All-solid-state film electrochromic glass and preparation method thereof

An electrochromic glass, all-solid-state technology, applied in chemical instruments and methods, glass/slag layered products, layered products, etc., can solve the problem of unsatisfactory service life and coloring stability, complicated preparation process control, easy ion Diffusion and other problems occur, to achieve the effect of facilitating the production process, reducing production costs and increasing stability

Active Publication Date: 2014-05-07
CSG HOLDING
View PDF7 Cites 55 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the existing electrochromic glass, the ion conductor layer and the ion storage layer are mostly made of liquid electrolyte and organic polymer electrolyte, which have a certain corrosion effect on the adjacent film layer, and the ion is easy to diffuse. Therefore

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • All-solid-state film electrochromic glass and preparation method thereof
  • All-solid-state film electrochromic glass and preparation method thereof
  • All-solid-state film electrochromic glass and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The film layer structure of the all-solid-state thin-film electrochromic glass is to sequentially form silicon dioxide (SiO 2 ) layer, indium tin oxide (ITO) layer, tungsten oxide (WO 3 ) layer, lithium phosphate nitride (LiPON) layer, lithium cobalt oxide (LiCoO 2 ) layer, indium tin oxide (ITO) layer, silicon nitride (Si 3 N 4 )Floor.

[0029] Its manufacturing process is as follows.

[0030] 6mm ultra-clear glass is washed and dried with pure water and then enters the vacuum coating chamber.

[0031] Intermediate frequency reaction magnetron sputtering silicon oxide target to prepare silicon dioxide layer: set power 30KW, sputtering voltage 450V, pure argon sputtering, gas pressure 3×10 -4 mbar, film thickness 30nm.

[0032] Indium tin oxide layer prepared by magnetron sputtering rotating indium tin oxide target with DC plus pulse power supply: pulse working voltage 800V, DC voltage 180V, pulse frequency 40KHz, set power 60KW, pure argon sputtering, air pressur...

Embodiment 2

[0040] The film structure of the all-solid-state thin-film electrochromic glass is to sequentially form silicon nitride (Si 3 N 4 ) layer, lithium-silver alloy (AgLi) layer, nickel-chromium alloy (NiCr) layer, tungsten oxide (WO 3 ) layer, lithium phosphate nitride (LiPON) layer, lithium cobalt oxide (LiCoO 2 ) layer and low-emissivity (Low-e) composite layer.

[0041] Its manufacturing process is as follows.

[0042] 6mm ultra-clear glass is washed and dried with pure water and then enters the vacuum coating chamber.

[0043] The silicon nitride dielectric layer is deposited by sputtering in an argon-nitrogen atmosphere with an intermediate frequency power supply and a rotating cathode: the vacuum magnetron sputtering equipment is 80-90KW, the frequency of the intermediate frequency power supply is 40KHz, and the thickness is 30nm.

[0044] Magnetron sputtering metallic lithium-silver alloy target to prepare AgLi conductive layer with a thickness of 15nm.

[0045] Prepar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention relates to an all-solid-state film electrochromic glass, which comprises a substrate, an ion blocking layer, a first transparent conductive layer, an inorganic discolored layer, an inorganic ion conductor layer, an inorganic ion storage layer, a second transparent conductive layer and a protective layer, wherein the ion blocking layer, the first transparent conductive layer, the inorganic discolored layer, the inorganic ion conductor layer, the inorganic ion storage layer, the second transparent conductive layer and the protective layer are sequentially formed on the substrate through a vapor deposition method. The present invention further provides a preparation method for the all-solid-state film electrochromic glass. The all-solid-state film electrochromic glass has advantages of electrochromic energy-saving glass stability increase and manufacturing process simplifying.

Description

technical field [0001] The invention relates to an energy-saving glass and a preparation method thereof, in particular to an all-solid thin-film electrochromic glass and a preparation method thereof. Background technique [0002] Electrochromic (Electrochromic, EC) refers to the phenomenon that the optical properties of materials undergo continuous and reversible changes under the action of an external electric field, which is intuitively manifested as a process in which the color and transparency of materials undergo reversible changes. Electrochromic glass can selectively absorb or reflect external heat radiation and prevent internal heat diffusion, reducing the large amount of energy that office buildings and residential buildings must consume to keep cool in summer and warm in winter. The electrochromic energy-saving window made of electrochromic glass can realize the sub-band automatic regulation of light and heat in almost all bands related to comfort and energy saving...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C03C17/34C03C17/36B32B17/06
Inventor 王小峰吕宜超唐晶崔平生曾小绵赵鹏
Owner CSG HOLDING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap