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Preparation method of P-type crystalline silicon double-sided grooved buried contact cell

A crystalline silicon and battery technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as high production costs and restrict application scope, and achieve the effects of small equipment investment, increased light-receiving area, and improved utilization rate

Inactive Publication Date: 2014-08-27
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Under the background of global energy shortage in recent years, renewable energy, especially solar energy, has been widely recognized and developed rapidly as a clean renewable energy. It has one of the leading industries, but the high production cost restricts its application range, and with the sharp reduction of government subsidies, reducing the production cost of cells and improving power generation efficiency has become an urgent issue for manufacturers

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Select a P-type silicon wafer with a resistivity of 0.3??cm. The pulse energy of the laser is 0.05uJ and the frequency is 50KHz. Use an ns laser to make grooves on both sides of the substrate according to the electrode pattern. The groove width is 5um and the depth is 10um, groove spacing is 0.5mm;

[0028] Use a sodium hydroxide solution with a concentration of 0.5% to chemically etch the surface of P-type crystalline silicon at 75°C to prepare a triangular light-trapping textured surface, and then add hydrochloric acid with a concentration of 10% and hydrogen fluoride with a concentration of 8%. After the acid is mixed, the suede is cleaned to remove surface impurities;

[0029] In a diffusion furnace at 600°C, POCl 3 Phosphorus is diffused so that the diffusion surface resistance of P-type crystalline silicon is 40 Ohm / sq, forming a PN junction;

[0030] In the single-side etching equipment, after mixing hydrofluoric acid with a concentration of 5% and nitric acid ...

Embodiment 2

[0034] Select a P-type silicon wafer with a resistivity of 1??cm. The pulse energy of the laser is 0.1uJ and the frequency is 1000KHz. Use an ns laser to make grooves on both sides of the substrate according to the electrode pattern. The groove width is 10um and the depth is 20um, the line spacing is 0.7mm;

[0035] Use 0.52% sodium hydroxide solution to chemically etch the surface of P-type crystalline silicon at 78 ° C to prepare a triangular light-trapping textured surface, and then add hydrochloric acid with a concentration of 10.5% and hydrofluoric acid with a concentration of 8.2%. After mixing, clean the suede to remove surface impurities;

[0036] In a diffusion furnace at 650°C, POCl 3 Phosphorus is diffused so that the diffusion surface resistance of P-type crystalline silicon is 50Ohm / sq, forming a PN junction;

[0037] In the single-side etching equipment, after mixing hydrofluoric acid with a concentration of 6% and nitric acid with a concentration of 52%, etch ...

Embodiment 3

[0041] Select a P-type silicon wafer with a resistivity of 2??cm. The laser pulse energy is 0.15uJ and the frequency is 2000KHz. Use an ns laser to make grooves on both sides of the substrate according to the electrode pattern. The groove width is 20um and the depth is 30um, the line spacing is 0.9mm;

[0042] Use 0.55% sodium hydroxide solution to chemically etch the surface of P-type crystalline silicon at 80°C to prepare a triangular light-trapping textured surface, and then add hydrochloric acid with a concentration of 11.3% and hydrofluoric acid with a concentration of 8.5%. After mixing, clean the suede to remove surface impurities;

[0043] Phosphorus source is implanted on the groove surface, the ion beam energy is 8keV, and the ion implantation volume is 105cm -2, then annealed in an annealing furnace at a temperature of 820°C, and repaired the silicon surface damaged during ion implantation. After annealing, the square resistance of P-type crystalline silicon was 65...

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Abstract

The invention discloses a preparation method of a P-type crystalline silicon double-sided grooved buried contact cell. The preparation method comprises the technological processes of performing laser grooving on the two surfaces of a substrate of a P-type silicon, performing velvet on the two surfaces of the P-type monocrystalline silicon, cleaning the two surfaces of the P-type monocrystalline silicon, performing P diffusion on the front surface of the substrate of the P-type silicon, removing back junctions, side junctions and phosphorosilicate glass, depositing passive films on the two surfaces and preparing electrodes of the cell. Compared with the traditional technology, the preparation method is simplified in step, less in device investment, high in compatibility with a production line, good in volume production prospect and capable of solving the problems of complex and unstable preparation procedures and poor binding force of the electrodes caused by the fact that the electrodes of a traditional grooved buried contact cell are prepared through the electroplating technology. Furthermore, the utilization rate of sunlight and generated energy are increased, and optical and electrical losses of the two surfaces of the P-type crystalline silicon are effectively reduced.

Description

technical field [0001] The invention relates to the field of solar cell manufacturing, in particular to a method for preparing a p-type crystalline silicon double-sided grooved buried gate cell. Background technique [0002] Under the background of global energy shortage in recent years, renewable energy, especially solar energy, has been widely recognized and developed rapidly as a clean renewable energy. It is one of the leading industries, but the high production cost restricts its application range, and with the sharp reduction of government subsidies, reducing the production cost of cells and improving power generation efficiency has become an urgent issue for manufacturers. Grooved buried grid battery has small shading area of ​​metal grid lines, high current collection area, increased battery power generation, double-sided battery can make full use of sunlight, not only incident sunlight on the front but also scattered light on the back, etc., improving The power gen...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/022425H01L31/1804Y02E10/547Y02P70/50
Inventor 孙海平高艳涛邢国强
Owner ALTUSVIA ENERGY TAICANG
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