A neodymium-doped inorganic electroluminescent infrared light-emitting device and its preparation method
A technology of infrared light-emitting and light-emitting devices, applied in the field of optoelectronics, can solve the problems of low energy consumption and high light-emitting efficiency, and achieve the effects of low material cost, convenient manufacturing and simple structure
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Embodiment 1
[0052] A method for preparing an electroluminescent device of neodymium-doped titanium oxide, comprising the following steps:
[0053] (1) The resistivity is about 0.001 Ω cm, and the size is 15×15 mm 2 , P-type silicon wafer with a thickness of 300 μm, after cleaning, place the silicon wafer in the radio frequency sputtering chamber, and use a vacuum pump to pump the pressure in the chamber to 4×10 −3 After Pa, pass pure Ar gas to 1 Pa, use TiO 2 Co-sputtering of ceramic target and metal Nd target to deposit Nd-doped TiO 2 For the initial film, the applied power was about 120W and 25W respectively; the temperature of the P-type silicon substrate was kept at 100°C during the deposition process, and the deposition time was 1 hour.
[0054] (2) The obtained Nd-doped TiO 2 The initial film was heat-treated at 550°C for 2.5 hours in an atmosphere of high-purity oxygen (purity greater than 99.9%), and finally formed Nd-doped TiO 2 Thin film, the thickness of the film is abou...
Embodiment 2
[0059] A method for preparing an electroluminescent device based on neodymium-doped titanium oxide, comprising the following steps:
[0060] (1) The resistivity is about 0.1 Ω cm, and the size is 15×15 mm 2 , P-type silicon wafer with a thickness of 500 μm, after cleaning, place the silicon wafer in a thermal evaporation chamber, and use a vacuum pump to pump the pressure in the chamber to 1×10 −3 After Pa, use Nd doped with atomic ratio 1% 2 o 3 TiO 2 material as an evaporation source to deposit Nd-doped TiO 2 Initial film; P-type silicon substrate maintained at 100°C during deposition.
[0061] (2) The obtained Nd-doped TiO 2 The initial film was heat-treated at 450 °C for 2.5 hours in an oxygen (purity greater than 90%) atmosphere, and finally formed Nd-doped TiO 2 Thin film, the thickness of the film is about 100 nm, and the doping amount of Nd is 1.0% of the atomic ratio.
[0062] (3) In Nd-doped TiO 2 A transparent ITO thin film electrode with a thickness of a...
Embodiment 3
[0066] A method for preparing an electroluminescent device based on neodymium-doped tin oxide, comprising the following steps:
[0067] (1) The resistivity is about 0.003 Ω cm, and the size is 15×15 mm 2 , P-type silicon wafer with a thickness of 2000 μm, after cleaning, place the silicon wafer in the laser pulse deposition chamber, and use a vacuum pump to pump the pressure in the chamber to 2×10 −3 After Pa, use Nd doped with an atomic ratio of 2% 2 o 3 SnO 2 target to deposit Nd-doped SnO 2 Initial film; the temperature of the P-type silicon substrate was kept at 100°C during the deposition process, and the deposition time was 5 hours.
[0068] (2) The obtained Nd-doped SnO 2 The initial film was heat-treated at 500 °C for 1 hour under an oxygen atmosphere, and finally formed Nd-doped SnO 2 Thin film, the thickness of the film is about 200 nm, and the doping amount of Nd is 2.0% of the atomic ratio.
[0069] (3) In Nd-doped SnO 2 A transparent AZO thin film elect...
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