Encapsulation method of large-aperture titanium-doped sapphire crystal

A sapphire crystal, large-diameter technology, applied in crystal growth, chemical instruments and methods, post-processing details, etc., can solve problems such as poor thermal stability, difficult refractive index, consistent matching, etc., to achieve strong absorption, strong bonding, and refractive index. exactly the same effect

Active Publication Date: 2016-02-10
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a large diameter titanium-doped sapphire by overcoming the problems of poor thermal stability and difficulty in completely consistent matching of the refractive index caused by the use of organic ink or hot-melt resin doped with carbon powder for edge wrapping in the prior art Crystal wrapping method, which uses titanium-doped sapphire crystal homogeneous material for wrapping, so as to achieve complete matching of refractive index and thermal stability, so as to meet the application of high-power ultrashort pulse laser devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] According to the molecular formula Cr x , Fe y ,Cu z :Al 2(1-x-y-z) o 3 Carry out the ratio of raw materials, take the value x=0.1, y=0, z=0, weigh the ultrafine aluminum oxide and chromium oxide powder, and mix them by ball milling; prepare the powder into a film by tape casting, and then mix the above The thin film is wrapped around the large-diameter titanium-doped sapphire crystal to form an edge, and the thickness of the edge is 1 mm as required. Put the edged sample into a vacuum sintering furnace, raise the temperature to 1800° C., and keep it warm for 20 hours to obtain a large-diameter titanium-doped sapphire crystal with an edge. This edged material can greatly improve the lateral ASE effect.

Embodiment 2

[0017] According to the molecular formula Cr x , Fe y ,Cu z :Al 2(1-x-y-z) o 3 Proportioning of raw materials, taking values ​​x=0, y=0.02, z=0.01, weighing ultra-fine alumina, iron oxide and copper oxide powders, mixing them by ball milling; preparing the powders into thin films by tape casting, Then wrap the above-mentioned film around the large-diameter titanium-sapphire crystal to form an edge, and the thickness of the edge is 5 mm as required. Put the edge-wrapped sample into a hydrogen atmosphere sintering furnace, raise the temperature to 1850°C, and keep it warm for 15 hours to obtain a large-diameter titanium-doped sapphire crystal with edge wrapping. This edge-wrapping material can greatly improve the lateral ASE effect.

Embodiment 3

[0019] According to the molecular formula Cr x , Fe y ,Cu z :Al 2(1-x-y-z) o 3 Carry out raw material ratio, take values ​​x=0.05, y=0.02, z=0.01, weigh ultrafine alumina, chromium oxide, iron oxide, copper oxide powder, mix by ball mill; prepare powder by tape casting Form a film, and then wrap the above film around the large-diameter titanium-doped sapphire crystal to form an edge, and the thickness of the edge is 3 mm as required. Put the edge-wrapped sample into a vacuum sintering furnace, raise the temperature to 1700° C., and keep it warm for 20 hours to obtain a large-diameter titanium-doped sapphire crystal with edge wrapping. This edge-wrapping material can greatly improve the lateral ASE effect.

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PUM

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Abstract

The invention provides an edge covering method for large-diameter titanium-doped sapphire crystals. The edge covering method mainly comprises the step of by employing the edge covering technique for aluminum oxide ceramics doped with transition metal ions such as chromium, iron and copper and by a ceramic sintering process, growing rare-earth ion doped aluminum oxide ceramic grains along the titanium-doped sapphire crystals, so that the titanium-doped sapphire crystals are combined with the ceramic edge covering material. Simultaneously, the ASE (Amplified Spontaneous Emission) effect of the large-diameter titanium-doped sapphire crystals is inhibited by virtue of absorption of transition metal ions such as chromium, iron and copper to light about 800 nm. The edge covering method for the large-diameter titanium-doped sapphire crystals is adopted, so that the influence of the ASE effect on laser amplification is greatly reduced; and as a result, the peak power of a titanium-doped sapphire crystal solid laser device is improved.

Description

technical field [0001] The invention relates to a high-power solid-state laser, in particular to a large-diameter titanium-doped sapphire crystal wrapping method. Background technique [0002] In a high-power solid-state laser device using titanium-doped sapphire crystal as the gain medium, in order to obtain high-energy laser pulse output, it is necessary to use a titanium-doped sapphire crystal with a large diameter and high doping concentration of active ions, but such a titanium-doped sapphire crystal is easier The transverse spontaneous emission amplification effect (ASE) is generated. The existence of this effect makes laser amplification very difficult, and it has also become a technical bottleneck for improving the gain of titanium-doped sapphire crystal solid-state lasers. [0003] The existing technology mainly relies on organic ink or hot-melt resin doped with carbon powder to make hemming materials for hemming treatment. The hemming materials used are all organic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/00C23C24/10
Inventor 姜本学张龙范金太毛小建司继良
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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