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High-temperature nano-electrothermal film of double-film structure and preparation method thereof

A nano-electric heating film and double-layer film technology is applied in the field of semiconductor heating and infrared radiation, which can solve the problems of high power and low thermal efficiency, and achieve the effect of high safety factor, high thermal efficiency and shortening heating time.

Inactive Publication Date: 2014-05-14
UNIV OF SHANGHAI FOR SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Through the combination of heating basic materials and the optimization of process conditions, the electrothermal film prepared by the prior art can effectively overcome the defects of low working temperature, high required power, and low thermal efficiency. The electrothermal film prepared by the present invention can not only meet Working conditions of 1000°C, and can reach 98% thermal efficiency, the prepared electrothermal film has excellent performance

Method used

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  • High-temperature nano-electrothermal film of double-film structure and preparation method thereof
  • High-temperature nano-electrothermal film of double-film structure and preparation method thereof
  • High-temperature nano-electrothermal film of double-film structure and preparation method thereof

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Embodiment 1

[0024] A high-temperature nanometer electric heating film with a double-layer film structure, such as figure 1 As shown, it consists of a platinum alloy thin film electrode 1, a quartz substrate 2, a silicon carbide film layer 4, and a molybdenum disilicide film layer 5. The quartz substrate is a high temperature resistant quartz plate or quartz tube, or is shaped as a curved high temperature resistant quartz substrate.

[0025] The preparation method of the high-temperature nanometer electrothermal film of double-layer film structure, its steps are as follows:

[0026] Substrate cleaning: The quartz substrate is cleaned with an ultrasonic cleaner with an ultrasonic frequency of 20-50KHz. It is first cleaned in deionized water, and then cleaned in the order of acetone, absolute ethanol, and deionized water. Each cleaning time is 10-50KHz. 15 minutes; then take out the quartz substrate, blow off the water droplets on the surface with an ear washing ball, put it into an electri...

Embodiment 2

[0032] A high-temperature nanometer electric heating film with a double-layer film structure, such as figure 2 As shown, it consists of a cobalt-based alloy thin-film electrode 3 , a quartz substrate 2 , a silicon carbide film layer 4 , and a molybdenum disilicide film layer 5 . The quartz substrate is a high temperature resistant quartz plate or quartz tube, or is shaped as a curved high temperature resistant quartz substrate.

[0033] The preparation method of the high-temperature nanometer electrothermal film of double-layer film structure, its steps are as follows:

[0034] Substrate cleaning: The quartz substrate is cleaned with an ultrasonic cleaner with an ultrasonic frequency of 20-50KHz. It is first cleaned in deionized water, and then cleaned in the order of acetone, absolute ethanol, and deionized water. Each cleaning time is 10-50KHz. 15min. Then take out the substrate, blow off the water droplets on the surface with an ear washing ball, put it into an electric ...

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Abstract

A high-temperature nano-electrothermal film of a double-film structure is composed of a quartz substrate, an alloy film electrode and a silicon carbide and molybdenum disilicide composite film layer. By means of a method of magnetron sputtering, first the alloy film electrode is arranged on the quartz substrate in a mask sputtering mode, then a silicon carbide film layer and a molybdenum disilicide film layer sequentially deposit; finally, high temperature annealing is conducted, and the surface of the molybdenum disilicide film layer is oxidized into a thin silicon dioxide protective layer. The alloy film electrode is a platinum alloy film electrode or a cobalt-base alloy film electrode. Two types of high temperature nanometer materials including silicon carbide and molybdenum disilicide with the purity of 99.950% are adopted in the electrothermal film, the surface of the film layer is oxidized to a silicon dioxide polycrystalline structure, oxygen is isolated, the service life of the electrothermal film is effectively prolonged, and the safety factor is effectively improved. The advantages of the two materials are utilized by the high-temperature nano-electrothermal film, work temperature is as high as 1000 DEG C, meanwhile heat efficiency is 98% or so, and the high-temperature nano-electrothermal film can be widely applied to the technical field of high temperature heating and the like.

Description

technical field [0001] The invention relates to a high-temperature nanometer electrothermal film with a double-layer film structure and a preparation method thereof, belonging to the technical field of semiconductor heating and infrared radiation. Background technique [0002] With the increasing depletion of energy on the earth, energy conservation and emission reduction has become a topic of social concern, and it is particularly important to improve energy utilization. Common heating methods of electric water heaters on the market include resistance wire heating and electromagnetic radiation heating. For resistance wire heating, there are defects such as low thermal efficiency, low safety factor, high maintenance cost, and short life. Electromagnetic heating also has the defects of electromagnetic radiation harm to the human body and high cost. Therefore, many heating elements of electric heating film type have appeared. . It is a typical planar heating element, which h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B3/12H05B3/34C23C14/35B32B9/04
Inventor 李毅袁文瑞郑鸿柱陈少娟陈建坤孙瑶唐佳茵郝如龙刘飞方宝英王小华佟国香肖寒
Owner UNIV OF SHANGHAI FOR SCI & TECH
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