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Polycrystalline silicon/monocrystalline silicon heterojunction structure applied to solar cell and preparation method thereof

A technology of solar cells and polysilicon, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as unfavorable mastery, high process requirements, failure to break the monopoly position of solar cells, etc., to reduce storage time, wide selection range, save energy effect

Active Publication Date: 2014-02-19
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem is that the process requires high technology and is not suitable for mastering. So far, it has not broken the monopoly position of conventional diffusion solar cells.

Method used

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  • Polycrystalline silicon/monocrystalline silicon heterojunction structure applied to solar cell and preparation method thereof
  • Polycrystalline silicon/monocrystalline silicon heterojunction structure applied to solar cell and preparation method thereof
  • Polycrystalline silicon/monocrystalline silicon heterojunction structure applied to solar cell and preparation method thereof

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Effect test

Embodiment 1

[0021] A uniformly doped polysilicon thin film / single crystal silicon heterojunction structure for solar cells such as figure 1 As shown, the distribution of doping elements phosphorus (P) and boron (B) is as follows figure 2 As shown, the p-type silicon wafer is used as an example for illustration here, but the silicon wafer is not limited to this, n-type silicon wafers can also be used, but the emitter doping type, process method, etc. need to be adjusted. Necessary illustrations are carried out to the structure and its preparation method below:

[0022] 1) For the uniformly doped polysilicon thin film 1 of the emitter, the doping concentration of this layer is 2×10 18 cm -3 , the thickness can be adjusted between 10 and 500 nm, and 100 nm is selected here.

[0023] 2) The preparation method of this layer can adopt the following process flow, but not limited thereto. First, one side of the monocrystalline silicon wafer 2 that needs to be deposited is cleaned as necessa...

Embodiment 2

[0025] A polysilicon thin film / single crystal silicon heterojunction structure with double layers of different doping concentrations for solar cells such as image 3 As shown, the distribution of doping elements phosphorus (P) and boron (B) is as follows Figure 4 shown. Here, the p-type silicon wafer is taken as an example for illustration, but the silicon wafer is not limited to this, n-type silicon wafers can also be used, but the emitter doping type, process method, etc. need to be adjusted. Necessary illustrations are carried out to the structure and its preparation method below:

[0026] 1) The doping concentration of the polysilicon thin film 3 with high doping concentration is 2×10 19 cm -3 , and the thickness can vary between 3 and 50 nm, which is selected as 10 nm here; the doping concentration of the polysilicon thin film 4 with low doping concentration is 1×10 18 cm -3 , the thickness can vary from 20 to 500 nm, here is selected as 100 nm;

[0027] 2) The pr...

Embodiment 3

[0029] A patterned high-doped polysilicon thin film / low-doped polysilicon thin film / monocrystalline silicon heterojunction structure for solar cells such as Figure 5 As shown, the distribution of doping elements phosphorus (P) and boron (B) is as follows Figure 6 shown. Here, the p-type silicon wafer is taken as an example for illustration, but the silicon wafer is not limited to this, n-type silicon wafers can also be used, but the emitter doping type, process method, etc. need to be adjusted. Necessary illustrations are carried out to the structure and its preparation method below:

[0030] 1) The doping concentration of the patterned polysilicon film 5 with high doping concentration is 2×10 19 cm -3 , and the thickness can vary between 3 and 50 nm, which is selected as 10 nm here; the doping concentration of the polysilicon thin film 4 with low doping concentration is 1×10 18 cm -3 , the thickness can vary from 20 to 500 nm, here is selected as 100 nm;

[0031] Th...

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Abstract

The invention provides a polycrystalline silicon / monocrystalline silicon heterojunction structure applied to a solar cell and a preparation method thereof. The structure of the polycrystalline silicon / monocrystalline silicon heterojunction structure applied to the solar cell is that a polycrystalline silicon film with an opposite doping type on a monocrystalline silicon wafer acts as an emitting electrode. The structure and the distribution of the thickness and the doping concentration of the polycrystalline silicon film are both adjustable. The preparation method of the polycrystalline silicon / monocrystalline silicon heterojunction structure applied to the solar cell comprises the steps that a doped amorphous or microcrystalline silicon film is deposited first by adopting a low-temperature vapor deposition method, and then rapid thermal processing and crystallization are carried out. According to the preparation method provided by the invention, a more flexible crystalline silicon solar cell pn-junction structure can be acquired, thereby providing space for further improving the structure and the process of crystalline silicon solar cell devices and improving the conversion efficiency thereof.

Description

technical field [0001] The invention relates to a structure and a preparation method of a solar cell material, in particular to a polycrystalline silicon / single crystal silicon heterojunction structure and a preparation method thereof for a solar cell. Background technique [0002] Solar power generation is one of the most important renewable and clean energy utilization methods for human beings. Among them, crystalline silicon solar cells have attracted widespread attention due to their abundant raw material sources and relatively mature preparation technologies, and are the mainstream product category of solar cells. [0003] Crystalline silicon solar cells are currently the mainstream category of solar photovoltaic power generation products, and their structures are divided into homojunction structures and heterojunction structures according to the similarities and differences of the constituent materials of the pn junction, the core of photoelectric conversion. The...

Claims

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Application Information

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IPC IPC(8): H01L31/074H01L31/18
CPCY02E10/50H01L31/074H01L31/1804H01L31/182Y02E10/546Y02E10/547Y02P70/50
Inventor 黄海宾周浪崔冶青高江
Owner NANCHANG UNIV
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