Nitrogen-doped p-type tin dioxide film and preparation method thereof

Abstract

The invention discloses a nitrogen-doped p-type tin dioxide film and a preparation method thereof. The film is characterized in that the tin dioxide film is doped with 1-30% of element nitrogen, the 1s electron binding energy is 394.5-398.5 electron volts, the conduction type of the film is p type, the resistivity is 0.14-12 ohm*cm, the hole mobility is 0.62-3.6 cm<2> / Vs, and the carrier concentration is 10<17>-10<19> / cm<3>. The method comprises the following steps: respectively arranging a metal tin target and a substrate on a cathode in a vacuum chamber of a magnetron sputtering apparatus and in a sample stage, wherein the distance between the metal tin target and the substrate is 8-12 cm; after the vacuum degree of the vacuum chamber is no more than 5.0*10<-4> Pa, sputtering for 30-60 minutes under the condition that the vacuum chamber is in a nitrogen-argon mixed atmosphere, thus obtaining a tin nitride film; and arranging the tin nitride film in an air or argon-oxygen mixed atmosphere, and annealing at 350-600 DEG C for 60-120 minutes, thus obtaining the target product. The nitrogen-doped p-type tin dioxide film has the advantages of p-type conduction and light transmission property, and can be widely used in the fields of photoelectronic devices, solar batteries, transparent conductive electrodes, gas sensing devices and the like.

Description

technical field [0001] The invention relates to a tin dioxide thin film and a preparation method thereof, in particular to a nitrogen-doped P-type tin dioxide thin film and a preparation method thereof. Background technique [0002] Tin dioxide has excellent electrical and optical properties, and is widely used in transparent conductive electrodes, gas sensitive detection, solar cells, and short-wavelength optoelectronic devices. Recently, people have made some attempts and efforts in order to explore and improve the application range of tin dioxide, such as "a kind of tantalum-doped tin oxide" disclosed in CN 101260512 published on September 10, 2008. Preparation method of transparent conductive film". The preparation method mentioned in this manual is to first make Ta 2 o 5 and SnO 2 After the powder is mixed and pressed into shape, it is sintered into a tantalum-doped tin oxide sputtering target, and then the target is sputtered by magnetron sputtering to obtain a spu...

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Problems solved by technology

However, both the tantalum-doped tin oxide transparent conductive film and its preparation method have shortcomings. First, the final product is an n-type conductive film, which has excellent photoelectric properties, good mechanical properties, and chemical durability. properties, high temperature thermal stability, etc., but failed to change the n-type conductive tin dioxide film into a p-type conductive film after doping to solve the problem of p-n junction for electronic or optoelectronic devices based on tin dioxide It is the most basic component unit in these devices, so it is difficult to have thin film materials with p-type and n-type conductivity at the same time; secondly, the preparation method not only cannot obtain doped tin dioxide thin films with p-type conductivity, but also needs to be fabricated in advance. Sputtering target defects, that is, need to go through the dopant and SnO 2 The link of powder mixing, pressing and high-temperature sintering for a long time not only increases the complexity of the process, but also consumes energy and time.

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