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Method for effectively improving Curie temperature of barium titanate-based dielectric material

A technology of dielectric material and Curie temperature is applied in the field of effectively increasing the Curie temperature of barium titanate-based dielectric materials, which can solve the problems of inappropriate addition amount and low dielectric constant at room temperature, and achieve the effect of increasing Curie temperature.

Inactive Publication Date: 2014-02-26
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Na 0.5 Bi 0.5 TiO 3 The Curie temperature of the material is very high (~320°C), but the room temperature dielectric constant is low (~300). 0.5 Bi 0.5 TiO 3 The amount of addition should not be too much (not greater than BaTiO 3 20% of the mass), and the existing research work generally can only increase the Curie temperature to below 170 °C

Method used

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  • Method for effectively improving Curie temperature of barium titanate-based dielectric material
  • Method for effectively improving Curie temperature of barium titanate-based dielectric material
  • Method for effectively improving Curie temperature of barium titanate-based dielectric material

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Embodiment 1

[0016] 2.5013g Na 2 CO 3 , 7.5393g TiO 2 and 10.4468g Bi 2 o 3 Mix ball milling for 4 hours, dry, sieve, and calcinate at 950°C to obtain sodium bismuth titanate; mix 15g BaTiO 3 Mix 2.4048g sodium bismuth titanate with deionized water and ball mill for 4 hours, add 7% paraffin after drying, sieve and granulate; the powder after granulation is pressed into a green disc, and after 3.5 hours Raise the temperature to 550°C to expel the wax, raise the temperature to 1225°C for 1.5h to sinter, and keep the temperature for 1 hour to prepare the barium titanate-based dielectric material.

[0017] The upper and lower surfaces of the obtained barium titanate-based dielectric material are evenly coated with silver paste, and the electrode is prepared by firing at 850° C. to prepare a multilayer ceramic capacitor. Curie temperature and room temperature dielectric constant of embodiment 1 are shown in table 1.

Embodiment 2

[0019] 2.5013g Na 2 CO 3 , 7.5393g TiO 2 and 9.8970g Bi 2 o 3 Mix ball milling for 4 hours, dry, sieve, and calcinate at 950°C to obtain sodium bismuth titanate; mix 15g BaTiO 3 Mix 2.4048g sodium bismuth titanate with deionized water and ball mill for 4 hours, add 7% paraffin after drying, sieve and granulate; the powder after granulation is pressed into a green disc, and after 3.5 hours Raise the temperature to 550°C to expel the wax, raise the temperature to 1225°C for 1.5h to sinter, and keep the temperature for 1 hour to prepare the barium titanate-based dielectric material.

[0020] The upper and lower surfaces of the obtained barium titanate-based dielectric material are evenly coated with silver paste, and the electrode is prepared by firing at 850° C. to prepare a multilayer ceramic capacitor. Curie temperature and room temperature dielectric constant of embodiment 2 are shown in table 1.

Embodiment 3

[0022] 2.5013g Na 2 CO 3 , 7.5393g TiO 2 and 9.3472g Bi 2 o 3 Mix ball milling for 4 hours, dry, sieve, and calcinate at 950°C to obtain sodium bismuth titanate; mix 15g BaTiO 3 Mix 2.4048g sodium bismuth titanate with deionized water and ball mill for 4 hours, add 7% paraffin after drying, sieve and granulate; the powder after granulation is pressed into a green disc, and after 3.5 hours Raise the temperature to 550°C to expel the wax, raise the temperature to 1225°C for 1.5h to sinter, and keep the temperature for 1 hour to prepare the barium titanate-based dielectric material.

[0023] The upper and lower surfaces of the obtained barium titanate-based dielectric material are evenly coated with silver paste, and the electrode is prepared by firing at 850° C. to prepare a multilayer ceramic capacitor. Curie temperature and room temperature dielectric constant of embodiment 3 are shown in table 1.

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Abstract

The invention discloses a method for effectively improving Curie temperature of a barium titanate-based dielectric material. The method comprises the following steps: batching Na2CO3, Bi2O3 and TiO2 according to a molar ratio of 1:(0.95-0.65):2, performing ball-milling, drying, calcining at the temperature of 950 DEG C, preparing sodium bismuth titanate powder, adding the sodium bismuth titanate powder into barium titanate according to 15-20 weight percent, ball-milling, screening and pelleting, pressing into a green body, sintering at the temperature of 1200-1240 DEG C, and preparing the barium titanate-based dielectric material. The Curie temperature of the barium titanate-based dielectric material can be effectively improved (the highest Curie temperature can be 200 DEG C), so that a multiplayer ceramic chip capacitor can keep stable dielectric property in a high-temperature environment of more than 150 DEG C).

Description

technical field [0001] The invention belongs to a ceramic composition characterized by components, in particular to a method capable of effectively increasing the Curie temperature of a barium titanate-based dielectric material. Background technique [0002] Barium titanate (BaTiO 3 )-based dielectric materials are widely used in the preparation of chip multilayer ceramic capacitors (Multilayer Ceramic Capacitors, MLCC for short) because of their advantages such as high dielectric constant and no toxic elements such as lead and cadmium. As a basic electronic component, MLCC is widely used in civil products and consumer electronics such as smartphones, tablet computers, radio and television, mobile communications, home computers, household appliances, measuring instruments, and medical equipment. It is also widely used in aerospace, tank electronics, Military electronic equipment such as military mobile communication, weapon warhead control and military signal monitoring, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/486C04B35/622
Inventor 李玲霞王鸣婧柳亚然陈俊晓张宁
Owner TIANJIN UNIV
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