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Low temperature solid phase preparation method of indium tin oxide nano particle powder

A nanoparticle, indium tin oxide technology, applied in tin oxide, chemical instruments and methods, nanotechnology, etc., can solve problems such as particle agglomeration, and achieve the effect of small particle size, low energy consumption, and increased dispersibility

Inactive Publication Date: 2013-09-25
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, and to provide a low-temperature solid-phase preparation method of indium tin oxide nanoparticle powder, which can prepare indium oxide at a relatively low calcination temperature (300-500°C). Tin nanoparticle powder can overcome the problems of high energy consumption and serious particle agglomeration caused by high-temperature calcination, and the operation process is simple, the raw materials used are cheap, and can be recycled, which is suitable for industrial scale production

Method used

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Embodiment 1

[0034] Indium metal with a purity greater than 99.99% is dissolved in nitric acid to prepare In3+ Concentration is 0.19mol / L solution, SnCl 4 ·5H 2 O was dissolved in distilled water to make a solution, and then the indium nitrate solution and the tin chloride solution were mixed according to In 2 o 3 :SnO 2 (wt%)=9:1 to make a mixed solution, then add NaCl to the mixed solution, where NaCl:In 3+ (mol%)=10:1, dissolve NaCl completely after stirring, then add ammonia water to the mixed solution, control the pH value of the reaction between 7.0 and 10.0, and finally generate the precursor of indium tin oxide, and then put the reaction system at 80 Drying treatment at ~90°C, and grinding to obtain mixed powder, then calcining the mixed powder at 400°C for 2 hours, washing the calcined product with water to remove NaCl, drying at 80-90°C, and finally Indium tin oxide nano particle powder is obtained. figure 1 is the X-ray diffraction spectrum of the prepared indium tin oxide ...

Embodiment 2

[0036] Indium metal with a purity greater than 99.99% is dissolved in nitric acid to prepare In 3+ Concentration is 0.19mol / L solution, SnCl 4 ·5H 2 O was dissolved in distilled water to make a solution, and then the indium nitrate solution and the tin chloride solution were mixed according to In 2 o 3 :SnO 2 (wt%)=9:1 to prepare a mixed solution, and then add Na to the mixed solution 2 SO 4 , where Na 2 SO 4 :In 3+ (mol%)=20:1, after stirring Na 2 SO 4 Dissolve completely, then add ammonia water to the mixed solution, control the pH value of the reaction between 7.0 and 10.0, and finally generate an indium tin oxide precursor, then dry the reaction system at 80-90°C, and grind it Finally, the mixed powder is obtained, and then the mixed powder is calcined at 400°C for 2 hours, and the calcined product is washed with water to remove Na 2 SO 4 Finally, dry treatment is carried out under the condition of 80-90° C. to finally obtain indium tin oxide nano particle powd...

Embodiment 3

[0038] This embodiment proceeds according to the following steps:

[0039] 1) Dissolve metal indium with a purity greater than 99.99% in concentrated sulfuric acid to form an initial solution, and the In of the configured initial solution 3+ The concentration is 0.01mol / L.

[0040] 2) Add tin metal salt to the initial solution to form a mixed solution A; the tin metal salt can be Sn(SO 4 ) 2 .

[0041] 3) Then add a water-soluble inorganic salt to the mixed solution A, the water-soluble inorganic salt and In 3+ The molar ratio is 5. In this embodiment, KCl is selected as the water-soluble inorganic salt; after stirring, the inorganic salt is completely dissolved to obtain a mixed solution B.

[0042] 4) Add ammonia water to the mixed solution B, control the pH value of the reaction between 7.0 and 10.0, and finally generate an indium tin oxide precursor;

[0043] 5) Dry the reaction system in step 4) at 80°C, and grind to obtain a mixed powder;

[0044] 6) Put the mixed...

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Abstract

The invention discloses a low temperature solid phase preparation method of indium tin oxide nano particle powder. The low temperature solid phase preparation method of the indium tin oxide nano particle powder comprises the following steps of: dissolving metal indium with inorganic acid to form an initial solution or dissolving metal salt of indium into water to prepare the initial solution, then adding metal salt of tin to form a mixed solution, then adding water soluble inorganic salt into the mixed solution, then adding ammonia water into the mixed solution, and finally generating an indium tin oxide precursor; and drying a reaction system, grinding to obtain mixed powder, then calcining the mixed powder, washing calcined products to remove the inorganic salt, and then drying, thus the indium tin oxide nano particle powder is obtained finally. By adopting the low temperature solid phase preparation method of the indium tin oxide nano particle powder, the indium tin oxide nano particle powder can be prepared at a lower calcining temperature (300-500 DEG C), the problems that energy consumption is high and particle aggregation is serious which are caused by high temperature calcination treatment can be overcome, an operation process is simple, and the used raw materials are cheap and can be recycled, so that the low temperature solid phase preparation method of the indium tin oxide nano particle powder is applicable to industrialization scale production.

Description

technical field [0001] The invention belongs to the technical field of fine chemicals, and relates to the preparation of indium tin oxide nanoparticle powder, in particular to a low-temperature solid-phase preparation method of indium tin oxide nanoparticle powder. Background technique [0002] Indium tin oxide (ITO) is indium oxide (In 2 o 3 ) doped with tin oxide (SnO 2 ) formed a solid solution, which is a highly degenerate, heavily doped semiconductor material. At present, developed countries in the world such as Japan, the United States and other countries use about 90% of indium to prepare ITO materials, which have high infrared light reflectivity (greater than 80%), high ultraviolet light absorption rate (greater than 85%), high It has excellent properties such as electrical conductivity, high hardness, wear resistance, and good chemical etching, and is widely used in solid flat panel displays, solar cells, electromagnetic shielding, transparent conductive material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/02C01G15/00B82Y30/00
Inventor 苏兴华赵鹏孟雷超艾涛阎鑫王振军
Owner CHANGAN UNIV
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