Preparation method for fluorine-doped graphene material

A graphene and fluorine-doped technology, which is applied in the field of preparation of fluorine-doped graphene materials, can solve the problems of inconvenient application or modification, high preparation cost, complicated process, etc., and achieves easy large-scale industrial production and simple preparation steps , High operational controllability

Inactive Publication Date: 2014-04-23
CHINA UNIV OF MINING & TECH
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Problems solved by technology

[0003] The present invention mainly aims at the deficiencies of the prior art, and provides a preparation method of fluorine-doped graphene material, which solves the problem that the production quantity of the existing preparation method is extremely limited, and it is difficult to scale up; the preparation cost is high, the process is complicated, and it is difficult to industrialize; the product High oxygen content, causing inconvenient problems for further application or modification

Method used

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  • Preparation method for fluorine-doped graphene material
  • Preparation method for fluorine-doped graphene material
  • Preparation method for fluorine-doped graphene material

Examples

Experimental program
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Effect test

Embodiment 1

[0016] Embodiment 1: Preparation and characterization of fluorine-doped graphene material;

[0017] Put 1.0 g of polyvinylidene fluoride powder into a corundum crucible, and move the corundum crucible into a tube furnace, raise the temperature to 600 °C at a rate of 5 °C / min in an argon atmosphere, and at 600 °C After sintering for 3 hours, the fluorine-doped graphene product is obtained.

[0018] The product was identified as a graphite phase (such as figure 1 ); characterized by Raman spectroscopy as a graphitic phase (e.g. figure 2 ); JEM 1011 transmission electron micrograph ( image 3 ) and high-resolution electron microscope photos ( Figure 4 ) indicates that the obtained product is a curly film-like substance with a thickness mainly distributed in the range of about 2-4 nm.

Embodiment 2

[0019] Example 2: Put 1.0 g of polytetrafluoroethylene powder into a corundum crucible, move the corundum crucible into a tube furnace, raise the temperature to 650 °C at a rate of 5 °C / min under an argon atmosphere, and Sinter at 650°C for 3 hours to obtain fluorine-doped graphene products.

[0020] The obtained product is curly film-like graphene with a small number of layers, and the thickness is mainly distributed in 3-6 nanometers.

Embodiment 3

[0021] Example 3: Put 1.0 g of polyvinylidene fluoride powder into a corundum crucible, and move the corundum crucible into a tube furnace, raise the temperature to 650 °C at a rate of 5 °C / min under a nitrogen atmosphere, and heat it at 650 °C Sintering at ℃ for 3 hours to obtain fluorine and nitrogen doped graphene products.

[0022] The obtained product is curly film-like graphene with a small number of layers, and the thickness is mainly distributed in 3-6 nanometers.

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Abstract

The invention provides a preparation method for a fluorine-doped graphene material and belongs to methods for preparing fluorine-doped graphene through high-temperature carbonization. The method comprises the following steps: a fluorine-containing high polymer material is put into a corundum crucible and placed inside a high-temperature reaction container,and under a certain gas atmosphere, sintering is performed for 1 to 8 hours under the condition of 300 to 900 DEG C according to a specific temperature rate, so that a fluorine-doped graphene product is obtained. The fluorine-containing high polymer material is adopted as a raw material, and the fluorine-doped graphene material is prepared through a one-step high-temperature carbonization method, the used raw material is low in cost and easy to obtain, the preparation steps are simple, the operation controllability is high, the obtained product mainly comprises fluorine-doped graphene with low slice number (2 to 10 nanometers), and large-scale industrial production is easier. In addition, the production is performed under the environment of non-oxidizing atmospheres through the method, the content of oxygen in the target object of graphene can be effectively reduced, and the fluorine-doped graphene material has high potential for being used widely in the fields of new-energy lithium ion batteries, catalysis, optics, electrochemistry and the like.

Description

technical field [0001] The invention relates to a method for preparing fluorine-doped graphene by high-temperature carbonization, in particular to a method for preparing a fluorine-doped graphene material. Background technique [0002] The traditional graphene material is a two-dimensional structural material of a single layer or a small number of layers of carbon exfoliated from a flaky graphite material. Because graphene is atomically thick, it has excellent electrical properties, excellent chemical and thermodynamic stability, which makes it important in the fields of nanoelectronics, new energy storage, catalysis, adsorption and environmental protection. It has great application prospects and has become a research hotspot in international materials science. At present, graphene sheets with less than 10 layers can be called graphene, and most of the prepared graphene sheets have 3-8 layers. So far, a variety of methods for preparing graphene have been developed, such as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/184
Inventor 鞠治成邢政
Owner CHINA UNIV OF MINING & TECH
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