Metamorphic epitaxial growth method based on nano patterned substrate

Abstract

The invention discloses a metamorphic epitaxial growth method based on a nano patterned substrate. The method includes the following steps: on a substrate or on a virtual substrate on which a specific metamorphic epitaxial layer is deposited, single-layer array of nano-spheres is formed and the sizes of gaps of the nano-spheres are controlled; the gaps of the nano-spheres are connected together so that a nano scale pattern is formed; the nano-spheres are used as a mask to deposit an epitaxial layer material in the gaps of the nano-spheres and the epitaxial layer material is closely combined with the substrate or the virtual substrate so that the deposited thickness of the epitaxial layer material is increased and the epitaxial layer material is enabled to be higher than the nano-spheres. The epitaxial layer material grows laterally and then is combined so as to cover completely the nano-spheres and thus the surface roughness of the epitaxial layer material is reduced. Growth windows of the gaps of the nano-spheres have the characteristics of being narrow in width and high in aspect ratio and the nano-spheres are capable of effectively blocking continued upward penetration of threading dislocation in the epitaxial layer, caused by lattice mismatch between the substrate and the epitaxial layer so that the quality of the metamorphic epitaxial material is improved significantly and a metamorphic epitaxial growth problem among lattice mismatch materials is solved.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic integration, in particular to a method for heterogeneous epitaxial growth based on a nano-pattern substrate. Background technique [0002] With the rapid increase in the demand for network bandwidth and switching speed, huge technical challenges are posed to optical transmission systems and networks that carry information. At present, network terminals and node equipment still mainly rely on discrete optoelectronic devices, which makes the problems of volume, function, power consumption, reliability, cost and other aspects increasingly prominent, and can no longer meet the development requirements of the new generation of optical communication systems and networks. Realizing optoelectronic integration is the only effective way to solve these problems. [0003] After more than 30 years of hard work, optoelectronic integration technology has made considerable progress, but compared with ...

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Problems solved by technology

[0011] In view of the defects of the above-mentioned metamorphic epitaxy method, the technical problem to be solved in the present invention is how to prepare a nano-patterned substrate with a relatively simple process and low cost, and then realize a high degree of crystal lattice mismatch between two materials. High-quality heterogeneous epitaxial growth, greatly reducing the threading dislocation density in heterogeneous epitaxy materials, meeting the requirements for the preparation of high-performance optoelectronic integrated devices

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