Copper indium gallium selenium solar battery device and preparing method thereof

Abstract

A copper indium gallium selenium solar battery device is a copper indium gallium selenium solar battery based on a polyimide film-soda glass recombination substrate. The copper indium gallium selenium solar battery device is composed of glass, polyimide, a molybdenum back contacting layer, a copper indium gallium selenium absorbing layer, a cadmium sulfide buffering layer, a transparent window layer high resistance eigen zinc oxide thin film, a transparent window low resistance zinc oxide aluminum thin film and an aluminum top electrode, and a lamination structure is formed. A preparing method comprises the first step of coating the surface of the glass by polyimide gum, wherein the polyimide film-soda glass recombination substrate is formed in a solidifying mode, the second step of preparing all thin films on the surface of the polyimide film-soda glass recombination substrate sequentially, and the third step of separating the complete copper indium gallium selenium solar battery and the soda glass substrate after the complete copper indium gallium selenium solar battery is prepared. The soft copper indium gallium selenium solar battery with the polyimide film as the substrate is obtained. The copper indium gallium selenium solar battery device has the advantages that a copper indium gallium selenium thin film crystal based on the polyimide film-soda glass recombination substrate is large in grain; according to the preparing method of the copper indium gallium selenium solar battery device, the soft battery is prepared through the rigidity substrate, the method is easy to implement, and large-scale popularization and application are facilitated.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells, in particular to a copper indium gallium selenium solar cell device based on a polyimide film-soda glass composite substrate and a preparation method thereof. Background technique [0002] Copper indium gallium selenide (CIGS) belongs to group I-III-VI quaternary compound semiconductors and has a chalcopyrite crystal structure. Since the appearance of copper indium gallium selenide thin film solar cells in the 1970s, it has developed very rapidly and will gradually realize industrialization. This battery has the following characteristics: 1) The bandgap width of CIGS can be adjusted in the range of 1.04eV-1.67eV; 2) CIGS is a direct bandgap semiconductor with an absorption coefficient of up to 10 for visible light 5 cm -1 , the thickness of the copper indium gallium selenide absorbing layer is only 1.5-2.5 μm, and the thickness of the whole battery is 3-4 μm; 3) Strong radiation ...

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Problems solved by technology

As a result, the grown film has poor crystal quality, fine grains, and many defects, which increases the recombination of carriers, shortens the life of minority carriers, and affects battery performance.

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