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Double-gate graphene transistor using aluminum oxide as gate dielectric and preparation method thereof

A technology of aluminum oxide and graphene, which is applied in the field of microelectronics, can solve problems such as growth, affecting device performance, and inability to play an insulating role, and achieve the effects of improving modulation, simplifying the manufacturing process, and suppressing scattering effects

Active Publication Date: 2016-06-29
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When its thickness is reduced to the nanometer level, through SiO 2 The leakage current increases exponentially as the thickness decreases, such a huge leakage current seriously affects the device performance, making SiO 2 Can not play an insulating role, eventually resulting in SiO 2 No longer suitable as gate dielectric for field effect transistor FET

Method used

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  • Double-gate graphene transistor using aluminum oxide as gate dielectric and preparation method thereof
  • Double-gate graphene transistor using aluminum oxide as gate dielectric and preparation method thereof
  • Double-gate graphene transistor using aluminum oxide as gate dielectric and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Step 1: Wash the 6H-SiC sample to remove surface contaminants such as Figure 4 (a).

[0039] (1.1) Use NH for 6H-SiC samples 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0040] (1.2) Use HCl+H on the 6H-SiC sample after removing the surface organic residues 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0041] Step 2: Deposit a layer of Al on the surface of the 6H-SiC sample 2 o 3 ,Such as Figure 4 (b).

[0042] (2.1) Put the SiC sample into the growth chamber, and flow N into the growth chamber with a flow rate of 10 sccm 2 Perform a 2-minute purge and repeat the cycle 5 times;

[0043] (2.2) Turn on the thermostat, heat the growth chamber to 250°C, and heat the gas path to 40°C for 60 minutes;

[0044] (2.3) Introduce N with a flow rate of 10 sccm into the growth chamber 2 A 2 min purge was pe...

Embodiment 2

[0072] Step 1: Clean the 4H-SiC sample to remove surface contaminants such as Figure 4 (a).

[0073] Use NH for 4H-SiC samples 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0074] Step 2: Deposit a layer of Al on the surface of the 4H-SiC sample 2 o 3 ,Such as Figure 4 (b).

[0075] 2a) Put the SiC sample into the growth chamber, and flow 10 sccm of N into the growth chamber 2 Perform a 2-minute purge and repeat the cycle 5 times;

[0076] 2b) Turn on the thermostat, heat the growth chamber to 250°C, and heat the gas path to 40°C for 60 minutes;

[0077] 2c) Flow 10 sccm of N into the growth chamber 2 A 2 min purge was performed and the cycle was repeated 3 times. Thereafter, the flow rate of 15 sccm of N was continuously passed into the growth cham...

Embodiment 3

[0095] Step A: Use NH on the 4H-SiC substrate substrate 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; use HCl+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove ionic contaminants such as Figure 4 (a).

[0096] Step B: Deposit a layer of Al on the surface of the 4H-SiC sample 2 o 3 film, such as Figure 4 (b)

[0097] B1) Put the SiC sample into the growth chamber, and flow 10 sccm of N into the growth chamber 2 Perform a 2-minute purge and repeat the cycle 5 times;

[0098] B2) Turn on the thermostat, heat the growth chamber to 250°C, and heat the air circuit to 40°C for 60 minutes;

[0099] B3) Infuse N with a flow rate of 10 sccm into the growth chamber 2 Carry out the purging of 2 minutes, repeat cycle 3 times, thereafter, feed the N that the flow rate is 15 sccm continuously to the growth chamber 2 ;

[0100] B4) Introduce wat...

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Abstract

The invention discloses a double-gate graphene transistor with aluminum oxide as gate dielectric and a manufacturing method thereof. The double-gate graphene transistor with the aluminum oxide as the gate dielectric mainly solves the problems of reduction of carrier mobility and carrier scattering in a graphene channel due to top grate dielectric of a graphene transistor in the manufacturing process in the prior art. The double-gate graphene transistor is structurally characterized in that two gate electrodes are arranged on the two sides of the graphene channel respectively to form a double-gate structure. The manufacturing method includes the first step of depositing a layer of aluminum oxide on the surface of a washed silicon carbide sample wafer and etching out a structural graph on the aluminum oxide layer, the second step of placing the etched sample wafer into a quartz tube, feeding carbon tetrachloride to react with silicon carbide to generate a carbon film, then placing the sample wafer into argon to carry out annealing to generate graphene and carrying out etching on the portions, 60-400 nanometers away from the two sides of the graphene channel, of the aluminum oxide layer to form gate grooves, and the third step of depositing metal on the sample wafer and etching the sample wafer to form a metal contact layer of the transistor. The double-gate graphene transistor manufactured through the method is capable of effectively improving the carrier mobility ratio and the modulation capacity of the gate electrodes on the channel current.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a method for preparing a semiconductor device, specifically using Al 2 o 3 The invention discloses a method for preparing a double-gate graphene transistor which is a gate dielectric, and can be used in the manufacture of large-scale integrated circuits. technical background [0002] As people's demand for high-performance, high-reliability, and low-power equipment increases, more and more attention is paid to the characteristics of devices on integrated circuits. Graphene, a material composed of a two-dimensional hexagonal carbon lattice, has been discovered since 2004 by two scientists, Andre Jem and Kostya Novo, from the University of Manchester, UK, due to its outstanding electrical structural properties. After Love discovered it, it was regarded as a candidate material for the manufacture of high-performance devices. [0003] In 2005, Geim's research group and Kim'...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/51H01L29/10H01L29/423H01L21/336H01L21/04H01L21/28
CPCH01L21/0242H01L21/02527H01L21/02603H01L29/1033H01L29/42356H01L29/517H01L29/66045H01L29/7831
Inventor 郭辉赵亚秋张玉明黄海栗雷天民胡彦飞
Owner XIDIAN UNIV
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