve the effect of easy structure control

Inactive Publication Date: 2015-06-10
INNER MONGOLIA UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for BiFeO 3 For this kind of complex perovskite oxide, its composition and crystal structure are relatively complex, and the segregation of structure and composition is easy to occur in the process of sputtering and deposition. Therefore, it is generally difficult to obtain materials with a single phase. For this reason, currently There are still no reports on the assembly of complex perovskite oxide thin film materials using cluster beam devices

Method used

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  • Preparation method of ferromagnetism enhanced BiFeO3 film
  • Preparation method of ferromagnetism enhanced BiFeO3 film
  • Preparation method of ferromagnetism enhanced BiFeO3 film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Choose BiFeO with a diameter of 50mm and a thickness of 3mm 3 The ceramic target is used as the sputtering target, and the single crystal (100) oriented Pt / Ti / SiO 2 After ultrasonic cleaning, the / Si substrate was fixed on the base of the deposition chamber and sealed in the third-stage air pressure differential system of the cluster beam deposition system.

[0033] Use mechanical pump and molecular pump to pre-evacuate, so that the vacuum pressure of the deposition chamber is equal to 2×10 -5 Pa. Liquid nitrogen is introduced into the side wall of the gas-phase aggregation method cluster beam source chamber. After the chamber is fully cooled, argon gas is introduced through the inert gas inlet to make the chamber pressure reach 100Pa. Sources produced by magnetron sputtering containing high-density BiFeO 3 gas. In the condensation chamber, BiFeO 3 Gradually grow into clusters through the continuous collision with argon atoms, and the formed clusters are carried by...

Embodiment 2

[0038] Deposit BiFeO according to the process of implementation 1 3 , the difference is only that liquid nitrogen is introduced into the side wall pipeline of the cluster beam source chamber of the gas phase aggregation method. Magnetron sputtering in a cluster beam source produces high-density BiFeO 3 gas. The deposition time of the film is 30 minutes, and a nanocluster film with a thickness of 180 nanometers is formed on the substrate; the obtained film is annealed at 800° C. for 5 minutes in an oxygen atmosphere by a rapid heat treatment system.

Embodiment 3

[0040] Deposit BiFeO according to the process of implementation 1 3 , the difference is only that liquid nitrogen is introduced into the side wall pipeline of the cluster beam source chamber of the gas phase aggregation method. Magnetron sputtering in a cluster beam source produces high-density BiFeO 3 The gas, where the condensation distance is set to 100mm. The deposition time of the film is 50 minutes, and a nanocluster film with a thickness of 300 nanometers is formed on the substrate; the obtained film is annealed at 500° C. for 10 minutes under a nitrogen atmosphere by a rapid heat treatment system.

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Abstract

The invention relates to a preparation method of a ferromagnetism enhanced BiFeO3 film. The method provided in the invention makes use of an ultrahigh vacuum cluster beam system to prepare a film assembled by cluster nanoparticles so as to realize control of film properties on a nanometer scale, and therefore, the BiFeO3 film with enhanced ferromagnetism at room temperature is obtained. With saturated magnetization intensity up to 108emu / cc, the film has very high low field magnetization intensity. Under a magnetic field of 3000Oe, the in-plane magnetization intensity of the film reaches 81emu / cc.

Description

technical field [0001] The present invention relates to a kind of BiFeO 3 Preparation method of thin film, especially related to a kind of BiFeO with enhanced ferromagnetism 3 The method of film preparation. Background technique [0002] Multiferroicity refers to the simultaneous existence of multiple basic ferroic properties in a single-phase material, including ferroelectricity, ferromagnetism, and ferroelasticity. There is an interaction between ferroelectricity and magnetism in this type of material, which is manifested as the phenomenon of spontaneous polarization (magnetization) of the material in a magnetic field (electric field), which is called the magnetoelectric coupling effect. The study of the magnetoelectric coupling effect originated in 1894 when the French physicist Pierre Curie predicted the existence of a material capable of producing electric polarization under the action of an external magnetic field or induced magnetization under the action of an exter...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34H01F10/20
Inventor 赵世峰杨波云麒阿立玛刘珍珍
Owner INNER MONGOLIA UNIVERSITY
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