Copper indium gallium selenium solar battery device and preparing method thereof

A technology of copper indium gallium selenide and solar cells, which is applied to electrical components, semiconductor devices, circuits, etc., can solve the problems of increased carrier recombination, poor film crystal quality, and many defects, and achieve improved roughness and good crystal quality , not easily deformed

Active Publication Date: 2013-10-09
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, the grown film has poor crystal quality, fine grains, and many defects, which increases t

Method used

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  • Copper indium gallium selenium solar battery device and preparing method thereof

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Embodiment 1

[0044] A copper indium gallium selenide solar cell device is a copper indium gallium selenide solar cell based on a polyimide film-soda glass composite substrate, such as figure 1 As shown, it consists of glass, polyimide, molybdenum back contact layer, copper indium gallium selenide absorber layer, cadmium sulfide buffer layer, transparent window layer with high resistance intrinsic zinc oxide film, transparent window layer with low resistance zinc aluminum oxide film and aluminum The upper electrode is composed and forms a laminated structure, wherein the substrate is composed of soda glass and a polyimide film grown on its surface, the thickness of the soda glass is 2 mm, and the thickness of the polyimide film is 25 μm; the molybdenum back contact layer includes a high The resistance layer film and the low resistance layer film, wherein the thickness of the high resistance layer film is 100nm, and the thickness of the low resistance layer film is 600nm; the chemical molecul...

Embodiment 2

[0071] A copper indium gallium selenide solar cell device is a copper indium gallium selenide solar cell based on a polyimide film-soda glass composite substrate, such as figure 1 As shown, it consists of glass, polyimide, molybdenum back contact layer, copper indium gallium selenide absorber layer, cadmium sulfide buffer layer, transparent window layer with high resistance intrinsic zinc oxide film, transparent window layer with low resistance zinc aluminum oxide film and aluminum The upper electrode is composed and forms a laminated structure, wherein the substrate is composed of soda glass and polyimide film grown on its surface, the thickness of the soda glass is 2mm, and the thickness of the polyimide film is 30μm; the molybdenum back contact layer includes high The resistance layer film and the low resistance layer film, wherein the thickness of the high resistance layer film is 100nm, and the thickness of the low resistance layer film is 700nm; the chemical molecular for...

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Abstract

A copper indium gallium selenium solar battery device is a copper indium gallium selenium solar battery based on a polyimide film-soda glass recombination substrate. The copper indium gallium selenium solar battery device is composed of glass, polyimide, a molybdenum back contacting layer, a copper indium gallium selenium absorbing layer, a cadmium sulfide buffering layer, a transparent window layer high resistance eigen zinc oxide thin film, a transparent window low resistance zinc oxide aluminum thin film and an aluminum top electrode, and a lamination structure is formed. A preparing method comprises the first step of coating the surface of the glass by polyimide gum, wherein the polyimide film-soda glass recombination substrate is formed in a solidifying mode, the second step of preparing all thin films on the surface of the polyimide film-soda glass recombination substrate sequentially, and the third step of separating the complete copper indium gallium selenium solar battery and the soda glass substrate after the complete copper indium gallium selenium solar battery is prepared. The soft copper indium gallium selenium solar battery with the polyimide film as the substrate is obtained. The copper indium gallium selenium solar battery device has the advantages that a copper indium gallium selenium thin film crystal based on the polyimide film-soda glass recombination substrate is large in grain; according to the preparing method of the copper indium gallium selenium solar battery device, the soft battery is prepared through the rigidity substrate, the method is easy to implement, and large-scale popularization and application are facilitated.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells, in particular to a copper indium gallium selenium solar cell device based on a polyimide film-soda glass composite substrate and a preparation method thereof. Background technique [0002] Copper indium gallium selenide (CIGS) belongs to group I-III-VI quaternary compound semiconductors and has a chalcopyrite crystal structure. Since the appearance of copper indium gallium selenide thin film solar cells in the 1970s, it has developed very rapidly and will gradually realize industrialization. This battery has the following characteristics: 1) The bandgap width of CIGS can be adjusted in the range of 1.04eV-1.67eV; 2) CIGS is a direct bandgap semiconductor with an absorption coefficient of up to 10 for visible light 5 cm -1 , the thickness of the copper indium gallium selenide absorbing layer is only 1.5-2.5 μm, and the thickness of the whole battery is 3-4 μm; 3) Strong radiation ...

Claims

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Application Information

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IPC IPC(8): H01L31/0749H01L31/02H01L31/18
CPCY02E10/541Y02P70/50
Inventor 薛玉明张嘉伟赵彦民乔在祥李微许楠冯少君刘浩尹富红朱亚东潘宏刚宋殿友李鹏海刘君
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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