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Method for non-vacuum preparation of nano thin film by taking metallic compound as precursor

A metal compound and nano-film technology, which is applied in the field of vacuum preparation of nano-film, can solve the problems of low yield of metal compound film, cannot meet industrial production, and the preparation process is not very mature, and achieves good grain growth, large diameter, and high quality of the film. good film quality

Active Publication Date: 2014-05-07
上海先着点光电科技有限公司
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Problems solved by technology

However, the current preparation technology of metal compound films is not very mature, and the output of prepared metal compound films is low, which cannot meet the needs of industrial production.

Method used

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  • Method for non-vacuum preparation of nano thin film by taking metallic compound as precursor

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Embodiment Construction

[0030] The invention discloses a method for non-vacuum preparation of a nano film using a metal compound as a precursor, which includes the following steps:

[0031] S1. The mass fraction is 40% of the metal particle powder with a particle size of 500-700nm, and the mass fraction of 60% of the metal particle powder with a particle size of 44-48 μm is prepared into a mass fraction of 30-40% metal particle liquid: Put the metal particles into a jet mill for dry grinding for 1-4 hours, classify at a speed of 3500 rpm, ultrasonically clean and dry for 15 minutes to obtain powder metal particles with D50=5 μm and D97=60 μm, and then classify into powders of 5-10 μm body, dissolving the powdered metal particles in deionized water with a mass fraction of 60-70%, ultrasonically stirring and shaking, and separating for 20-30 minutes to obtain a 5-10 μm metal powder solution for later use.

[0032] Jet mill parameters: The compressed air flow rate in the jet mill is 60m / min, the pressur...

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Abstract

The invention discloses a method for non-vacuum preparation of a nano thin film by taking a metallic compound as a precursor. The method comprises the steps of S1. preparing a metallic nano mixing solution; S2. preparing a graphite and superconductive carbon black mixing solution; S3. preparing acrylic photosensitive bisphenol A modified epoxy resin; S4. adding a reactive diluent and the like to the acrylic photosensitive bisphenol A modified epoxy resin; S5. continuing adding other materials to the acrylic photosensitive bisphenol A modified epoxy resin; S6. centrifuging; S7. coating; and S8. recoating and curing. According to the preparation method of the metallic compound thin film, which is disclosed by the invention, a non-vacuum precursor 'ink' offset printing spraying method is adopted to spray the precursor on an elastic substrate to form a metallic absorbed layer thin film; by means of a spray conversion method, dosages of raw materials and additive are easily controlled, ingredients, thickness and uniformity of the film can be conveniently controlled, and full use of addition of the superconductive carbon black and graphite can be achieved; the prepared product is low in granularity, high in bulk crystallization density, and capable of effectively improving a forbidden gap.

Description

technical field [0001] The invention relates to the technical field of compound preparation, in particular to a method for non-vacuum preparation of a nanometer film using a metal compound as a precursor. Background technique [0002] Metal compound conductive ink and film can be used as a conductive material, which has a wide range of uses. For example, it can be applied to PV solar cell components, TP touch screen, RFID radio frequency identification electronic tags, automotive electronics, electronic paper, LED, TR, IC, PCB, FPC, CSP, FC, VFD, ITO, EL cold light film, CMOS mold Group, LCM module, PFD flat panel display, LCD liquid crystal display, PDP plasma display, OLED organic electroluminescent display, membrane switch, keyboard, sensor, optoelectronic device, communication electronics, microwave communication, medical electronics, passive device, thick film Circuits, piezoelectric crystals, integrated circuits and other fields. However, the current preparation proc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08J7/12C08J3/28C08L63/10C08K3/08
Inventor 王旭刘太生王锦田瑞岩谢士兴
Owner 上海先着点光电科技有限公司
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