Preparation method of P-type crystalline silicon double-sided grooved buried contact cell
A crystalline silicon and battery technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as high production costs and restrict application scope, and achieve the effects of small equipment investment, increased light-receiving area, and improved utilization rate
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[0026] Example 1
[0027] Choose a P-type silicon wafer with a resistivity of 0.3 ?? cm, the pulse energy of the laser is 0.05uJ, the frequency is 50KHz, and the ns laser is used to groove both sides of the substrate according to the electrode pattern. The groove width is 5um and the depth is 10um, the slot spacing is 0.5mm;
[0028] Use 0.5%% sodium hydroxide solution to chemically etch the surface of P-type crystalline silicon at 75℃ to prepare triangular light-trapping structure suede, and then combine 10% hydrochloric acid and 8% hydrogen fluoride Clean the suede after mixing acid to remove surface impurities;
[0029] In a diffusion furnace at a temperature of 600℃, POCl is used 3 Perform phosphorus diffusion to make the diffusion surface resistance of P-type crystalline silicon 40 Ohm / sq to form a PN junction;
[0030] In a single-sided etching equipment, after mixing 5% hydrofluoric acid and 50% nitric acid, the back surface and edges of the silicon wafer are etched;
[0031] A...
Example Embodiment
[0033] Example 2
[0034] Choose a P-type silicon wafer with a resistivity of 1 ?? cm, the pulse energy of the laser is 0.1uJ, the frequency is 1000KHz, and the ns laser is used to groove both sides of the substrate according to the electrode pattern. The groove width is 10um and the depth is 20um, the line spacing is 0.7mm;
[0035] A 0.52% sodium hydroxide solution was used to chemically etch the surface of P-type crystalline silicon at 78°C to prepare a triangular light-trapping structure suede. Then, 10.5% hydrochloric acid and 8.2% hydrofluoric acid were added. Clean the suede after mixing to remove surface impurities;
[0036] In a diffusion furnace at a temperature of 650℃, POCl is used 3 Perform phosphorus diffusion to make the diffusion surface resistance of P-type crystalline silicon 50 Ohm / sq to form a PN junction;
[0037] In a single-sided etching equipment, the back surface and edges of the silicon wafer are etched after mixing hydrofluoric acid with a concentration of...
Example Embodiment
[0040] Example 3
[0041] Choose a P-type silicon wafer with a resistivity of 2 ?? cm, the pulse energy of the laser is 0.15uJ, the frequency is 2000KHz, and the ns laser is used to groove both sides of the substrate according to the electrode pattern. The groove width is 20um and the depth is 30um, the line spacing is 0.9mm;
[0042] Use 0.55% sodium hydroxide solution to chemically etch the surface of P-type crystalline silicon at 80℃ to prepare a triangular light-trapping structure suede, and then mix 11.3% hydrochloric acid and 8.5% hydrofluoric acid Clean the suede after mixing to remove surface impurities;
[0043] Phosphorus source is implanted on the groove surface, the ion beam energy is 8keV, and the ion implantation volume is 105cm -2 Anneal in an annealing furnace at a temperature of 820℃, and repair the silicon surface damaged during ion implantation. The annealed P-type crystalline silicon has a square resistance of 65 Ohm / sq, forming a PN junction;
[0044] In a singl...
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