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Preparation method of high-purity boron trifluoride-11

A technology of boron trifluoride and nitrogen trifluoride, which is applied in the field of preparation of high-purity boron trifluoride-11, can solve problems such as negative impact on the performance of semiconductor devices, crashes, and impact on the operating speed of electronic equipment, and achieve improved resistance Effects of interference and radiation immunity

Active Publication Date: 2015-11-04
方治文
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When natural boron compounds are used as dopant sources in the semiconductor device process, they need to be separated by a separator 11 B, then doped, but since natural boron contains about 19.78% 10 B isotopes, thus inevitably introducing large amounts of 10 Doping with B together, the result is that in some specific environments, it will have a fatal negative impact on the performance of semiconductor devices, ranging from affecting the operating speed of electronic equipment to causing crashes or even crashes.
[0004] With the increasing integration of integrated circuits, and many special applications such as aerospace, space probes, modern military, supercomputers, cloud computing, high-speed trains The requirements for the speed, stability, reliability, and safety of electronic equipment, such as communications, networks, etc., are constantly improving, and the performance requirements for semiconductor devices, the core devices of manufacturing-related facilities, are also getting higher and higher. Certain key semiconductor process-related materials It is not limited to the purity requirements in the general sense, but has risen to the concept of isotopic purity. Conventional natural materials can no longer meet the requirements of technological progress.

Method used

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  • Preparation method of high-purity boron trifluoride-11

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preparation example Construction

[0039] Such as figure 1 Shown, a kind of preparation method of high-purity boron trifluoride-11 comprises the following steps:

[0040] (i) Reactant pretreatment

[0041] Add boron oxide-11 into the reactor 2 through the feeder 3. After the reactor 2 is sealed and tested for leaks, a dry inert gas is passed into the reactor while heating to dry the reactants and the system. The reactant treatment temperature Maintain at 100°C to 200°C until the reactants and the system are fully dry, stop the ventilation when the water content of the gas outlet at the end of the detection system is less than 1ppm, and continue to heat the reactor 2 to the predetermined temperature between 200°C and 400°C;

[0042] (ii) Boron oxide-11 fluorination to synthesize boron trifluoride-11

[0043] Pass the fluorinating agent into the reactor 2 heated to a predetermined temperature, and react with the pre-loaded boron oxide-11 to obtain the target product boron trifluoride-11, accompanied by the gene...

Embodiment 1

[0067] (i) Reactant pretreatment

[0068] Add 5 kg of boron oxide-11 with a purity of not less than 99% and an abundance of boron-11 of 99% into the reactor 2 through the feeder 3, and after the reactor 2 is sealed and tested for leaks, heat the reactor while feeding Introduce high-purity nitrogen to dry boron oxide-11 and the system. At this time, the temperature is maintained at 100°C. After the reactants and the system are fully dried (the water content of the gas outlet at the end of the system is less than 1ppm), stop the ventilation and continue to heat the reactor. 2 to a predetermined temperature of 200°C;

[0069] (ii) Boron oxide-11 fluorination to synthesize boron trifluoride-11

[0070] Feed pure nitrogen trifluoride gas into the reactor 2 preheated to 200°C to react with pre-loaded boron oxide-11 to obtain crude boron trifluoride-11, accompanied by the generation of oxygen, nitrogen and trace hydrogen fluoride gas, The reaction temperature is controlled at 200±1...

Embodiment 2

[0081] (i) Reactant pretreatment

[0082] Add 5 kg of boron oxide-11 with a purity of not less than 99% and an abundance of boron-11 of 99% into the reactor 2 through the feeder 3, and after the reactor 2 is sealed and tested for leaks, heat the reactor while feeding Introduce high-purity argon to dry boron oxide-11 and the system. At this time, the temperature is maintained at 200°C. After the reactants and the system are fully dried (the water content of the gas outlet at the end of the system is less than 1ppm), stop the ventilation and continue the heating reaction. device 2 to a predetermined temperature of 300°C;

[0083] (ii) Boron oxide-11 fluorination to synthesize boron trifluoride-11

[0084] Into reactor 2 preheated to 300°C, feed nitrogen trifluoride and nitrogen gas mixture, the volume ratio of nitrogen trifluoride and nitrogen in nitrogen trifluoride and nitrogen gas mixture is 2:8; Nitrogen fluoride reacts with pre-loaded boron oxide-11 to obtain crude boron ...

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Abstract

The invention discloses a preparation method of high-purity boron trifluoride-11, belonging to the field of boron isotope compounds. The preparation method comprises the following steps: (i) pretreating reactants; (ii) fluorinating boron oxide-11 to synthesize a boron trifluoride-11 crude product; (iii) carrying out primary separation on the boron trifluoride-11 and impurities; (iv) liquefying and collecting the boron trifluoride-11; (v) purifying the boron trifluoride-11; and (vi) treating tail gas. The enriched boron-11 isotope boron oxide-11 used as the raw material reacts with the fluorinating agent high-purity nitrogen trifluoride to synthesize the boron trifluoride-11; and the obtained product is subjected to adsorption and low-temperature rectification to remove trace impurities, thereby obtaining the enriched boron-11 isotope high-purity boron trifluoride-11 product with the purity of 99.999%. The high-purity boron trifluoride-11 product can satisfy the requirements for the advanced semiconductor device manufacturing procedure, and can enhance the interference resistance and radiation resistance of the integrated circuit.

Description

technical field [0001] The invention belongs to the field of boron isotope compounds, and in particular relates to a preparation method of high-purity boron trifluoride-11. Background technique [0002] As a special boron reagent and fluorinating agent, boron trifluoride is widely used in the manufacture of VLSI semiconductor devices, organic synthesis, elemental boron manufacturing, boron fiber manufacturing and the preparation of other organic boron compounds. The boron element in boron trifluoride generally sold on the market is natural boron, which consists of two stable isotopes 10 B and 11 Composition B, the contents are 19.78% and 80.22% respectively. [0003] 10 B has a strong ability to absorb neutrons, so it is used as a neutron moderator in nuclear reactors to control the operation of the reactor. and 11 B, on the contrary, hardly absorbs neutrons, so it is used as a dopant in the manufacturing process of semiconductor devices, which can effectively improve t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B35/06
Inventor 方治文
Owner 方治文