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Sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery and preparation method thereof

A parallel and epitaxial technology, applied in the field of microelectronics, can solve the problems of large device leakage current, low energy conversion rate, easy introduction of surface defects, etc., and achieve the effect of increasing the working voltage, increasing the energy conversion rate, and improving the energy utilization rate

Inactive Publication Date: 2014-09-24
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The substrate used in this structure is a P-type highly doped substrate, and the existing process of growing an epitaxial layer on the substrate is immature, so it is easy to introduce surface defects, the leakage current of the device is large, and the energy conversion rate is low.

Method used

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  • Sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery and preparation method thereof
  • Sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery and preparation method thereof
  • Sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Embodiment 1, preparation β radiation source is Ni 63 , PIN-type β-irradiated cells with sandwich parallel epitaxial GaN with a β-radiation source layer thickness of 7 μm.

[0042] Step 1: Make the lower PIN knot.

[0043] (1a) Clean the 4H-SiC sample to remove surface contaminants, such as image 3 (a) shown.

[0044] (1a.1) Set the doping concentration to l x10 18 cm -3 Highly doped n-type 4H-SiC substrate sample in NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0045] (1a.2) Use HCl+H to remove the 4H-SiC sample after removing the surface organic residues 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove ionic pollutants.

[0046] (1b) Epitaxial growth of N-type low-doped SiC epitaxial layer, such as image 3 (b) shown.

[0047] A nitrogen-doped N-type doped epitaxial layer is epitaxially grown on the cleaned SiC sample ...

Embodiment 2

[0061] Embodiment 2, preparation β radiation source is Ni 63 , PIN-type β-irradiated cells with sandwich parallel epitaxial GaN with a thickness of β-radiation source layer of 5 μm.

[0062] Step 1: Make the lower PIN knot.

[0063] 1a) Clean the 4H-SiC sample to remove surface contaminants such as image 3 (a).

[0064] This step is the same as step (1a) of Example 1.

[0065] 1b) Epitaxial growth of N-type low-doped SiC epitaxial layer, such as image 3 (b).

[0066] A nitrogen-doped N-type doped epitaxial layer is epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are: epitaxy temperature is 1570°C, pressure is 100mbar, reaction gas is silane and propane, carrier gas is pure hydrogen, magazine source is liquid nitrogen, and the concentration of nitrogen doping is 1.5x10 15 cm -3 , growth of an N-type low-doped SiC epitaxial layer with a thickness of 22 μm.

[0067] 1c) Epitaxial growth of P-type highly doped GaN epit...

Embodiment 3

[0077] Embodiment 3, preparation β radiation source is Pm 147 , PIN-type β-irradiated cells with sandwich parallel epitaxial GaN with a thickness of β-radiation source layer of 3.5 μm.

[0078] Step A: Make the upper PIN knot.

[0079] (A1) Clean the 4H-SiC sample to remove surface contaminants, such as image 3 (a).

[0080] This step is the same as step (1a) of Example 1.

[0081] (A2) A nitrogen-doped N-type low-doped SiC epitaxial layer is epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the magazine source is liquid nitrogen. A nitrogen doping concentration of 2x10 15 cm -3 , a N-type low-doped SiC epitaxial layer with a thickness of 30 μm such as image 3 (b).

[0082] (A3) Put the sample after growing the N-type low-doped SiC epitaxial layer into the chemical ...

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Abstract

The invention discloses a sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery and a preparation method thereof. At present, a nuclear battery has problems of low energy transformation ratio and low output power, and the invention is mainly used to solve the problems. The sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery of the invention comprises an upper PIN junction and a lower PIN junction which are connected in parallel and a beta radiation source layer. The lower PIN junction comprised a P-type ohmic contact electrode, a P-type highly-doped GaN epitaxial layer, an N-type highly-doped 4H-SiC substrate, an N-type lightly-doped SiC epitaxial layer and an N-type ohmic contact electrode from top to bottom successively. The structure distribution of the upper PIN junction from down to up is the same as the structure distribution of the lower PIN junction from top to bottom. The beta radiation source layer is sandwiched between the P-type ohmic contact electrodes of the upper PIN junction and the lower PIN junction so as to realize the full utilization of high-energy beta particles. According to the invention, advantages of large radiation source and semiconductor contact area, high nuclear raw material utilization rate and energy collection rate and large battery output voltage can be realized, and the battery can be used to supply power to a small circuit in a lasting manner or supply power in occasions, such as polar regions, desert, etc.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a structure and a preparation method of a semiconductor device, in particular to a silicon carbide-based sandwich parallel epitaxial GaN PIN type beta irradiation battery and a preparation method thereof, which can be used for micro-nano-electromechanical systems and other tiny circuits And aerospace, deep sea, polar regions and other occasions that require long-term power supply and are unattended. technical background [0002] With people's demand for low power consumption, long life, high reliability and small size power supply equipment, as well as concerns about nuclear waste disposal, micronuclear batteries have become more and more concerned. Due to its outstanding characteristics, micronuclear batteries can be used to solve the long-term power supply problems of micropipe robots, implanted microsystems, wireless sensor node networks, artificial cardiac pacemakers, and portab...

Claims

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Application Information

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IPC IPC(8): G21H1/06
Inventor 郭辉黄海栗宋庆文王悦湖张玉明
Owner XIDIAN UNIV
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