Manufacturing method of PIN-type isotope nuclear battery including niobium-doped n-type SiC epitaxial layer

Abstract

The invention discloses a manufacturing method of a silicon carbide schottky junction type nuclear battery including a niobium-doped n-type epitaxial layer. The battery comprises a radioactive isotope source layer 1, a SiO2 passivation layer 2, a SiO2 compact insulating layer 3, a p-type contact electrode 4, a p-type SiC epitaxial layer 5, an n-type SiC epitaxial layer 6, an n-type SiC substrate 7 and an n-type ohmic contact substrate 8. The manufacturing method comprises the steps of injecting 2000KeV-2500KeV energy for the initial n-type SiC epitaxial layer, injecting 5*1013-1*1015cm-2 niobium ions, then performing thermal annealing at the high temperature of 1450-1650 DEG C for 20-40 minutes and further obtaining the n-type SiC epitaxial layer with the 1*1013-5*1014cm-3 dosage concentration. By adopting the manufacturing method, the carrier concentration of an intrinsic layer is reduced, the depletion region width is increased, the collection efficiency of produced electron hole pairs is improved, and further the open-circuit voltage and energy conversion efficiency of a device is improved.

Description

technical field [0001] The invention relates to the intersection field of nuclear science and technology and microelectronic technology, in particular to a manufacturing method of a PIN type isotope nuclear battery. technical background [0002] In 1953, it was discovered that β particles produced by isotope decay can generate electron-hole pairs in semiconductors, and this phenomenon is called β voltage effect. In 1957, people first applied the β voltage effect to the power supply, and successfully manufactured the first isotope micro-battery. Since 1989, GaN, GaP, AlGaAs, polysilicon and other materials have been used as materials for β-Voltaic batteries. With the preparation of the wide bandgap semiconductor material SiC and the advancement of process technology, since 2006, there have been reports on SiC-based isotope micro-batteries at home and abroad. [0003] In 2006, Chandrashekhar et al. of Cornell University in New York proposed a silicon carbide PIN junction iso...

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Problems solved by technology

In this structure, the substrate is an n-type highly doped substrate, and the process of growing an epitaxial layer on it is immature, which easily introduces surface defects, increases device leakage current, and has a low energy conversion rate. At the same time, p-type low-doped The SiC layer is formed by unintentional doping epitaxial growth, the doping concentration is too high, the width of the depletion region obtained is too small, the generated carriers cannot be collected completely, the open circuit voltage of the device becomes smaller, and the energy conversion efficiency decreases

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