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Graphical method for graphene thin film, functional device and application of graphene thin film

A technology of graphene film and functional devices, which is applied in the manufacture of semiconductor/solid-state devices, instruments, electrical components, etc. It can solve the problems of non-positioning voids, inability to realize arbitrary cutting of graphene, and deterioration of film performance, so as to prevent non-positioning Defects, avoiding the problem of rough edges of graphics, and the effect of convenient application

Inactive Publication Date: 2014-11-26
BTR NEW MATERIAL GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Zhang Guangyu and his collaborators first realized the processing, cutting and patterning of graphene through the secondary plasma etching technology according to the matching of the six-dimensional hole orientation of the etched graphene and the crystal orientation of graphene, but this technology cannot Arbitrary cutting of graphene is realized, and unpositioned void defects are easy to appear in positions that do not need to be cut, resulting in poor film performance

Method used

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  • Graphical method for graphene thin film, functional device and application of graphene thin film
  • Graphical method for graphene thin film, functional device and application of graphene thin film
  • Graphical method for graphene thin film, functional device and application of graphene thin film

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Embodiment 1

[0026] This embodiment is used for the patterning of graphene film to obtain nanoribbons, proceed as follows:

[0027] a. Spray a layer of epoxy resin with a thickness of 10 μm on the surface of the single-layer graphene sample prepared on the copper foil by electrostatic spraying, and remove the solvent in a low-temperature oven at 30°C to obtain Cu / GN / ring Oxygen resin sample A1;

[0028] b. The sample A1 is exposed on an exposure machine using two nanobelts with a width of 100 μm in the light-transmitting area of ​​the film, and the exposed sample B1 is obtained;

[0029] c. Soak sample B1 in a sodium carbonate solution with a temperature of 25°C and a concentration of 1% for 30 minutes, remove the epoxy resin in the unexposed area, and then clean it with deionized water to obtain sample C1;

[0030] d. Place sample C1 in an oxygen plasma atmosphere, control the temperature at 60°C, and etch for 3 minutes to etch away the graphene in the area not protected by epoxy resin t...

Embodiment 2

[0033] This embodiment is used for the patterning of graphene thin film to obtain flower pattern, proceed as follows:

[0034] a. Spray-print a layer of epoxy resin with a thickness of 8 μm on the surface of the single-layer graphene sample that has been prepared on the copper foil, and remove the solvent in a low-temperature oven at 30°C to obtain Cu / GN / epoxy resin sample A2;

[0035] b. Use the masked area of ​​sample A2 as figure 2 Cover the negative film in the blank area shown, and then place it on the exposure machine for exposure to obtain the exposed sample B2;

[0036] c. Soak sample B2 in a sodium carbonate solution with a temperature of 28°C and a concentration of 1.2% for 30 minutes, remove the epoxy resin in the unexposed area, and then clean it with deionized water to obtain sample C2;

[0037] d. Place sample C2 in an oxygen plasma atmosphere, control the temperature at 70°C, and etch for 8 minutes to etch away the graphene in the area not protected by epox...

Embodiment 3

[0040] The present embodiment is used for the patterning of graphene thin film and obtains triangular pattern and carries out as follows:

[0041] a. Print a layer of epoxy resin with a thickness of 5 μm on the surface of the single-layer graphene sample prepared on the copper foil by screen printing, and remove the solvent in a low-temperature oven at 30°C to obtain Cu / GN / epoxy resin sample A3;

[0042] b. Expose sample A3 using a triangle with a side length of 200 μm in the light-transmitting area of ​​the film, and place it on an exposure machine for exposure to obtain exposed sample B3;

[0043] c. Soak sample B3 in a sodium carbonate solution with a temperature of 30°C and a concentration of 0.8% for 25 minutes, remove the epoxy resin in the unexposed area, and then clean it with deionized water to obtain sample C3;

[0044] d. Place sample C3 in an oxygen plasma atmosphere, control the temperature at 55°C, and etch for 6 minutes to etch away the graphene in the area n...

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Abstract

The invention discloses a graphical method for a graphene thin film, a functional device and application of the graphene thin film. The graphical method comprises the following steps: coating the surface of the graphene thin film with photosensitive resin to form a protective layer; then, carrying out regional exposure on the protective layer according to a shape to be graphed; removing the part, corresponding to an unexposed region left after regional exposure, of the protective layer with a developing solution; enabling exposed graphene to form a part to be etched; and putting the part to be etched into a plasma atmosphere for plasma etching. The part to be etched of graphene is obtained through the regional exposure on the coating photosensitive resin and is subjected to plasma etching, directional cutting of graphene can be carried out, the graphical precision is relatively high, the rough edge of a graph is avoided, and non-localization caused by single plasma etching is prevented. In addition, the graphical protective layer of graphene formed after plasma etching is soaked in alkali liquor and then is transferred onto a substrate, so that graphical graphene can be conveniently applied to the functional device.

Description

technical field [0001] The invention relates to the technical field of nano-semiconductor materials, in particular to a patterning method of a graphene film, a functional device and an application thereof. Background technique [0002] Graphene was first discovered by British scientists Andre Geim and Konstantin Novoselov in 2004. It is a two-dimensional structure of hexagonal dot matrix honeycomb composed of SP2 hybridized carbon atoms, which has a high carrier mobility. The characteristic electron mobility can reach 200000cm2 / Vs, and it exhibits the quantum Hall effect at room temperature. In recent years, large-area graphene films have been successfully prepared by chemical vapor deposition based on Ni and Cu foils as carriers, which provides a good foundation for the large-scale application of graphene films. The effective patterning of graphene films directly affects its practical application, so there is a high demand for its effective patterning. [0003] At present...

Claims

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Application Information

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IPC IPC(8): G03F7/00G03F7/20H01L21/02
Inventor 王东卫梅佳吕雪黄友元孔东亮
Owner BTR NEW MATERIAL GRP CO LTD
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