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The method of non-vacuum preparation of nanometer film with metal compound as precursor

A metal compound and nano-film technology, which is applied in the field of vacuum preparation of nano-film, can solve the problems that cannot meet industrial production, the preparation process is not very mature, and the output of metal compound film is low, so as to achieve good film grain growth and good film quality , the effect of large diameter

Active Publication Date: 2017-08-04
上海先着点光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the current preparation technology of metal compound films is not very mature, and the output of prepared metal compound films is low, which cannot meet the needs of industrial production.

Method used

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  • The method of non-vacuum preparation of nanometer film with metal compound as precursor

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Embodiment Construction

[0030] The present invention discloses a non-vacuum preparation method of nano film by using a metal compound as a precursor, which comprises the following steps:

[0031] S1. Prepare a mass fraction of 40% metal particle powder with a particle size of 500-700nm and a mass fraction of 60% metal particle powder with a particle size of 44-48μm into a metal particle liquid with a mass fraction of 30-40%: Put the metal particles into a jet mill for dry grinding for 1-4 hours, with a classification speed of 3500 rpm, ultrasonic cleaning, and drying for 15 minutes to obtain powder metal particles with D50 = 5 μm and D97 = 60 μm, and then classify 5-10 μm powder The powder metal particles are dissolved in 60-70% deionized water with a mass fraction of 60-70% deionized water, ultrasonically stirred, shaken, and separated for 20-30 minutes to obtain a 5-10 μm metal powder solution for later use.

[0032] Parameters of jet mill: The compressed air flow rate in jet mill is 60m / min, the pressu...

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PUM

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Abstract

The invention discloses a method for non-vacuum preparation of a nano thin film by taking a metallic compound as a precursor. The method comprises the steps of S1. preparing a metallic nano mixing solution; S2. preparing a graphite and superconductive carbon black mixing solution; S3. preparing acrylic photosensitive bisphenol A modified epoxy resin; S4. adding a reactive diluent and the like to the acrylic photosensitive bisphenol A modified epoxy resin; S5. continuing adding other materials to the acrylic photosensitive bisphenol A modified epoxy resin; S6. centrifuging; S7. coating; and S8. recoating and curing. According to the preparation method of the metallic compound thin film, which is disclosed by the invention, a non-vacuum precursor 'ink' offset printing spraying method is adopted to spray the precursor on an elastic substrate to form a metallic absorbed layer thin film; by means of a spray conversion method, dosages of raw materials and additive are easily controlled, ingredients, thickness and uniformity of the film can be conveniently controlled, and full use of addition of the superconductive carbon black and graphite can be achieved; the prepared product is low in granularity, high in bulk crystallization density, and capable of effectively improving a forbidden gap.

Description

Technical field [0001] The invention relates to the technical field of compound preparation, in particular to a method for non-vacuum preparation of nano-films using metal compounds as precursors. Background technique [0002] Metal compound conductive ink and film can be used as a conductive material, which has a wide range of uses. For example, it can be applied to PV solar cell modules, TP touch screens, RFID radio frequency identification electronic tags, automotive electronics, electronic paper, LED, TR, IC, PCB, FPC, CSP, FC, VFD, ITO, EL cold light film, CMOS module Group, LCM module, PFD flat panel display, LCD liquid crystal display, PDP plasma display, OLED organic electroluminescence display, membrane switch, keyboard, sensor, optoelectronic device, communication electronics, microwave communication, medical electronics, passive devices, thick film Circuits, piezoelectric crystals, integrated circuits and other fields. However, the current preparation process of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/18C08J7/12C08J3/28C08L63/10C08K3/08
Inventor 王旭刘太生王锦田瑞岩谢士兴
Owner 上海先着点光电科技有限公司
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