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ito-indium halide double-layer conductive film and preparation method thereof

An indium halide, conductive film technology, applied in coatings, electric light sources, electrical components, etc., can solve the problems of increasing the carrier injection barrier, affecting the conductivity of the film, hindering the luminous efficiency, etc. Efficient, easy-to-control effects

Inactive Publication Date: 2016-02-10
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The work function of ITO is generally only 4.5eV, and after treatment with UV light or ozone, it can only reach 4.7-5.1eV, which is compared with the HOMO energy level of the general organic light-emitting layer (typically 5.7-6.3eV). The large energy level gap increases the carrier injection barrier and hinders the improvement of luminous efficiency.
[0003] The surface work function of the conductive film can be improved by post-treatment, but due to the extra steps, the cost is higher and the efficiency is lower.
However, the method of improving the work function by doping certain elements in the film has certain restrictions: because a large amount of doping will affect the conductivity of the film, and a small amount of doping will not achieve the purpose of improving the work function.

Method used

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  • ito-indium halide double-layer conductive film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1. Select In with a purity of 99.99% 2 o 3 and SnO 2 Powder (of which, In 2 o 3 The mass number is 176g, SnO 2 The mass number is 24g), after uniform mixing, sintering at 1250°C, and natural cooling to obtain an ITO ceramic target sample, which is cut into an ITO ceramic target with a diameter of 50 mm and a thickness of 2 mm; and

[0026] Choose InF with a purity of 99.99% 3 Powder 150g, sintered at 750°C, cooled naturally to obtain InF 3 Ceramic target sample, cut the ceramic target sample into InF with a diameter of 50mm and a thickness of 2mm 3 ceramic target;

[0027] 2. Combine ITO, InF 3 The ceramic target is loaded into the vacuum chamber of the magnetron sputtering coating equipment;

[0028] 3. Clean the glass substrate ultrasonically with acetone, absolute ethanol and deionized water successively, and perform oxygen plasma treatment on it, and then put it into the vacuum chamber of the magnetron sputtering coating equipment; among them, the substrate...

Embodiment 2

[0034] 1. Select In with a purity of 99.99% 2 o 3 and SnO 2 Powder (of which, In 2 o 3 The mass number is 194g, SnO 2 The mass number is 6g), after uniform mixing, sintering at 900°C, and natural cooling to obtain an ITO ceramic target sample, which is cut into an ITO ceramic target with a diameter of 50 mm and a thickness of 2 mm; and

[0035] Choose InF with a purity of 99.99% 3 150g powder, sintered at 600°C, cooled naturally to obtain InF 3 Ceramic target sample, cut the ceramic target sample into InF with a diameter of 50mm and a thickness of 2mm 3 ceramic target;

[0036] 2. Combine ITO, InF 3The ceramic target is loaded into the vacuum chamber of the magnetron sputtering coating equipment;

[0037] 3. Clean the glass substrate ultrasonically with acetone, absolute ethanol and deionized water successively, and perform oxygen plasma treatment on it, and then put it into the vacuum chamber of the magnetron sputtering coating equipment; among them, the substrate of...

Embodiment 3

[0042] 1. Select In with a purity of 99.99% 2 o 3 and SnO 2 Powder (of which, In 2 o 3 The mass number is 160g, SnO 2 The mass number is 40g), after uniform mixing, sintering at 1300°C, and natural cooling to obtain an ITO ceramic target sample, which is cut into an ITO ceramic target with a diameter of 50mm and a thickness of 2mm; and

[0043] Choose InF with a purity of 99.99% 3 Powder 150g, sintered at 950°C, cooled naturally to obtain InF 3 Ceramic target sample, cut the ceramic target sample into InF with a diameter of 50mm and a thickness of 2mm 3 ceramic target;

[0044] 2. Combine ITO, InF 3 The ceramic target is loaded into the vacuum chamber of the magnetron sputtering coating equipment;

[0045] 3. Clean the glass substrate ultrasonically with acetone, absolute ethanol and deionized water successively, and perform oxygen plasma treatment on it, and then put it into the vacuum chamber of the magnetron sputtering coating equipment; among them, the substrate o...

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Abstract

The invention belongs to the field of conductive films and discloses an ITO-indium halide bilayer conductive film and a preparation method thereof. The bilayer conductive film includes an ITO layer and an indium halide layer, wherein the ITO layer has a content of 80-97 wt% of In2O3 and 3-20% of SnO2, and the halogen in the indium halide is one selected from the group consisting of F, Cl or Br. The present invention uses a magnetron sputtering apparatus to prepare the ITO-indium halide bilayer conductive film. The conductive film has a visible light transmittance of 85-90% in the wavelength range of 450-790 nm, a square resistance range of 20-90 omega / square, and a surface work function of 5.5-6.1 eV.

Description

technical field [0001] The invention relates to the field of conductive thin films, in particular to an ITO-indium halide double-layer conductive film and a preparation method thereof. Background technique [0002] Transparent conductive film electrodes are the basic components of organic electroluminescent devices (OLEDs), and their performance directly affects the luminous efficiency of the entire device. Among them, indium tin oxide (ITO) is the most commonly used transparent conductive film material, which has high visible light transmittance and low resistivity. However, in order to improve the luminous efficiency of the device, the transparent conductive film anode is required to have a higher surface work function. The work function of ITO is generally only 4.5eV, and after treatment with UV light or ozone, it can only reach 4.7-5.1eV, which is compared with the HOMO energy level of the general organic light-emitting layer (typically 5.7-6.3eV). The large energy lev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/35H05B33/10
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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