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A polycrystalline ingot furnace

A polycrystalline ingot and protective layer technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems affecting the service life of graphite hard felt, graphite hard felt corrosion, etc., to improve the temperature around the silicon ingot , avoid corrosion, reduce energy consumption

Active Publication Date: 2015-11-18
YINGLI ENERGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Silicon monoxide causes corrosion to graphite hard felt, which seriously affects the service life of graphite hard felt

Method used

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  • A polycrystalline ingot furnace
  • A polycrystalline ingot furnace
  • A polycrystalline ingot furnace

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Embodiment Construction

[0031] A polycrystalline ingot casting furnace, comprising a heat sink 1, a quartz crucible 2, a heater 3, a heat insulation baffle 4, a heat dissipation window 5 and a heat insulation layer 6, the inner wall of the heat insulation layer 6 is covered with a reflective protective layer 7; The thickness of the protective layer (7) is 3-5mm.

[0032] The height of the reflective protective layer 7 is 200-500mm.

[0033] The lower part of the reflective protective layer 7 is flush with the upper surface of the cooling platform (1).

[0034] The surface of the reflective protective layer 7 is a transverse sawtooth surface 8, and the depth of the sawtooth is 0.5-2.5mm.

[0035] The sharp angle a of the serrated surface 8 is greater than 60°, and the length L of the two sides of the sharp angle a 1 greater than L 2 .

[0036] The material of the reflective protection layer 7 has a melting point higher than 1600° C. and does not react with silicon monoxide.

[0037] The reflectiv...

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Abstract

The invention discloses a polycrystalline ingot furnace. The polycrystalline ingot furnace comprises a heat radiation bench, a quartz crucible, a heater, a heat insulation baffle plate, a heat radiation window and a heat insulation layer, and the inner wall of the heat insulation layer is covered with a reflection protecting layer; and the material of the reflection protecting layer has a melting point of above 1600DEG C and does not react with silicon monoxide. The reflection effect of the reflection protecting layer is utilized in the invention to improve the heat insulation effect of the heat insulation layer in the ingot furnace and the surrounding temperature of a silicon ingot, and slows the surrounding crystallization speed of the silicon ingot in the crystallization phase, so impurities in the edge positions surrounding molten silicon can be well segregated to the upper surface of the molten silicon without influencing the effective lengths of silicon chips obtained through cutting the silicon ingot, thereby the qualification rate of the silicon ingot is improved.

Description

technical field [0001] The invention relates to a polycrystalline ingot casting furnace. Background technique [0002] Solar power generation is an emerging renewable energy technology, and the industrialized applications are mainly solar photovoltaic power generation and solar thermal power generation. Photovoltaic is a new type of power generation system that uses the photovoltaic effect of solar cell semiconductor materials to directly convert solar energy into electrical energy. In recent years, the photovoltaic industry has developed rapidly. [0003] In the production of silicon ingots for solar cells, the distribution of impurities inside the ideal silicon ingot is as follows. The impurities are segregated and accumulated at the top position during the crystallization process of the silicon ingot, and there are no spot-like or strip-like impurities extending downward. After the top of the silicon ingot is uniformly removed, The rest can be used normally. In actual ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B28/06C30B29/06
Inventor 潘家明
Owner YINGLI ENERGY CHINA
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