Copper metal connection line of three-five compound semiconductor assembly
A copper metal and compound technology, applied in semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problem that compound semiconductors cannot be directly applied, and achieve the effect of reducing production costs
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[0017] figure 1 It is a schematic cross-sectional structure diagram of a copper metal connection wire of a III-V compound semiconductor component of the present invention, including a III-V compound semiconductor component 100, wherein the III-V compound semiconductor component is made of gallium arsenide (GaAs), indium phosphide ( InP) or gallium nitride (GaN) and other III-V compound semiconductor materials; the III-V compound semiconductor component can be a heterojunction bipolar transistor (HBT), a heterojunction field effect transistor ( HFET), a diode or other III-V compound semiconductor components; and a copper metal connection line 110; the copper metal connection line 110 includes a metal contact layer 111 and a copper-containing metal layer 112; the metal contact layer 111 is located on the copper-containing Below the metal layer 112, an adhesion layer is used to adhere to the semiconductor material below; a barrier layer is used to isolate the diffusion of copper ...
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