C-SiC catalyst, its preparation and its application thereof

A catalyst, c-sic technology, applied in hydrogen halide addition preparation, physical/chemical process catalysts, chemical instruments and methods, etc., can solve problems such as non-metallic catalysts that have not been reported in the application, to avoid pollution problems, cheap raw materials Easy to obtain, high catalytic activity effect

Active Publication Date: 2014-06-11
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the preparation of vinyl chloride by the acetylene method, the application of non-metallic catalysts has not been reported.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • C-SiC catalyst, its preparation and its application thereof
  • C-SiC catalyst, its preparation and its application thereof
  • C-SiC catalyst, its preparation and its application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Put 0.80g of SiC particles (40-60 mesh) into a tube furnace, and program the temperature up to 800°C under an Ar gas atmosphere, with a heating rate of 5°C / min, and then pass the CCl4 liquid through Ar gas bubbling. The flow rate of Ar was 50ml / min, and the inflow time was 2h, and then switched to pure Ar atmosphere to lower the temperature. The obtained sample was named C-SiC.

[0034] figure 1 In order to obtain the Raman characterization of the sample, the characteristic peaks of the carbon layer are shown in the Raman diagram: D peak and G peak, which prove the formation of the carbon layer.

[0035] figure 2 It is the adsorption-desorption curve of the prepared C-SiC sample, and its specific surface area is 181m 2 / g, proving that the generated carbon layer is a porous carbon layer.

Embodiment 2

[0037] Preparation of boron-doped B-C-SiC material: mix 1.2g C-SiC with B 2 o 3 mechanical mixing, B 2 o 3 The mass ratio to C-SiC is 1:3, placed in a high-temperature furnace, under an Ar gas atmosphere, the temperature is raised to 1100°C at a rate of 5°C / min, kept for 6h, and taken out with 30wt% NaOH after cooling down The solution was fully washed, suction filtered, and dried at 120°C, and the obtained sample was named B-C-SiC. image 3 It is the XPS spectrum of B-C-SiC, which proves that B atoms are successfully doped into the carbon layer skeleton, and the mass ratio of B atoms to the carbon layer is 1.3%.

Embodiment 3

[0039] Preparation of nitrogen-doped N-C-SiC material: 0.80 g of SiC particles (40-60 mesh) were placed in a tube furnace, and the temperature was programmed to rise to 800 ° C under an Ar gas atmosphere at a heating rate of 5 ° C / min, and then CCl 4 The liquid is fed in by bubbling Ar gas, the flow rate of Ar is 50ml / min, while CCl4 is fed in, NH3 is fed in from another channel at the same time, NH 3 The flow rate was 9ml / min, and the flow was continued for 2h, then switched to a pure He atmosphere to lower the temperature, and the obtained sample was named N-C-SiC. Figure 4 is the XPS spectrum of N-C-SiC, by Figure 4 It can be seen that N atoms are successfully doped like the carbon layer skeleton, and the mass ratio of N atoms to the carbon layer is 9.6%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
specific surface areaaaaaaaaaaa
Login to view more

Abstract

The invention discloses a novel non-metal catalyst used for preparing vinyl chloride by an acetylene method, a preparation method and an application thereof. The catalyst is a SiC-based composite material, by controlling the growth condition and post-treatment condition, a thin C layer with different morphology and chemical composition is grown on SiC, acetylene and hydrogen chloride are directly catalyzed to react for generating vinyl chloride, and high activity, stability and vinyl chloride selectivity of the catalyst can be presented. The C-SiC catalyst has the advantages that the nonmetal catalysis of vinyl chloride by the acetylene method can be realized, high pollution problem of a mercuric chloride catalyst on industry can be solved, usage of precious metal even a metal catalyst can be avoided, and the C-SiC catalyst has high environment benefit and economic value.

Description

technical field [0001] The invention relates to a non-metal catalyst for preparing vinyl chloride by acetylene method: C-SiC composite material and its synthesis and application. Background technique [0002] Polyvinyl chloride (PVC) is the second largest thermoplastic resin in the world and plays an important role in my country's national economic and social development. Vinyl chloride is an important monomer for the production of PVC. Due to the current situation of more coal, less oil and poor gas in our country, the main production route of vinyl chloride in my country is the acetylene method. The existing industrial acetylene hydrochlorination to prepare vinyl chloride mainly uses activated carbon as a mercuric chloride catalyst, but mercury resources are scarce in my country, and the toxicity and environmental pollution problems caused by the sublimation and loss of mercuric chloride catalyst It has become a serious problem that has plagued the production route of vin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/224C07C21/06C07C17/08
Inventor 包信和李星运潘秀莲
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap